$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Nitride compacts 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C04B-035/58
출원번호 US-0997845 (1997-12-24)
발명자 / 주소
  • Preston Kenneth G.
대리인 / 주소
    Pittas / KoenigKoenig
인용정보 피인용 횟수 : 17  인용 특허 : 12

초록

A hot press method for the fabrication of doped or undoped gallium nitride compacts, and of other nitride compacts, employs as a starting material a powder mixture of the selected nitride and of a nitrogen rich salt. A preferred method for fabricating gallium nitride compacts employs ammonium carbon

대표청구항

[ I claim:] [1.] A substantially pure gallium nitride compact having a density in excess of 75% of maximum theoretical density.

이 특허에 인용된 특허 (12)

  1. Schwetz Karl-Alexander (Sulzberg DEX) Grellner Wolfgang (Kempten DEX) Hunold Klaus (Lauben DEX) Mohr Max (Kempten DEX) Lipp Alfred (Bad Worishofen DEX), Dense molded bodies of polycrystalline aluminum nitride and process for preparation without use of sintering aids.
  2. Kume Shoichi (Aichi JPX) Yoshida Haruo (Ibaraki JPX) Yamada Yukiyoshi (Saitama JPX) Fuyuki Tadashi (Saitama JPX) Akiyama Satoshi (Saitama JPX) Hamada Yoshiaki (Saitma JPX) Kuroda Eisuke (Saitama JPX), Diamond sinter, high-pressure phase boron nitride sinter, and processes for producing those sinters.
  3. Hoenig Clarence L. (Livermore CA), High density hexagonal boron nitride prepared by hot isostatic pressing in refractory metal containers.
  4. Carter ; Jr. Calvin H. (Raleigh NC), High efficiency light emitting diodes from bipolar gallium nitride.
  5. Moustakas Theodore D. (Dover MA) Molnar Richard J. (Medford MA), Method for epitaxially growing gallium nitride layers.
  6. Dunlop John A. (Veradale WA) Rensing Hans (Rossland CAX), Method for making tungsten-titanium sputtering targets and product.
  7. Tompa Gary Steven (Somerville NJ), Method for producing carbon nitride films.
  8. Nakamura Shuji (Anan JPX), Method of vapor-growing semiconductor crystal and apparatus for vapor-growing the same.
  9. Rubin Michael (Berkeley CA) Newman Nathan (Montara CA) Fu Tracy (Berkeley CA) Ross Jennifer (Pleasanton CA) Chan James (Berkeley CA), P-type gallium nitride.
  10. Mallia Robert A. (Tucson AZ) Cox Carl V. (Tucson AZ), Process for the production of sintered aluminum nitrides.
  11. Takeda Yukio (Hitachi JPX) Ogihara Satoru (Hitachi JPX) Ura Mitsuru (Hitachi JPX) Nakamura Kousuke (Hitachi JPX) Asai Tadamichi (Ibaraki JPX) Ohkoshi Tokio (Hitachi JPX) Matsushita Yasuo (Hitachi JPX, Sintered aluminum nitride semi-conductor device.
  12. Schlott Martin (Hanau DEX) Kutzner Martin (Neuberg DEX) Weigert Martin (Hanau DEX) Konietzka Uwe (Geiselbach CA DEX) Gehman Bruce (Morgan Hill CA) Vahlstrom Shawn (Morgan Hill CA), Sputter target for cathodic atomization to produce transparent, conductive layers.

이 특허를 인용한 특허 (17)

  1. D'Evelyn, Mark Philip; Giddings, Robert Arthur; Sharifi, Fred; Dey, Subhrajit; Hong, Huicong; Kapp, Joseph Alexander; Khare, Ashok Kumar, Apparatus for processing materials in supercritical fluids and methods thereof.
  2. D'Evelyn,Mark Philip; Park,Dong Sil; Lou,Victor Lienkong; McNulty,Thomas Francis; Hong,Huicong, Apparatus for producing single crystal and quasi-single crystal, and associated method.
  3. Sankar,Sambasivan; Goyal,Amit; Barnett,Scott A.; Kim,Ilwon; Kroeger,Donald M., Conductive and robust nitride buffer layers on biaxially textured substrates.
  4. Mesuda, Masami; Matsumaru, Keitaro; Takahashi, Koyata; Kikuchi, Ryou; Shibutami, Tetsuo, Gallium nitride sintered body or gallium nitride molded article, and method for producing same.
  5. Hashimoto, Tadao; Letts, Edward, Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride.
  6. Hashimoto, Tadao; Letts, Edward, Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride.
  7. D'Evelyn,Mark Philip; Webb,Steven William; Vagarali,Suresh Shankarappa; Kadioglu,Yavuz; Park,Dong Sil; Chen,Zheng, High pressure high temperature growth of crystalline group III metal nitrides.
  8. D'Evelyn, Mark Philip; Narang, Kristi Jean; Giddings, Robert Arthur; Tysoe, Steven Alfred; Lucek, John William; Vagarali, Suresh Shankarappa; Leonelli, Jr., Robert Vincent; Dysart, Joel Rice, High temperature high pressure capsule for processing materials in supercritical fluids.
  9. Hashimoto, Tadao; Letts, Edward; Ikari, Masanori, High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal.
  10. Hashimoto, Tadao; Letts, Edward; Ikari, Masanori, High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal.
  11. Hashimoto, Tadao; Letts, Edward; Ikari, Masanori, Method for producing group III-nitride wafers and group III-nitride wafers.
  12. Hashimoto, Tadao; Ikari, Masanori; Letts, Edward, Method for testing group III-nitride wafers and group III-nitride wafers with test data.
  13. Hashimoto, Tadao; Ikari, Masanori; Letts, Edward, Method for testing group III-nitride wafers and group III-nitride wafers with test data.
  14. Hashimoto, Tadao; Ikari, Masanori; Letts, Edward, Method for testing group III-nitride wafers and group III-nitride wafers with test data.
  15. Letts, Edward; Hashimoto, Tadao; Ikari, Masanori, Methods for producing GaN nutrient for ammonothermal growth.
  16. Letts, Edward; Hashimoto, Tadao; Ikari, Masanori, Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth.
  17. Letts, Edward; Hashimoto, Tadao; Ikari, Masanori, Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로