초록 ▼

Concentration of metal element which promotes crystallization of silicon and which exists within a crystal silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is implemented after introducing nickel element to an amorphous silicon film 103. The

Concentration of metal element which promotes crystallization of silicon and which exists within a crystal silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is implemented after introducing nickel element to an amorphous silicon film 103. Then, after obtaining the crystal silicon film, another heat treatment is implemented within an oxidizing atmosphere at a temperature higher than that of the previous heat treatment. At this time, HCl or the like is added to the atmosphere. A thermal oxide film 106 is formed in this step. At this time, gettering of the nickel element into the thermal oxide film 106 takes place. Next, the thermal oxide film 106 is removed. Thereby, a crystal silicon film 107 having low concentration of the metal element and a high crystallinity can be obtained.

대표청구항 ▼

[ We claim:] [1.] A method for fabricating a semiconductor device, comprising steps of:introducing a catalyst which promotes crystallization of silicon to an amorphous semiconductor film comprising silicon;crystallizing said amorphous semiconductor film by a first heat treatment to obtain a crystall

[ We claim:] [1.] A method for fabricating a semiconductor device, comprising steps of:introducing a catalyst which promotes crystallization of silicon to an amorphous semiconductor film comprising silicon;crystallizing said amorphous semiconductor film by a first heat treatment to obtain a crystalline semiconductor film comprising silicon;reducing said catalyst existing within said crystalline semiconductor film by a second heat treatment within an oxidizing atmosphere containing a halogen element;removing a first thermal oxide film formed by said second heat treatment; andforming a second thermal oxide film on said crystalline semiconductor film by a third heat treatment after removing the first thermal oxide film.