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Method of modifying an exposed surface of a semiconductor wafer 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/302
출원번호 US-0694014 (1996-08-08)
발명자 / 주소
  • Bruxvoort Wesley J.
  • Culler Scott R.
  • Ho Kwok-Lun
  • Kaisaki David A.
  • Kessel Carl R.
  • Klun Thomas P.
  • Kranz Heather K.
  • Messner Robert P.
  • Webb Richard J.
  • Williams Julia P.
출원인 / 주소
  • Minnesota Mining and Manufacturing Company
대리인 / 주소
    Pastirik
인용정보 피인용 횟수 : 306  인용 특허 : 95

초록

A method of modifying an exposed surface of a semiconductor wafer that includes the steps of:

대표청구항

[ What is claimed is:] [1.] A method of modifying a processed semiconductor wafer containing topographical features comprising the steps of:(a) contacting an exposed surface of the processed semiconductor wafer with a three-dimensional, textured, fixed abrasive article comprising a plurality of abra

이 특허에 인용된 특허 (95)

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  65. Slutz,David E.; Finke,Steven J., CVD diamond-coated composite substrate containing a carbide-forming material and ceramic phases and method for making same.
  66. Grumbine, Steven K., Catalyst/oxidizer-based CMP system for organic polymer films.
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  75. Fang,Mingming; Ianiro,Michael R.; Eisenhour,Don, Chemical-mechanical polishing (CMP) slurry and method of planarizing computer memory disk surfaces.
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  77. Fang,Mingming; Ianiro,Michael R.; Eisenhour,Don, Chemical-mechanical polishing (CMP) slurry containing clay and CeOabrasive particles and method of planarizing surfaces.
  78. De Rege Thesauro,Francesco; Brusic,Vlasta; Bayer,Benjamin P., Chemical-mechanical polishing of metals in an oxidized form.
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  80. Lee, Jong-won; Lee, Jae-dong; Yoon, Bo-un; Hah, Sang-rok, Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same.
  81. Avanzino Steven C. ; Erb Darrell M. ; Schonauer Diana M. ; Yang Kai, Chemically removable Cu CMP slurry abrasive.
  82. Adefris, Negus B.; Joseph, William D.; Wagle-Peterson, Kathleen A., Composite abrasive particles and method of manufacture.
  83. De Rege Thesauro, Francesco; Grumbine, Steven; Carter, Phillip; Li, Shoutian; Zhang, Jian; Schroeder, David; Tsai, Ming-Shih, Compositions and methods for CMP of semiconductor materials.
  84. Hardy, L. Charles; Kranz, Heather K.; Wood, Thomas E.; Kaisaki, David A.; Gagliardi, John J.; Clark, John C.; Savu, Patricia M.; Clark, Philip G., Compositions and methods for modifying a surface suited for semiconductor fabrication.
  85. Chelle, Philippe H.; Small, Robert J., Compositions and methods for rapidly removing overfilled substrates.
  86. Chelle,Philippe H.; Small,Robert J., Compositions and methods for rapidly removing overfilled substrates.
  87. Carter,Phillip W.; Zhang,Jian; Grumbine,Steven K.; De Rege Thesauro,Francesco, Compositions and methods for tantalum CMP.
  88. De Rege Thesauro, Francesco; Grumbine, Steven; Carter, Phillip; Li, Shoutian; Zhang, Jian; Schroeder, David; Tsai, Ming-Shih, Compositions for CMP of semiconductor materials.
  89. Costas, Wesley D.; Shen, James; Mandigo, Glenn C.; Thomas, Terence M.; Lack, Craig D.; Barker, II, Ross E., Compositions for insulator and metal CMP and methods relating thereto.
  90. Vaartstra,Brian A., Compositions for planarization of metal-containing surfaces using halogens and halide salts.
  91. Uchiyama Shinzo,JPX, Conditioning apparatus and conditioning method.
  92. Felipe, Sr., Peter A.; Schutz, James W.; Koehnle, Gregory A.; Annen, Michael J.; Everaerts, Albert I., Conformable abrasive articles and methods of making and using the same.
  93. Steckenrider,J. Scott; Snider,Gary W., Continuous contour polishing of a multi-material surface.
  94. Molnar, Charles J., Controlled lubricated finishing.
  95. Chopra Dinesh, Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with.
  96. Sun,Lizhong; Li,Shijian; Redeker,Fred C., Cu CMP polishing pad cleaning.
  97. Bui,Hoa T.; Kolb,Brant U.; Mitra,Sumita B., Dental fillers, pastes, and compositions prepared therefrom.
  98. Krishnashree Achuthan ; Steven C. Avanzino ; Kashmir S. Sahota, Dielectric protected chemical-mechanical polishing in integrated circuit interconnects.
  99. Wakabayashi, Satoshi; Yamaguchi, Kuniaki; Togawa, Tetsuji; Takada, Nobuyuki; Nabeya, Osamu, Dressing apparatus and polishing apparatus.
  100. Kendall, Philip E.; Park, Soon C.; Bruxvoort, Wesley J.; Culler, Scott R.; Williams, Jerry W., Dual cured abrasive articles.
  101. Wang,You; Tsai,Stan D.; Karuppiah,Lakshmanan; Diao,Jie; Jia,Renhe; Yilmaz,Alpay, Electrochemical method for Ecmp polishing pad conditioning.
  102. Sun, Lizhong; Li, Shijian, Electrochemically assisted chemical polish.
  103. Lower, Nathan P.; Wilcoxon, Ross K.; Wooldridge, James R.; Dlouhy, David W., Fabrication process for a flexible, thin thermal spreader.
  104. Molnar, Charles J., Finishing components and elements.
  105. Molnar, Charles J, Finishing element using finishing aids.
  106. Charles J Molnar, Finishing element with finishing aids.
  107. Molnar, Charles J, Finishing method for semiconductor wafers using a lubricating boundary layer.
  108. Charles J Molnar, Finishing semiconductor wafers with a fixed abrasive finishing element.
  109. Charles J. Molnar, Finishing with partial organic boundary layer.
  110. Goetz, Douglas P., Fixed abrasive article for use in modifying a semiconductor wafer.
  111. Goetz,Douglas P., Fixed abrasive article for use in modifying a semiconductor wafer.
  112. Molnar Charles J, Fixed abrasive finishing element having aids finishing method.
  113. Molnar Charles J, Fixed abrasive finishing method using lubricants.
  114. Schutz, James W.; Royce, Stacee L.; Annen, Michael J., Flexible abrasive product and method of making and using the same.
  115. Schutz, James W.; Royce, Stacee L.; Annen, Michael J.; Pieper, Jon R.; Sheely, Jeffrey D., Flexible abrasive product and method of making and using the same.
  116. Hunt,William J.; Kendall,Philip E.; Dahlke,Gregg D., Formulations for coated diamond abrasive slurries.
  117. Scott,Brandon Shane; Small,Robert J., Free radical-forming activator attached to solid and used to enhance CMP formulations.
  118. Siddiqui, Junaid Ahmed; Small, Robert J.; Castillo, Daniel Hernandez, Free radical-forming activator attached to solid and used to enhance CMP formulations.
  119. Lower, Nathan P.; Wilcoxon, Ross K.; Boone, Alan P.; Wyckoff, Nathaniel P.; Hamilton, Brandon C., Glass thick film embedded passive material.
  120. Lower, Nathan P.; Wilcoxon, Ross K.; Boone, Alan P.; Wyckoff, Nathaniel P.; Hamilton, Brandon C., Glass thick film embedded passive material.
  121. Brusic,Vlasta; Zhou,Renjie; Thompson,Christopher, Gold CMP composition and method.
  122. Osterheld, Thomas H., Grid relief in CMP polishing pad to accurately measure pad wear, pad profile and pad wear profile.
  123. Rouse Michael W. ; Deeb Victor M., Grinding stones.
  124. Chou, Jui-Lin; Chiu, Chia-Feng; Liao, Wen-Jen; Su, Xue-Shen, Grinding tool and method of manufacturing the same.
  125. Kotha, Sanjay; Sudarshan, Tirumalai S., Hemostatic composition.
  126. Kamboj, Sumant, Homogeneous fixed abrasive polishing pad.
  127. Gagliardi,John J.; Rueb,Chris J., In situ activation of a three-dimensional fixed abrasive article.
  128. Molnar, Charles J., In situ control with lubricant and tracking.
  129. Molnar,Charles J, In situ finishing control.
  130. Molnar, Charles J, In situ friction detector method and apparatus.
  131. Lower, Nathan P.; Wilcoxon, Ross K.; Boone, Alan P., Integrated circuit protection and ruggedization coatings and methods.
  132. Lower, Nathan P.; Wilcoxon, Ross K.; Boone, Alan P., Integrated circuit protection and ruggedization coatings and methods.
  133. Lower, Nathan P.; Boone, Alan P.; Wilcoxon, Ross K., Integrated circuit tampering protection and reverse engineering prevention coatings and methods.
  134. Wrschka, Peter; Robl, Werner; Goebel, Thomas, Integration scheme for metal gap fill, with fixed abrasive CMP.
  135. Gagliardi, John J.; Romero, Vincent D.; Coad, Eric C., Interrupted structured abrasive article and methods of polishing a workpiece.
  136. Wang, Yuchun; Tsai, Stan D.; Wijekoon, Kapila; Bajaj, Rajeev; Redeker, Fred C., Ion exchange materials for chemical mechanical polishing.
  137. Dunham, Ronald; Goubau, Wolfgang; Patel, Bhargav; Wong, Marvin; Yang, John Jaekoyun, Lapping of gold pads in a liquid medium for work hardening the surface of the pads.
  138. Kazuya Orii JP; Isao Saito JP; Yasutoshi Fujita JP; Toshimichi Sakurada JP; Masao Yamaguchi JP, Lapping oil composition for finish-grinding.
  139. Krusell, Wilbur; Travis, Glenn; Engdahl, Erik; Bagley, James, Linear reciprocating disposable belt polishing method and apparatus.
  140. Wilbur Krusell ; Glenn Travis ; Erik Engdahl ; James Bagley, Linear reciprocating disposable belt polishing method and apparatus.
  141. Ko,Sen Hou; Song,Kevin H., Low cost and low dishing slurry for polysilicon CMP.
  142. Kotha,Sanjay; Sudarshan,Tirumalai S., Magnetic fluid cushioning device for a footwear or shoe.
  143. Kotha,Sanjay; Sudarshan,Tirumalai S.; Radhakrishnan,Ramachandran, Magnetic fluid power generator device and method for generating power.
  144. Tolles, Robert D., Material for use in carrier and polishing pads.
  145. Wilcoxon, Ross K.; Lower, Nathan P.; Wooldridge, James R.; Dlouhy, David W.; Strzelczyk, Anthony J., Mechanically compliant thermal spreader with an embedded cooling loop for containing and circulating electrically-conductive liquid.
  146. Vacassy, Robert, Methanol-containing silica-based CMP compositions.
  147. Radhakrishnan,Ramachandran; Kotha,Sanjay; Sudarshan,Tirumalai S., Method and airbag inflation apparatus employing magnetic fluid.
  148. Ben Mooring ; Wilbur Krusell ; Glenn Travis ; Erik Engdahl, Method and apparatus for chemical mechanical planarization and polishing of semiconductor wafers using a continuous polishing member feed.
  149. Travis Glenn ; Pena Christopher, Method and apparatus for chemically-mechanically polishing semiconductor wafers.
  150. Boyd, John M., Method and apparatus for conditioning a polishing pad.
  151. Lacy, Michael S., Method and apparatus for conditioning a polishing pad with sonic energy.
  152. Radman, Allan M.; Jensen, Alan J.; Treichel, Helmuth; Boehm, Robert G.; Lacy, Michael S.; Dunton, Eric A., Method and apparatus for conditioning a polishing pad with sonic energy.
  153. Renteln, Peter; Jensen, Alan J.; Lamb, David S., Method and apparatus for conditioning fixed-abrasive polishing pads.
  154. Jensen, Alan J.; Stella, Mario; Zhao, Eugene; Renteln, Peter; Farber, Jeffrey, Method and apparatus for controlling CMP pad surface finish.
  155. Jensen, Alan J.; Stella, Mario; Zhao, Eugene; Renteln, Peter; Farber, Jeffrey, Method and apparatus for controlling CMP pad surface finish.
  156. Boyd, John M.; Lacy, Michael S., Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool.
  157. Boyd, John M.; Lacy, Michael S., Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool.
  158. John M. Boyd ; Michael S. Lacy, Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool.
  159. Boyd, John M., Method and apparatus for fixed-abrasive substrate manufacturing and wafer polishing in a single process path.
  160. Moon,Yongsik; Wijekoon,Kapila, Method and apparatus for polishing substrates.
  161. Schwappach, Karl; Boutaghou, Zine-Eddine, Method and apparatus for polishing with abrasive charged polymer substrates.
  162. Schwappach, Karl; Boutaghou, Zine-Eddine, Method and apparatus for processing sliders for disk drives, and to various processing media for the same.
  163. Wang,Yan; Tsai,Stan D.; Hu,Yongqi; Liu,Feng Q.; Chen,Liang Yuh; Mao,Daxin; Tran,Huyen Karen; Wohlert,Martin S.; Jia,Renhe; Tian,Yuan A., Method and apparatus for reduced wear polishing pad conditioning.
  164. Michael A. Walker, Method and apparatus for releasably attaching polishing pads to planarizing machines in mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies.
  165. Walker Michael A., Method and apparatus for releasably attaching polishing pads to planarizing machines in mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies.
  166. Pietsch, Georg; Kerstan, Michael, Method and apparatus for trimming the working layers of a double-side grinding apparatus.
  167. Sabde, Gundu M.; Lee, Whonchee, Method and apparatuses for planarizing microelectronic substrate assemblies.
  168. Sun,Lizhong; Tsai,Stan; Li,Shijian, Method and composition for the removal of residual materials during substrate planarization.
  169. Tsai, Stan; Sun, Lizhong; Li, Shijian, Method and composition for the selective removal of residual materials and barrier materials during substrate planarization.
  170. Kotha,Sanjay; Sudarshan,Tirumalai S., Method and kit for inducing hypoxia in tumors through the use of a magnetic fluid.
  171. Fang,Mingming; Ianiro,Michael R.; Eisenhour,Don, Method chemical-mechanical polishing and planarizing corundum, GaAs, GaP and GaAs/GaP alloy surfaces.
  172. Lizhong Sun ; Shijian Li ; Fritz Redeker, Method for abrasive-free metal CMP in passivation domain.
  173. Lo Yung-Tsun,TWX ; Li Kam-Tung,TWX ; Huang Kuan-Chieh,TWX, Method for actually measuring misalignment of via.
  174. Schroeder, David J.; Carter, Phillip; Chamberlain, Jeffrey P.; Miller, Kyle; Cherian, Isaac K., Method for copper CMP using polymeric complexing agents.
  175. Coppeta,Jonathan R., Method for fabricating micro optical elements using CMP.
  176. Visser, Robert G., Method for grinding glass.
  177. Kessel, Carl R.; Boardman, Larry D.; Webb, Richard J., Method for manufacturing thin substrate using a laminate body.
  178. Lin Chi-Fa,TWX ; Tseng Wen-Tsu,TWX ; Feng Min-Shinn,TWX, Method for mapping and adjusting pressure distribution of CMP processes.
  179. Roettger, Klaus; Heilmaier, Alexander; Mistur, Leszek; Tabata, Makoto; Dutschke, Vladimir; Olbrich, Torsten, Method for polishing a semiconductor wafer.
  180. Schwandner, Juergen; Koppert, Roland, Method for polishing a semiconductor wafer with a strained-relaxed Si1−xGex layer.
  181. Pietsch, Georg, Method for providing a respective flat working layer on each of the two working disks of a double-side processing apparatus.
  182. Boone, Alan P.; Lower, Nathan P.; Wilcoxon, Ross K., Method for providing near-hermetically coated integrated circuit assemblies.
  183. Boone, Alan P.; Lower, Nathan P.; Wilcoxon, Ross K., Method for providing near-hermetically coated integrated circuit assemblies.
  184. Wilcoxon, Ross K.; Lower, Nathan P.; Boone, Alan P., Method for providing near-hermetically coated, thermally protected integrated circuit assemblies.
  185. Petroski, Angela; Cooper, Richard D.; Fathauer, Paul; Perry, David; Macey, James, Method for securing a polishing pad to a platen for use in chemical-mechanical polishing of wafers.
  186. Pietsch, Georg, Method for the simultaneous double-side material-removing processing of at least three workpieces.
  187. Kerstan, Michael; Pietsch, Georg; Runkel, Frank; Bechtolsheim, Conrad von; Moeller, Helge, Method for the simultaneous double-sided material removal processing of a plurality of semiconductor wafers.
  188. Pietsch, Georg; Kerstan, Michael, Method for trimming the working layers of a double-side grinding apparatus.
  189. Pietsch, Georg; Kerstan, Michael, Method for trimming the working layers of a double-side grinding apparatus.
  190. Woo,Edward J.; Bange,Donna W.; Lamphere,Craig F., Method of abrading a workpiece.
  191. Sventek, Bruce A.; Lamphere, Craig F.; Graf, Timothy L.; Barry, John L., Method of cleaning glass.
  192. Vakanas, George P.; Voronov, Sergei L.; Ng, Luey Chon; Malouf, George E., Method of fabricating an identification mark utilizing a liquid film assisted by a laser.
  193. Gaeta, Anthony C.; You, Xiaorong; Rice, William C., Method of forming structured abrasive article.
  194. Yau, Wai-Fan; Cheung, David; Chopra, Nasreen Gazala; Lu, Yung-Cheng; Mandal, Robert; Moghadam, Farhad, Method of improving moisture resistance of low dielectric constant films.
  195. Culler, Scott R.; McArdle, James L.; Nelson, Jeffrey W.; Wallace, John T., Method of making an agglomerate particle.
  196. McArdle, James L.; Nelson, Jeffrey W.; Culler, Scott R.; Wallace, John T., Method of making ceramic aggregate particles.
  197. Paul J. Yancey, Method of manufacturing a polymer or polymer/composite polishing pad.
  198. Eda, Hajime; Matsui, Yukiteru; Shigeta, Atsushi; Ono, Takatoshi; Seta, Satoko, Method of manufacturing semiconductor device.
  199. Lin, Long-Hui, Method of piping defect detection.
  200. Carter, Phillip W.; Johns, Timothy P., Method of polishing a silicon-containing dielectric.
  201. Zhang,Jian; Sun,Fred; Wang,Shumin; Cherian,Isaac K.; Klingenberg,Eric H., Method of polishing a substrate with a polishing system containing conducting polymer.
  202. Webb,Richard J.; Clark,John C.; Rueb,Christopher J.; Gagliardi,John J., Method of polishing a wafer.
  203. Matsui, Harunobu; Harada, Daijitsu; Watabe, Atsushi; Ueda, Shuhei; Takeuchi, Masaki, Method of preparing substrate.
  204. Lower, Nathan P.; Brower, David M.; Wilcoxon, Ross K., Method of reinforcing a hermetic seal of a module.
  205. Horie, Yuji; Okuyama, Hiromitsu; Tanifuji, Tatsuya, Method of texturing.
  206. Anker, Joachim, Method of transferring a substantially disc-shaped workpiece, and device for carrying out this method.
  207. Gagliardi, John J., Method of using a soft subpad for chemical mechanical polishing.
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  209. Guthrie, Hung Chin; Jiang, Ming, Methodology of chemical mechanical nanogrinding for ultra precision finishing of workpieces.
  210. Stuart L. Meyer, Methods and apparatus for chemical mechanical planarization using a microreplicated surface.
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  216. Hardikar, Vishwas V., Methods and compositions for chemical mechanical planarization of ruthenium.
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  223. Smith, John Stephen; Hadley, Mark A.; Tu, Jay, Methods for creating elements of predetermined shape and apparatus using these elements.
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  226. Uhlenbrock,Stefan; Westmoreland,Don, Methods for planarization of Group VIII metal-containing surfaces using oxidizing gases.
  227. Sabde,Gundu M., Methods for planarization of group VIII metal-containing surfaces using a fixed abrasive article.
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  229. Vaartstra, Brian A., Methods for planarization of metal-containing surfaces using halogens and halide salts.
  230. Vaartstra, Brian A., Methods for planarization of metal-containing surfaces using halogens and halide salts.
  231. Annen, Michael J.; Felipe, Sr., Peter A.; Holland, Lowell W.; Spah, Adam M., Methods of removing defects in surfaces.
  232. Lugg, Paul S; Lehuu, Duy K, Multi-layered polishing pads.
  233. Sudarshan, Tirumalai S.; Kotha, Sanjay; Radhakrishnan, Ramachandran, Multifunctional particulate material, fluid, and composition.
  234. Yoon, Sang Ho; Min, Kyeong Ik, Nitride semiconductor light emitting device array.
  235. Barnes, Jeffrey A.; Liu, Jun; Zhang, Peng, Non-amine post-CMP composition and method of use.
  236. Kollodge,Jeffrey S.; Loesch,Christopher N., Pad constructions for chemical mechanical planarization applications.
  237. Small,Robert J.; Frey,Donald William; Tredinnick,Bruce; Hayden,Christopher G., Particulate or particle-bound chelating agents.
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  240. Sethuraman, Anantha R.; Seams, Christopher A., Planarized semiconductor interconnect topography and method for polishing a metal layer to form interconnect.
  241. Gundu M. Sabde, Planarizing solutions, planarizing machines, and methods for mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies.
  242. Moudry, Raymond Leroy; Baurceanu, Mihaela Ruxandra; Hoehn, Joel William; O'Konski, Jeffrey R., Platen for wafer polishing having diamond-ceramic composites.
  243. Ishikawa, Akira; Senga, Tatsuya, Polishing body, polisher, polishing method, and method for producing semiconductor device.
  244. Carter, Phillip W.; Johns, Timothy, Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios.
  245. Carter,Phillip W.; Johns,Timothy P., Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios.
  246. Dysard, Jeffrey M.; Johns, Timothy P., Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios.
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  248. Cherian, Isaac K.; Zhang, Jian; Sun, Fred; Wang, Shumin; Klingenberg, Eric H., Polishing composition containing conducting polymer.
  249. Kollodge, Jeffrey S., Polishing fluids and methods for CMP.
  250. Kollodge,Jeffrey S., Polishing fluids and methods for CMP.
  251. Lukanc Todd ; Sahota Kashmir S., Polishing pad and method for polishing porous materials.
  252. Kollodge, Jeffrey S.; Messner, Robert P., Polishing pad and method of use thereof.
  253. Cherian, Isaac K.; Anjur, Sriram P.; Grumbine, Steven K., Polishing pad comprising particles with a solid core and polymeric shell.
  254. Huh, Hyun; Lee, Sang Mok; Song, Kee Cheon; Kim, Seung geun; Son, Do Kwon, Polishing pad containing embedded liquid microelements and method of manufacturing the same.
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  258. Allison, William C.; Scott, Diane; Lefevre, Paul Andre; LaCasse, James P.; Simpson, Alexander William, Polishing pad with foundation layer and polishing surface layer.
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  262. Bajaj, Rajeev; Huang, Ping; Kerprich, Robert; Allison, William C.; Frentzel, Richard; Scott, Diane, Polishing pad with homogeneous body having discrete protrusions thereon.
  263. Lefevre, Paul Andre; Allison, William C.; LaCasse, James P.; Scott, Diane; Simpson, Alexander William; Huang, Ping; Charns, Leslie M., Polishing pad with polishing surface layer having an aperture or opening above a transparent foundation layer.
  264. Kessel, Carl R., Polishing pad with release layer.
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