초록

A silicon film provided on a blocking film 102 on a substrate 101 is made amorphous by doping Si+, and in a heat-annealing process, crystallization is started in parallel to a substrate from an area 100 where nickel serving as a crystallization-promoting catalyst is introduced.

대표청구항 ▼

[ What is claimed is:] [1.] A thin-film transistor comprising:a semiconductor layer disposed between two insulating layers, said semiconductor layer containing a catalytic material;source and drain regions formed in said semiconductor layer;a channel region positioned between said source and drain r

[ What is claimed is:] [1.] A thin-film transistor comprising:a semiconductor layer disposed between two insulating layers, said semiconductor layer containing a catalytic material;source and drain regions formed in said semiconductor layer;a channel region positioned between said source and drain regions, said channel region being free from a portion where said catalytic material is added;a gate electrode formed adjacent to said channel region with one of said two insulating layers interposed therebetween,wherein said channel region comprises a plurality of needle-like or columnar crystals extending substantially in one direction parallel to said two insulating layers, andwherein said direction in which said crystals extend through the channel region is at a fixed angle with a direction in which carriers of said transistor flows.