초록 ▼

A semiconductor device equipped with secondary pads having adequate arrangement for an arbitrary packaging process. The secondary pads are connected with the primary pads of the semiconductor device with a novel lead wire structure, which is characterized by its low electric resistance, good mechani

A semiconductor device equipped with secondary pads having adequate arrangement for an arbitrary packaging process. The secondary pads are connected with the primary pads of the semiconductor device with a novel lead wire structure, which is characterized by its low electric resistance, good mechanical strength to protect active components of the device, good adhesion to bumps, and anti-electromigration property. The semiconductor device has: semiconductor circuit elements 2 embedded in a semiconductor substrate 1; a plurality of conductive primary pads 4 each formed in a region above, and surrounding, the circuit element 2; a first protective insulation substrate 5 covering the substrate and having first openings 6 for the primary pads 4; lead wires 7 each consisting of a conductive bulk layer 15 made of copper and a metallic top layer 16, the bulk layer formed on the first protective insulation substrate 5 and having one end connected with a corresponding one of the primary pads 4 through an associated opening 6 and the other end located in a region surrounding the opening 6, while the top layer made of a metal having Vickers hardness of more than 100; and a second protective insulation substrate 8 having second openings 9 for exposing the top surfaces of the other ends of the lead wires 7 serving as the secondary pads 17.

대표청구항 ▼

[ What we claim is:] [1.] A semiconductor device comprising:semiconductor elements formed in a semiconductor substrate;a plurality of first conductive pads formed in a first region above and surrounding said semiconductor circuit elements;a first protective insulating film formed on or above said pl

[ What we claim is:] [1.] A semiconductor device comprising:semiconductor elements formed in a semiconductor substrate;a plurality of first conductive pads formed in a first region above and surrounding said semiconductor circuit elements;a first protective insulating film formed on or above said plurality of first conductive pads and said semiconductor elements, said first protective insulating film having a plurality of first openings for exposing each of said plurality of first conductive pads;a lead wire including a lower conductive layer of copper which has an end portion connected to one of said plurality of first conductive pads through said first opening and another end portion extending to a second region surrounding said first openings on said first protective insulating film, and including an upper conductive layer made of metal having Vickers hardness greater than 70; anda second protective insulating film having a second opening formed for exposing said another end portion of said lead wire for serving as a second conductive pad.