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High selectivity oxide to nitride slurry 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B24B-001/04
출원번호 US-0034514 (1998-03-04)
발명자 / 주소
  • Morrison William R.
  • Hunt Kyle P.
출원인 / 주소
  • Texas Instruments Incorporated
대리인 / 주소
    Garner
인용정보 피인용 횟수 : 27  인용 특허 : 2

초록

An improved slurry for polish removal. One application of this slurry is for shallow trench isolation processing in semiconductor manufacturing. The improved slurry has an enhanced oxide to nitride polish removal selectivity. A modified slurry is formed by mixing a polishing slurry with tetramethyl

대표청구항

[ What is claimed is:] [1.] A method of enhancing the polish removal selectivity in a semiconductor process, comprising polishing a semiconductor device with a modified slurry, said modified slurry formed by the process of combining a slurry with salt of tetramethyl ammonium, a base, and hydrogen pe

이 특허에 인용된 특허 (2)

  1. Muroyama Masakazu,JPX, Method of polishing a semiconductor substrate during production of a semiconductor device.
  2. Loncki Scott B. ; Cook Lee Melbourne ; Shen James ; Pierce Keith G., Polishing silicon wafers with improved polishing slurries.

이 특허를 인용한 특허 (27)

  1. Kim, Nam-Soo; Chon, Sang-Mun; Lim, Young-Sam; Kang, Kyoung-Moon; Lee, Sei-Cheol; So, Jae-Hyun; Lee, Dong-Jun, Additive composition, slurry composition including the same, and method of polishing an object using the slurry composition.
  2. Kim,Nam Soo; Chon,Sang Mun; Lim,Young Sam; Kang,Kyoung Moon; Lee,Sei Cheol; So,Jae Hyun; Lee,Dong Jun, Additive composition, slurry composition including the same, and method of polishing an object using the slurry composition.
  3. Carter, Phillip; Bogush, Gregory H.; De Rege, Francesco M.; Chamberlain, Jeffrey P.; Schroeder, David J.; Mueller, Brian L., Alkali metal-containing polishing system and method.
  4. Judson R. Sharples ; Kenneth F. Zacharias ; Guy F. Hudson, Apparatus for controlling PH during planarization and cleaning of microelectronic substrates.
  5. Chang, Josephine B.; Charns, Leslie; Cummings, Jason E.; Guillorn, Michael A.; Hupka, Lukasz J.; Koli, Dinesh R.; Konno, Tomohisa; Krishnan, Mahadevaiyer; Lofaro, Michael F.; Nalaskowski, Jakub W.; Noda, Masahiro; Penigalapati, Dinesh K.; Yamanaka, Tatsuya, Chemical mechanical planarization processes for fabrication of FinFET devices.
  6. Charns, Leslie; Cotte, John M.; Cummings, Jason E.; Hupka, Lukasz J.; Koli, Dinesh R.; Konno, Tomohisa; Krishnan, Mahadevaiyer; Lofaro, Michael F.; Nalaskowski, Jakub W.; Noda, Masahiro; Penigalapati, Dinesh K.; Yamanaka, Tatsuya, Chemical mechanical planarization with overburden mask.
  7. Jin, Raymond R.; Li, Shijian; Redeker, Fred C.; Osterheld, Thomas H., Chemical mechanical polishing a substrate having a filler layer and a stop layer.
  8. Jin,Raymond R.; Li,Shijian; Redeker,Fred C.; Osterheld,Thomas H., Chemical mechanical polishing a substrate having a filler layer and a stop layer.
  9. Choung, Jae Hoon; Lee, In Kyung, Chemical mechanical polishing slurry compositions, methods of preparing the same and methods of using the same.
  10. Choung, Jae Hoon; Lee, In Kyung; Choi, Won Young; Lee, Tae Young; Yang, Ji Chul, Chemical mechanical polishing slurry compositions, methods of preparing the same and methods of using the same.
  11. Chelle, Philippe H.; Small, Robert J., Compositions and methods for rapidly removing overfilled substrates.
  12. Chelle,Philippe H.; Small,Robert J., Compositions and methods for rapidly removing overfilled substrates.
  13. Ashutosh Misra ; Joe G. Hoffman ; Anthony J. Schleisman, Compositions for use in a chemical-mechanical planarization process.
  14. Ando, Takashi; Charns, Leslie; Cummings, Jason E.; Hupka, Lukasz J.; Koli, Dinesh R.; Konno, Tomohisa; Krishnan, Mahadevaiyer; Lofaro, Michael F.; Nalaskowski, Jakub W.; Noda, Masahiro; Penigalapati, Dinesh K.; Yamanaka, Tatsuya, Fabrication of replacement metal gate devices.
  15. Singh, Rajiv K., High selectivity and high planarity dielectric polishing.
  16. Kyle P. Hunt ; William R. Morrison, Method for chemical mechanical polishing using a high selective slurry.
  17. Sharples Judson R. ; Zacharias Kenneth F. ; Hudson Guy F., Method for controlling pH during planarization and cleaning of microelectronic substrates.
  18. Sharples, Judson R.; Zacharias, Kenneth F.; Hudson, Guy F., Method for controlling pH during planarization and cleaning of microelectronic substrates.
  19. Sharples, Judson R.; Zacharias, Kenneth F.; Hudson, Guy F., Method for controlling pH during planarization and cleaning of microelectronic substrates.
  20. Steven C. Avanzino ; Stephen Keetai Park ; Kashmir S. Sahota ; David H. Matsumoto ; Mark Ramsbey, Method for removing semiconductor ARC using ARC CMP buffing.
  21. Lee,Woo Jin, Method of forming a platinum pattern.
  22. Chen-Hua Yu TW; Weng Chang TW; Jih-Chung Twu TW; Tsu Shih TW, Method to eliminate dishing of copper interconnects by the use of a sacrificial oxide layer.
  23. Small,Robert J.; Frey,Donald William; Tredinnick,Bruce; Hayden,Christopher G., Particulate or particle-bound chelating agents.
  24. Bogush, Gregory H.; Chamberlain, Jeffrey P.; Feeney, Paul M.; Mueller, Brian L.; Schroeder, David J.; Walters, Alicia F., Preequilibrium polishing method and system.
  25. Charns, Leslie; Cummings, Jason E.; Hupka, Lukasz J.; Koli, Dinesh R.; Konno, Tomohisa; Krishnan, Mahadevaiyer; Lofaro, Michael F.; Nalaskowski, Jakub W.; Noda, Masahiro; Penigalapati, Dinesh K.; Yamanaka, Tatsuya, Shallow trench isolation chemical mechanical planarization.
  26. Mueller,Brian L.; Chamberlain,Jeffery P.; Schroeder,David J., System for the preferential removal of silicon oxide.
  27. Mueller,Brian L.; Chamberlain,Jeffery P.; Schroeder,David J., System for the preferential removal of silicon oxide.
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