초록 ▼

A bidirectional lateral insulated gate bipolar transistor (IGBT) includes two gate electrodes. The IGBT can conduct current in two directions. The IGBT relies on a double RESURF structure to provide high voltage blocking in both directions. The IGBT is symmetrical, having an N-type drift region in c

A bidirectional lateral insulated gate bipolar transistor (IGBT) includes two gate electrodes. The IGBT can conduct current in two directions. The IGBT relies on a double RESURF structure to provide high voltage blocking in both directions. The IGBT is symmetrical, having an N-type drift region in contact with an oxide layer. A P-type region is provided above the N-type drift region, having a portion more heavily doped with P-type dopants. The double RESURF structure can be provided by a buried oxide layer, a floating doped region, or a horizontal PN junction. The IGBT can be utilized in various power operations, including a matrix switch or a voltage source converter.

대표청구항 ▼

[ What is claimed is:] [1.] A bidirectional lateral insulated gate bipolar transistor, comprising:a semiconductor substrate;a drift region disposed above the substrate, the drift region having a first end, a second end, and a middle section;a buried oxide layer disposed between the substrate and the

[ What is claimed is:] [1.] A bidirectional lateral insulated gate bipolar transistor, comprising:a semiconductor substrate;a drift region disposed above the substrate, the drift region having a first end, a second end, and a middle section;a buried oxide layer disposed between the substrate and the drift region as a RESURF structure;an emitter/collector region disposed above the first end of the drift region, the emitter/collector region having a first portion and a second portion, the first portion being more heavily doped with a first type dopant than the second portion;a collector/emitter region disposed above the second end of the drift region, the collector/emitter region having a first portion and a second portion, the first portion being more heavily doped with the first type dopant than the second portion;a first region disposed above the emitter/collector region, the first region being doped with a second type dopant, the second type dopant having an opposite conductivity type to the first dopant;a second region disposed above the collector/emitter region, the second region being doped with the second type dopant;a gate oxide layer disposed above the middle section of the drift region;an emitter/collector contact coupled to the first region and the emitter/collector region;a collector/emitter contact coupled to the second region and the collector/emitter region, wherein the drift region includes a channel area for laterally conducting current between the collector/emitter contact and the emitter/collector contact;a first gate electrode coupled to the gate oxide layer and disposed above the first region;a second gate electrode coupled to the gate oxide layer and disposed above the second region; anda doped region disposed between the gate oxide layer and the middle section at the drift region, the doped region being associated with a second RESURF structure, the doped region being isolated from collector/emitter region and the emitter/collector region.