초록 ▼

A crucible in which a semiconductor material is melted and held during a crystal growing process. The crucible includes a body of vitreous silica having a bottom wall and a sidewall formation extending up from the bottom wall and defining a cavity for holding the molten semiconductor material. The s

A crucible in which a semiconductor material is melted and held during a crystal growing process. The crucible includes a body of vitreous silica having a bottom wall and a sidewall formation extending up from the bottom wall and defining a cavity for holding the molten semiconductor material. The sidewall formation has an inner and an outer surface. A first devitrification promoter on the inner surface of the sidewall formation is distributed such that a first layer of substantially devitrified silica is formed on the inner surface of the crucible which is in contact with the molten semiconductor material when the semiconductor material is melted in the crucible during the crystal growing process. A second devitrification promoter on the outer surface of the sidewall formation is distributed such that a second layer of substantially devitrified silica is formed on the outer surface of the crucible when the semiconductor material is melted in the crucible during the crystal growing process. The first substantially devitrified silica layer is such that it promotes uniform dissolution of the inner surface and in so doing significantly reduces the release of crystalline silica particulates into the molten semiconductor material as a crystal is pulled from the molten semiconductor material. The second substantially devitrified silica layer is such that it reinforces the vitreous silica body.

대표청구항 ▼

[ We claim:] [1.] A crucible in which a semiconductor material is melted and held during a crystal growing process, the crucible comprisinga body of vitreous silica having a bottom wall and a sidewall formation extending up from the bottom wall and defining a cavity for holding the molten semiconduc

[ We claim:] [1.] A crucible in which a semiconductor material is melted and held during a crystal growing process, the crucible comprisinga body of vitreous silica having a bottom wall and a sidewall formation extending up from the bottom wall and defining a cavity for holding the molten semiconductor material, the sidewall formation and the bottom wall each having an inner and an outer surface; anda first devitrification promoter on the inner surface of the sidewall formation, the inner surface of the bottom wall lacking the first devitrification promoter, the distribution of first devitrification promoter on the inner surface of the sidewall formation being such that a first layer of substantially devitrified silica is formed on the inner surface of the crucible which is in contact with the molten semiconductor material when the semiconductor material is melted in the crucible during the crystal growing process.