초록 ▼

An undoped Al.sub.0.22 Ga.sub.0.78 As spacer layer having a large forbidden bandgap and an N-Al.sub.0.22 Ga.sub.0.78 As electron-supplying layer having a large forbidden bandgap are formed in order on an undoped GaAs buffer layer having a small forbidden bandgap, and InAs quantum boxes are provided

An undoped Al.sub.0.22 Ga.sub.0.78 As spacer layer having a large forbidden bandgap and an N-Al.sub.0.22 Ga.sub.0.78 As electron-supplying layer having a large forbidden bandgap are formed in order on an undoped GaAs buffer layer having a small forbidden bandgap, and InAs quantum boxes are provided in the Al.sub.0.22 Ga.sub.0.78 As spacer layer. The size of the InAs quantum box is about 150 .ANG. and the height is about 40 .ANG.. When a predetermined drain voltage is applied, electrons are accumulated in the InAs quantum boxes from a channel formed in the vicinity of the interface with the Al.sub.0.22 Ga.sub.0.78 As spacer layer in the GaAs buffer layer. Accordingly, a drain current will not flow almost at all even if a drain voltage is applied.

대표청구항 ▼

[ We claim:] [1.] A semiconductor device, comprising:a channel region in which electrons drift; anda quantum box provided in a position separated from said channel region, with a potential barrier interposed therebetween, for accumulating an electron, there being no potential barrier in said channel

[ We claim:] [1.] A semiconductor device, comprising:a channel region in which electrons drift; anda quantum box provided in a position separated from said channel region, with a potential barrier interposed therebetween, for accumulating an electron, there being no potential barrier in said channel region resulting from said quantum box.