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Device and method of manufacture for an integrated circuit having a BIST circuit and bond pads incorporated therein 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-023/48
출원번호 US-0022733 (1998-02-12)
발명자 / 주소
  • Chittipeddi Sailesh
  • Cochran William T.
  • Smooha Yehuda
출원인 / 주소
  • Lucent Technologies Inc.
인용정보 피인용 횟수 : 40  인용 특허 : 3

초록

The present invention provides, in one embodiment, an integrated circuit having a substrate and active devices formed on the surface of the substrate. Other embodiments of the integrated circuit provide for having at least either three or four metal layers. In a particular embodiment of the present

대표청구항

[ What is claimed is:] [1.] An integrated circuit having a substrate and active devices formed on the surface of said substrate and comprising:a bond pad formed over a portion of said active devices and having a bond pad footprint;a patterned metal layer having a metal layer footprint and located be

이 특허에 인용된 특허 (3)

  1. Matsumoto Hiroshi (Hyogo JPX), Semiconductor device in which wiring layer is formed below bonding pad.
  2. Nozaki Masahiko (Hyogo JPX), Semiconductor device structure including multiple interconnection layers with interlayer insulating films.
  3. Abe Masahiro (Yokohama JPX) Aoyama Masaharu (Fujisawa JPX) Ajima Takashi (Kamakura JPX) Yonezawa Toshio (Yokosuka JPX), Semiconductor device with an improved bonding section.

이 특허를 인용한 특허 (40)

  1. Edgar R. Zuniga ; Samuel A. Ciani, Bonding over integrated circuits.
  2. Huang,Tai Chun; Lee,Tze Liang, Bonding pad and via structure design.
  3. Hyun-Chul Kim KR, Bonding pad structure of a semiconductor device and method of fabricating the same.
  4. Efland,Taylor R., Circuit method integrating the power distribution functions of the circuits and leadframes into the chip surface.
  5. Efland, Taylor R., Circuit structure integrating the power distribution functions of circuits and leadframes into the chip surface.
  6. Antley, Richard L.; Whetsel, Lee D., Connecting analog response to separate strobed comparator input on IC.
  7. Antley, Richard L.; Whetsel, Lee D., Integrated circuit having electrically isolatable test circuitry.
  8. Furukawa, Toshiharu; Hakey, Mark Charles; Holmes, Steven J.; Horak, David V.; Koburger, III, Charles William; Lam, Chung Hon, Layout and process to contact sub-lithographic structures.
  9. Ker, Ming-Dou; Jiang, Hsin-Chin, Low-capacitance bonding pad for semiconductor device.
  10. Richard C. Blish ; Colin D. Hatchard ; Ian Morgan ; Michael Fliesler, Method and apparatus for achieving bond pad crater sensing and ESD protection integrated circuit products.
  11. Kazuyoshi Fukuda JP, Method of inspecting semiconductor chip with projecting electrodes for defects.
  12. Singh,Inderjit; Marks,Howard Lee; Greco,Joseph David, Pad over active circuit system and method with frame support structure.
  13. Singh,Inderjit; Marks,Howard Lee; Greco,Joseph David, Pad over active circuit system and method with meshed support structure.
  14. Lin,Mou Shiung; Lee,Jin Yuan, Post passivation method for semiconductor chip or wafer.
  15. Fukuda Kazuyoshi,JPX, Semiconductor chip with corner electrode terminals and detecting wiring for defect inspection.
  16. Suzuki,Takehiro, Semiconductor device using inorganic film between wiring layer and bonding pad.
  17. Hiroshi Hatada JP; Nobuaki Otsuka JP; Osamu Hirabayashi JP; Yasushi Kameda JP, Semiconductor device with test circuit.
  18. Bendall, R. Evan, Semiconductor pad construction enabling pre-bump probing by planarizing the post-sort pad surface.
  19. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  20. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  21. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  22. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  23. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  24. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  25. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  26. Lin, Mou-Shiung; Lee, Jin-Yuan, Top layers of metal for high performance IC's.
  27. Lin, Mou-Shiung; Lee, Jin-Yuan, Top layers of metal for high performance IC's.
  28. Lin,Mou Shiung, Top layers of metal for high performance IC's.
  29. Lin,Mou Shiung, Top layers of metal for high performance IC's.
  30. Lin,Mou Shiung, Top layers of metal for high performance IC's.
  31. Lin,Mou Shiung, Top layers of metal for high performance IC's.
  32. Lin,Mou Shiung, Top layers of metal for high performance IC's.
  33. Lin,Mou Shiung, Top layers of metal for high performance IC's.
  34. Lin,Mou Shiung, Top layers of metal for high performance IC's.
  35. Lin,Mou Shiung, Top layers of metal for high performance IC's.
  36. Lin,Mou Shiung, Top layers of metal for high performance IC's.
  37. Lin,Mou Shiung, Top layers of metal for high performance IC's.
  38. Lin,Mou Shiung, Top layers of metal for high performance IC's.
  39. Lin,Mou Shiung, Top layers of metal for high performance IC's.
  40. Lin, Mou-Shiung; Chou, Chiu-Ming; Chou, Chien-Kang, Top layers of metal for integrated circuits.
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