[특허]Self aligned contact etch using difluoromethane and trifluoromethane

[미국특허] Self aligned contact etch using difluoromethane and trifluoromethane 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-021/3213
출원번호	US-0956641 (1997-10-23)
발명자 / 주소	Hung Raymond Ding Jian Caulfield Joseph P. Yin Gerald Z.
출원인 / 주소	Applied Materials, Inc.
대리인 / 주소	Guenzer
인용정보	피인용 횟수 : 24 인용 특허 : 2

초록 ▼

An oxide etch process that is highly selective to nitride, thereby being beneficial for a self-aligned contact etch of silicon dioxide to an underlying thin layer of silicon nitride. The process uses difluoromethane (CH.sub.2 F.sub.2) for its strong polymer forming and a greater amount of trifluoromethane (CHF.sub.3) for its strong etching, and with a high diluent fraction of argon (Ar). The etch process is performed at a low pressure of about 20 milliTorr in a high-density plasma etching chamber.

대표청구항 ▼

[ What is claimed is:] [1.] A process for selectively etching oxide over nitride, comprising:placing a substrate comprising an oxide layer overlying a nitride layer into a plasma chamber;injecting into said chamber a gas mixture comprising a first amount of difluoromethane, a second amount of trifluoromethane, and a third amount of an inactive gas selected from the group consisting of argon and helium, said first, second, and third amounts summing to a fourth amount;exciting said gas mixture into a plasma to thereby selectively etch said oxide layer over said nitride layer;wherein a first ratio between said first and fourth amounts has a value of 10%.+-.2%; andwherein a second ratio between said second and fourth amounts has a value of 14% .+-.2.8%.

이 특허에 인용된 특허 (2) 인용/피인용 타임라인 분석

Blalock Guy (Boise ID) Becker David S. (Boise ID) Roe Fred (Boise ID), Process for selectively etching a layer of silicon dioxide on an underlying stop layer of silicon nitride.
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Marks Jeffrey (San Jose CA) Collins Kenneth S. (San Jose CA) Yang Chan-Lon (Los Gatos CA) Groechel David W. (Sunnyvale CA) Keswick Peter R. (Newark CA), Selectivity for etching an oxide over a nitride.
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이 특허를 인용한 특허 (24) 인용/피인용 타임라인 분석

Lee, Brian, Consolidation method of junction contact etch for below 150 nanometer deep trench-based DRAM devices.
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Ko Kei-Yu ; Li Li ; Blalock Guy T., Etchant with selectivity for doped silicon dioxide over undoped silicon dioxide and silicon nitride, processes which employ the etchant, and structures formed thereby.
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Ko, Kei-Yu; Li, Li; Blalock, Guy T., Etchant with selectivity for doped silicon dioxide over undoped silicon dioxide and silicon nitride, processes which employ the etchant, and structures formed thereby.
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Ko, Kei-Yu; Li, Li; Blalock, Guy T., Etchant with selectivity for doped silicon dioxide over undoped silicon dioxide and silicon nitride, processes which employ the etchant, and structures formed thereby.
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Ko,Kei Yu; Li,Li; Blalock,Guy T., Etchant with selectivity for doped silicon dioxide over undoped silicon dioxide and silicon nitride, processes which employ the etchant, and structures formed thereby.
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Brian Lee TW, Gate contact etch sequence and plasma doping method for sub-150 NM DT-based DRAM devices.
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Iwanaka, Makoto; Takami, Shigeki; Ike, Nobukazu; Sanji, Hiroaki; Kawaguchi, Miyoshi; Ideshio, Yukihiko; Okuwaki, Shigeru, Hybrid drive device.
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Heineck,Lars Peter; Schweeger,Giorgio, MOS transistor in a single-transistor memory cell having a locally thickened gate oxide.
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Trapp,Shane J., Method for forming a contact opening in a semiconductor device.
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Park, Byung-jun; Hwang, Yoo-sang, Method of fabricating a DRAM semiconductor device.
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Donohoe Kevin G. ; Becker David S., Method of forming high aspect ratio apertures.
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Donohoe, Kevin G.; Becker, David S., Method of forming high aspect ratio apertures.
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Donohoe, Kevin G.; Becker, David S., Method of forming high aspect ratio apertures.
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Donohoe,Kevin G.; Becker,David S., Method of forming high aspect ratio apertures.
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Kevin G. Donohoe ; David S. Becker, Method of forming high aspect ratio apertures.
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Torek Kevin J., Method of making an oxide structure having a finely calibrated thickness.
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James A. Stinnett ; Cynthia B. Brooks ; Walter R. Merry ; Jason Regis, Oxide plasma etching process with a controlled wineglass shape.
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Kevin J. Torek, Oxide structure having a finely calibrated thickness.
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Eppler, Aaron; Srinivasan, Mukund; Chebi, Robert, Process for etching dielectric films with improved resist and/or etch profile characteristics.
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Yu, Hong; Liu, Huang, Reliable contacts.
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Yu, Hong; Liu, Huang, Reliable contacts.
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Ko,Kei Yu; Li,Li; Blalock,Guy T., Semiconductor device having a substrate an undoped silicon oxide structure and an overlaying doped silicon oxide structure with a sidewall terminating at the undoped silicon oxide structure.
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Ko Kei-Yu ; Li Li ; Blalock Guy T., Semiconductor device having a substrate, an undoped silicon oxide structure, and an overlying doped silicon oxide structure with a side wall terminating at the undoped silicon oxide structure.
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Ohmi,Tadahiro; Sugawa,Shigetoshi; Hirayama,Masaki, Substrate processing method and substrate processing apparatus.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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[미국특허] Self aligned contact etch using difluoromethane and trifluoromethane 원문보기