[특허]SiC single crystal and method for growth thereof

[미국특허] SiC single crystal and method for growth thereof 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	C30B-023/06
출원번호	US-0856248 (1997-05-14)
우선권정보	JP-0056036 (1994-03-25)
발명자 / 주소	Takahashi Jun,JPX Kanaya Masatoshi,JPX Fujiwara Yuichiro,JPX Ohtani Noboru,JPX
출원인 / 주소	Nippon Steel Corporation, JPX
대리인 / 주소	Wenderoth, Lind & Ponack, L.L.P.
인용정보	피인용 횟수 : 29 인용 특허 : 4

초록

A method for the growth of a SiC single crystal comprising

대표청구항 ▼

[ We claim:] [8.] A method for the production of an SiC single crystal which is substantially free from defects corresponding to hexagonal etch pits and dislocations corresponding to shell-like etch pits, and which has a retarded density of pits and void defects caused by thermal etching, and which is substantially free from heterogeneous crystal grains,-which method comprises:a. introducing a seed crystal of SiC single crystal having an exposed face which forms a rotation angle .psi. around the c-axis of +5.degree. to -5.degree. with a plane deviating from {0001} plane by an angle .alpha..sub.1 of about 60.degree. to about 120.degree. in the direction of {1010} plane, and SiC powder as a raw material into a graphite crucible,b. elevating the temperature of said SiC powder in an atmosphere of inert gas to a level sufficient for sublimation, whilec. elevating the temperature of the exposed face of said seed crystal to a level slightly lower than the temperature of said SiC powder, andd. keeping said SiC powder and said seed crystal at the above temperatures for a period sufficient for an SiC single crystal of the same polytype as said seed crystal to grow to a desired height on said exposed face of said seed crystal,e. removing the resultant grown SiC single crystal from said crucible, andf. inserting a cut along a plane into the removed SiC single crystal, said plane passing a terminal part of the width relative to the direction of the c-axis of said seed crystal, intersecting by said angle .alpha..sub.1 said exposed face of said seed crystal and also intersecting perpendicularly the c-axis of said seed crystal, thereby obtaining a part of said grown SiC single crystal falling outside the width in the direction of the c-axis of said seed crystal.

이 특허에 인용된 특허 (4) 인용/피인용 타임라인 분석

Kong Hua-Shuang (Raleigh NC) Glass Jeffrey T. (Apex NC) Davis Robert F. (Raleigh NC), Homoepitaxial growth of Alpha-SiC thin films and semiconductor devices fabricated thereon.
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Kong Hua-Shuang (Raleigh NC) Carter ; Jr. Calvin H. (Cary NC), Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon car.
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Addamiano, Arrigo, Method of preparing single crystalline cubic silicon carbide layers.
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Davis Robert F. (Raleigh NC) Carter ; Jr. Calvin H. (Raleigh NC) Hunter Charles E. (Durham NC), Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide.
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이 특허를 인용한 특허 (29) 인용/피인용 타임라인 분석

Neudeck, Philip G.; Powell, J. Anthony, Lateral movement of screw dislocations during homoepitaxial growth and devices yielded therefrom free of the detrimental effects of screw dislocations.
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Powell, Adrian; Brady, Mark; Mueller, Stephan G.; Tsvetkov, Valeri F.; Leonard, Robert T., Low 1C screw dislocation 3 inch silicon carbide wafer.
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Powell, Adrian; Brady, Mark; Mueller, Stephan G.; Tsvetkov, Valeri F.; Leonard, Robert T., Low 1C screw dislocation 3 inch silicon carbide wafer.
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Powell, Adrian; Brady, Mark; Mueller, Stephan G.; Tsvetkov, Valeri F.; Leonard, Robert T., Low 1C screw dislocation 3 inch silicon carbide wafer.
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Powell,Adrian; Brady,Mark; Mueller,Stephen G.; Tsvetkov,Valeri F.; Leonard,Robert T., Low 1c screw dislocation 3 inch silicon carbide wafer.
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Urakami, Yasushi; Adachi, Ayumu; Gunjishima, Itaru, Manufacturing method of silicon carbide single crystal.
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Tsvetkov,Valeri F.; Malta,David P., Method and apparatus for the production of silicon carbide crystals.
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Yury Alexandrovich Vodakov RU; Mark Grigorievich Ramm ; Evgeny Nikolaevich Mokhov RU; Alexandr Dmitrievich Roenkov RU; Yury Nikolaevich Makarov ; Sergei Yurievich Karpov RU; Mark Spiridonovich , Method for growing low defect density silicon carbide.
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Oyanagi,Naoki, Method for growth of silicon carbide single crystal, silicon carbide seed crystal, and silicon carbide single crystal.
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Danno, Katsunori, Method for producing sic single crystal having low defects by solution process.
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Oyanagi, Naoki; Syounai, Tomohiro; Sakaguchi, Yasuyuki, Method for producing silicon carbide single crystal.
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Kimoto, Tsunenobu; Shiomi, Hiromu; Saitoh, Hiroaki, Method of SiC single crystal growth and SiC single crystal.
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Urakami, Yasushi; Gunjishima, Itaru; Adachi, Ayumu, Method of manufacturing homogeneous silicon carbide single crystal with low potential of generating defects.
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Watanabe, Hiroki; Kitou, Yasuo; Naito, Masami, Method of manufacturing silicon carbide single crystal.
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Okamoto Atsuto,JPX ; Sugiyama Naohiro,JPX ; Tani Toshihiko,JPX ; Kamiya Nobuo,JPX ; Wakayama Hiroaki,JPX ; Fukushima Yoshiaki,JPX ; Hara Kazukuni,JPX ; Hirose Fusao,JPX ; Onda Shoichi,JPX ; Hara Kuni, Method of manufacturing silicon carbide single crystal and silicon carbide single crystal manufactured by the same.
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Wang, Shaoping; Kopec, Aneta; Ware, Rodd Mitchell; Holmes, Sonia, Method of silicon carbide monocrystalline boule growth.
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Mueller, Stephan, Methods of fabricating silicon carbide crystals.
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Mueller,Stephan, Methods of fabricating silicon carbide crystals.
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Mueller,Stephan, Methods of fabricating silicon carbide crystals.
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Colin Alan Warwick, Mitigation of deleterious effects of micropipes in silicon carbide devices.
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Leonard, Robert T.; Brady, Mark; Powell, Adrian, One hundred millimeter SiC crystal grown on off-axis seed.
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Mueller,Stephan; Powell,Adrian; Tsvetkov,Valeri F., Seed and seedholder combinations for high quality growth of large silicon carbide single crystals.
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Mueller,Stephan; Powell,Adrian; Tsvetkov,Valeri F., Seed and seedholder combinations for high quality growth of large silicon carbide single crystals.
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Nakamura, Daisuke; Ito, Tadashi; Kondo, Hiroyuki; Naito, Masami, SiC single crystal, method for manufacturing SiC single crystal, SiC wafer having an epitaxial film, method for manufacturing SiC wafer having an epitaxial film, and SiC electronic device.
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Peters Dethard,DEX ; Schorner Reinhold,DEX ; Stephani Dietrich,DEX, Silicon carbide semiconductor configuration with a high degree of channel mobility.
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Nakayama, Koji; Sugawara, Yoshitaka; Asano, Katsunori; Tsuchida, Hidekazu; Kamata, Isaho; Miyanagi, Toshiyuki; Nakamura, Tomonori, Silicon carbide semiconductor device and manufacturing method therefor.
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Fujibayashi, Hiroaki; Naito, Masami; Ooya, Nobuyuki, Single crystal compound semiconductor substrate.
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Fujibayashi, Hiroaki; Naito, Masami; Ooya, Nobuyuki, Stacked single crystal compound semiconductor substrates.
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Shaheen, Mohamad A.; Rachmady, Willy; Tolchinsky, Peter, Ultra-thin oxide bonding for S1 to S1 dual orientation bonding.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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[미국특허] SiC single crystal and method for growth thereof 원문보기