초록 ▼

Method and apparatus are disclosed for growing diamond films on a non-diamond substrate, such as a silicon wafer. The substrate surface is subjected to nucleation by means of a microwave-generated plasma while applying an electrical bias to the substrate and while an electrode is positioned adjacent

Method and apparatus are disclosed for growing diamond films on a non-diamond substrate, such as a silicon wafer. The substrate surface is subjected to nucleation by means of a microwave-generated plasma while applying an electrical bias to the substrate and while an electrode is positioned adjacent to but spaced from the substrate surface. After the nucleation step, crystalline diamond is deposited on the nucleated surface from a carbon-containing plasma.

대표청구항 ▼

[ We claim:] [1.] A method of growing a diamond film by microwave chemical vapour deposition (CVD) on a non-diamond substrate which comprises effecting nucleation of the substrate surface for diamond growth by subjecting the surface to a microwave plasma while applying an electrical bias to the subs

[ We claim:] [1.] A method of growing a diamond film by microwave chemical vapour deposition (CVD) on a non-diamond substrate which comprises effecting nucleation of the substrate surface for diamond growth by subjecting the surface to a microwave plasma while applying an electrical bias to the substrate surface, wherein an electrode is introduced into the microwave plasma and above or adjacent to the substrate surface and crystalline diamond is deposited on the resulting nucleated surface from a carbon-containing plasma.