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Apparatus and method for in-situ monitoring of chemical mechanical polishing operations 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B24B-049/00
  • B24B-051/00
출원번호 US-0605769 (1996-02-22)
발명자 / 주소
  • Birang Manoocher
  • Pyatigorsky Grigory
출원인 / 주소
  • Applied Materials, Inc.
대리인 / 주소
    Fish & Richardson
인용정보 피인용 횟수 : 254  인용 특허 : 19

초록 ▼

An in-situ method of measuring uniformity of a layer on a substrate during polishing of said layer, where the method includes the steps of directing a light beam toward the layer during polishing; monitoring an interference signal produced by the light beam reflecting off of the substrate; and compu

대표청구항 ▼

[ What is claimed is:] [1.] A substrate polishing system comprising:a platen which during processing holds a polishing pad;a polishing head which during processing holds the substrate against the polishing pad on the platen;an interferometer capable of generating a collimated light beam which during

이 특허에 인용된 특허 (19)

  1. Doan Trung T. (Boise ID) Meikle Scott (Boise ID), Chemical-mechanical polishing processes of planarizing insulating layers.
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  7. Lustig Naftali E. (Croton-on-Hudson NY) Saenger Katherine L. (Ossining NY) Tong Ho-Ming (Yorktown Heights NY), In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing.
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  8. Lustig Naftali E. (Croton on Hudson NY) Feenstra Randall M. (Mt. Kisco NY) Guthrie William L. (Hopewell Junction NY), In-situ endpoint detection method and apparatus for chemical-mechanical polishing using low amplitude input voltage.
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  9. Schultz Laurence D. (Boise ID), Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer.
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  10. Enke Knut (Johannesberg DEX) Hussla Ingo (Hanau DEX) Lorenz Gerhard (Alzenau DEX), Method and apparatus for monitoring layer erosion in a dry-etching process.
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  11. Sandhu Gurtej S. (Boise) Doan Trung T. (Boise ID), Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image o.
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  12. Cote William J. (Poughquag NY), Method for determining planarization endpoint during chemical-mechanical polishing.
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  14. Carr Jeffrey W. (Fishkill NY) David Lawrence D. (Wappingers Falls NY) Guthrie William L. (Hopewell Junction NY) Kaufman Frank B. (Amawalk NY) Patrick William J. (Newburgh NY) Rodbell Kenneth P. (Poug, Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor.
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  15. Nenadic Anton (Red Hook NY) Pasco Robert W. (Wappingers Falls NY), Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor.
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  16. Leach Michael A. (South Burlington VT) Machesney Brian J. (Burlington VT) Nowak Edward J. (Essex Junction VT), Method of measuring changes in impedance of a variable impedance load by disposing an impedance connected coil within th.
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  17. Brunsch Arwed (Stuttgart DEX) Ruh Wolf-Dieter (Sindelfingen DEX) Trippel Gerhard (Sindelfingen DEX), Method of measuring the thickness of the removed layer in subtractive workpiece processing.
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  18. Masuko Masami (Tokyo JPX) Ichikawa Chikanobu (Koshoku JPX), Method of ultrasonic control for lapping and an apparatus therefor.
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  19. Moriyama Shigeo (Tama JPX) Kawamura Yoshio (Kokubunji JPX) Homma Yoshio (Hinode-machi JPX) Kusukawa Kikuo (Fujino-machi JPX) Furusawa Takeshi (Hachioji JPX), Polishing method.
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