초록 ▼

A contact space filled with conductive material having good step coverage is disclosed. The contact space is formed in a dielectric layer with an upper surface. The contact space has sidewalls comprised of the dielectric layer and a bottom comprised of an underlying layer. The contact space is fille

A contact space filled with conductive material having good step coverage is disclosed. The contact space is formed in a dielectric layer with an upper surface. The contact space has sidewalls comprised of the dielectric layer and a bottom comprised of an underlying layer. The contact space is filled by first depositing a layer of an amorphous material such as TiAl.sub.3 over the bottom and sidewalls of the contact space, then filling the contact space with a metallic fill material such as an aluminum-containing fill material. The amorphous material is chosen particularly to have low reactivity with the metallic fill material, so that mobility of the metallic fill material over the surface upon which it is deposited is facilitated.

대표청구항 ▼

[ What is claimed and desired to be secured by United States Letters Patent is:] [1.] A method of forming a contact structure comprising:forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls and a bottom, said contact space exposi

[ What is claimed and desired to be secured by United States Letters Patent is:] [1.] A method of forming a contact structure comprising:forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls and a bottom, said contact space exposing a semiconductor material;directionally depositing a layer of an amorphous material over the bottom and sidewalls of the contact space, said amorphous material being selected from the group consisting of a metallics, intermetallics, ceramics, their compounds and combinations thereof; anddepositing a metallic fill material within said contact space.