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Vacuum processing apparatus 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/00
출원번호 US-0803008 (1997-02-21)
우선권정보 JP-0036425 (1994-02-08)
발명자 / 주소
  • Matsuse Kimihiro,JPX
  • Lee Hideki,JPX
  • Osada Hatsuo,JPX
  • Tanaka Sumi,JPX
출원인 / 주소
  • Tokyo Electron Limited, JPX
대리인 / 주소
    Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
인용정보 피인용 횟수 : 42  인용 특허 : 6

초록

A vacuum processing apparatus includes: a vacuum processing chamber for processing a target object; a processing gas supply source for supplying a processing gas by which a process is performed to the target object in the vacuum processing chamber; a processing gas supply pipe for supplying the proc

대표청구항

[ What is claimed is:] [1.] A vacuum processing apparatus comprising:a vacuum processing chamber housing a target object for applying a predetermined treatment to the target object;a mounting table, arranged within said vacuum processing chamber, for mounting a target object;a processing gas supply

이 특허에 인용된 특허 (6)

  1. Hirooka Masaaki (Toride JPX) Ishihara Shunichi (Ebina JPX) Hanna Junichi (Yokohama JPX) Shimizu Isamu (Yokohama JPX), Apparatus for continuously preparing a light receiving element for use in photoelectromotive force member or image-readi.
  2. Hayakawa Yukihiro (Atsugi JPX) Kawasumi Yasushi (Fujisawa JPX) Makino Kenji (Yokohama JPX) Kataoka Yuzo (Atsugi JPX), Chemical vapor deposition method.
  3. Thomas Michael E. (Milpitas CA) van de Van Everhardus P. (Cupertino CA) Broadbent Eliot K. (San Jose CA), Gas-based backside protection during substrate processing.
  4. Hey H. Peter W. (Phoenix AZ) Mazak William A. (Mesa AZ) Aggarwal Ravinder K. (Mesa AZ) Curtin John H. (Phoenix AZ), High throughput multi station processor for multiple single wafers.
  5. Zijlstra Piebe A. (Nijmegen NLX), Method of manufacturing a semiconductor device using a chemical vapour deposition process with plasma cleaning of the re.
  6. Ono Tetsuo (Kokubunji JPX) Hiraoka Susumu (Kokubunji JPX) Saito Sakae (Tokorozawa JPX) Harada Kunio (Hachioji JPX) Tachibana Mituhiro (Fuchu JPX) Kubota Shigeo (Saitama JPX) Suzuki Keizo (Kodaira JPX, Surface treating apparatus, surface treating method and semiconductor device manufacturing method.

이 특허를 인용한 특허 (42)

  1. Kim, In-Gi; Hwang, In-Seak; Chung, Dae-Hyuk; Kim, Kyoung-Hwan, Apparatus and method for removing a photoresist structure from a substrate.
  2. Lee, Eric M.; Faguet, Jacques; Strang, Eric J., Apparatus for chemical vapor deposition control.
  3. Strauch, Gerhard Karl, CVD method and CVD reactor.
  4. Kim, Changsung Sean; Choi, Chang Hwan; Hong, Jong Pa; Kim, Joong El, Chemical vapor deposition apparatus.
  5. Kim, Changsung Sean; Yoo, Sang Duk; Hong, Jong Pa; Shim, Ji Hye; Lee, Won Shin, Chemical vapor deposition apparatus.
  6. Baik-soon Choi KR; Jung-il An KR; Jin-sung Kim KR; Jung-ki Kim KR, Chemical vapor deposition apparatus for manufacturing semiconductor devices, its driving method, and method of optimizing recipe of cleaning process for process chamber.
  7. Sugiyama, Kazuhiko; Ikeda, Nobukazu; Nishino, Kouji; Dohi, Ryousuke; Uenoyama, Toyomi, Device and method for supplying gas while dividing to chamber from gas supplying facility equipped with flow controller.
  8. Sugiyama, Kazuhiko; Ikeda, Nobukazu; Nishino, Kouji; Dohi, Ryousuke; Uenoyama, Toyomi, Device and method for supplying gas while dividing to chamber from gas supplying facility equipped with flow controller.
  9. Kakegawa, Takashi, Film forming apparatus and method, gas supply device and storage medium.
  10. McMillin, Brian K.; Knop, Robert, Gas distribution apparatus for semiconductor processing.
  11. Nasman, Ronald; Biel, Patrick J.; Faguet, Jacques, Gas heating device for a vapor deposition system.
  12. Yamaguchi, Yuji; Yasuda, Tadahiro, Gas supply system.
  13. Shareef, Iqbal; Taskar, Mark; Zemlock, Tony, Gas transport delay resolution for short etch recipes.
  14. Yamagishi, Takayuki; Suwada, Masaei, Gas-line system for semiconductor-manufacturing apparatus.
  15. Nasman, Ronald; Faguet, Jacques, High temperature gas heating device for a vapor deposition system.
  16. Strang, Eric J., Method and apparatus for gas injection system with minimum particulate contamination.
  17. Lull, John M.; Valentine, William S., Method and apparatus for providing a determined ratio of process fluids.
  18. Lull, John M.; Valentine, William S., Method and apparatus for providing a determined ratio of process fluids.
  19. Lull,John M.; Valentine,William S., Method and apparatus for providing a determined ratio of process fluids.
  20. Lull,John M.; Valentine,William S., Method and apparatus for providing a determined ratio of process fluids.
  21. Lull,John M; Valentine,William S, Method and apparatus for providing a determined ratio of process fluids.
  22. Brcka, Jozef; Jones, Bill; Leusink, Gert; Long, Jeffrey J.; Oliver, Bill; Tweed, Charles, Method for characterizing the performance of an electrostatic chuck.
  23. Lee, Eric M.; Faguet, Jacques; Strang, Eric J., Method for chemical vapor deposition control.
  24. Kuo-Liang Lu TW; Yung-Chih Yao TW, Method for preventing contamination in a plasma process chamber.
  25. Onodera, Naomi; Gokon, Kiyohiko; Sato, Jun, Plasma process apparatus and plasma process method.
  26. Onodera, Naomi; Gokon, Kiyohiko; Sato, Jun, Plasma process method.
  27. Iwai, Tetsuhiro; Furukawa, Ryota, Plasma processing apparatus and method of processing.
  28. Wanka, Harald; Reichart, Johann Georg; Voelk, Hans-Peter, Plasma reactor with high productivity.
  29. Emoto, Keiji, Processing apparatus for processing object in vessel.
  30. Chen, AiHua, Semiconductor processing system; a semiconductor processing chamber; and a method for loading, unloading and exchanging semiconductor work pieces from a semiconductor processing chamber.
  31. Kim, Changsung Sean; Hong, Jong Pa; Lee, Kyung Ho, Showerhead for chemical vapor deposition and chemical vapor deposition apparatus having the same.
  32. Shim, Kyung Sik, Single wafer LPCVD apparatus.
  33. Shigekazu Kato JP; Kouji Nishihata JP; Tsunehiko Tsubone JP; Atsushi Itou JP, Substrate changing-over mechanism in a vaccum tank.
  34. Shigekazu Kato JP; Kouji Nishihata JP; Tsunehiko Tsubone JP; Atsushi Itou JP, Substrate changing-over mechanism in vacuum tank.
  35. Hayashi, Daisuke; Takanashi, Morihiro, Substrate processing apparatus and gas supply method.
  36. Cho, Cheon-Soo; Youn, Dong-Sik; Lee, Hyun-Wook; Ha, Samchul, Surface treatment system and method.
  37. Katsui, Shuji; Tanaka, Masayuki; Kamimura, Masaki; Akahori, Hiroshi; Mizushima, Ichiro; Nakao, Takashi; Yamamoto, Akihito; Saida, Shigehiko; Tsunashima, Yoshitaka; Mikata, Yuuichi, System for determining dry cleaning timing, method for determining dry cleaning timing, dry cleaning method, and method for manufacturing semiconductor device.
  38. Nishimoto, Shinya, Temperature adjusting mechanism and semiconductor manufacturing apparatus using temperature adjusting mechanism.
  39. Ishida, Arichika, Thin-film forming apparatus and thin-film forming method.
  40. Franklin, Timothy J.; Marohl, Dan A., Transfer chamber with side wall port.
  41. Shigekazu Kato JP; Kouji Nishihata JP; Tsunehiko Tsubone JP; Atsushi Itou JP, Vacuum processing apparatus and operating method therefor.
  42. Faguet, Jacques; Lee, Eric M., Vapor deposition system.
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