초록

A wavelength-domain-multiplication memory comprises a first semiconductor layer including a first conductivity type impurity, a carrier barrier semiconductor layer formed on the first semiconductor layer, and quantum dots formed in the carrier barrier semiconductor layer.

대표청구항 ▼

[ What is claimed is:] [1.] An optical memory device comprising:(a) semiconductor device including(1) a first layer made of a first semiconductor including first conductive type impurities,(2) a carrier barrier semiconductor layer formed on said first layer, said carrier barrier semiconductor layer

[ What is claimed is:] [1.] An optical memory device comprising:(a) semiconductor device including(1) a first layer made of a first semiconductor including first conductive type impurities,(2) a carrier barrier semiconductor layer formed on said first layer, said carrier barrier semiconductor layer which is undoped,(3) quantum dots formed in said carrier barrier semiconductor layer, and(4) a second layer formed on said carrier barrier semiconductor layer, said second layer being made of a second semiconductor including second conductive type impurities or a Schottky barrier metal; said optical memory device further comprising(b) backward bias voltage providing means which provide backward bias voltage between said first layer and said second layer;(c) writing means for irradiating a light to said quantum dots; and(d) reading means which distinguish "1" or "0" by measuring a quantity of light transmitted from said quantum dots in a reading operation or by measuring a quantity of current between said first layer and second layer in the reading operation.