초록 ▼

A radio-frequency circuit (20) includes a hybrid integrated circuit (24) having a passive circuit element (38) and a d-c biasing circuit element (54) embedded within a first substrate (32) of a low cost and rugged first semiconducting material, and first and second active circuit elements (36, 40) e

A radio-frequency circuit (20) includes a hybrid integrated circuit (24) having a passive circuit element (38) and a d-c biasing circuit element (54) embedded within a first substrate (32) of a low cost and rugged first semiconducting material, and first and second active circuit elements (36, 40) embedded within second and third substrates (44, 46), respectively, of a second semiconductor material having the characterisitics of greater frangibility but higher gain than the first semiconductor material. The first and second activ circuit elements (36, 40) are substantially first and second single components (36, 40), and are each electrically coupled to the passive circuit element (38). The d-c biasing circuit element (54) is electrically coupled to the first and second active circuit elements (36, 40). The second and third substrates (44, 46) are physically coupled to the first substrate (32), which is thicker than either the second or third substrate (44, 46).

대표청구항 ▼

[ What is claimed is:] [1.] A radio-frequency (RF) circuit comprising:a first passive RF matching element fabricated within a first substrate at a first embeddment level the first substrate being selected from the group consisting of silicon, glass. Teflon and aluminia;an RF amplifier circuit fabric

[ What is claimed is:] [1.] A radio-frequency (RF) circuit comprising:a first passive RF matching element fabricated within a first substrate at a first embeddment level the first substrate being selected from the group consisting of silicon, glass. Teflon and aluminia;an RF amplifier circuit fabricated within a second substrate physically coupled to said first substrate, said RF amplifier circuit being electrically coupled to said first passive RF matching element, the second substrate being selected from the group consisting of gallium arsenide (GaAs), indium phosphide and silicon germanium;a second passive RF matching element fabricated within said first substrate at said first embeddment level and electrically coupled to said RF amplifier circuit; anda DC bias circuit fabricated within the first substrate at a second embeddment level, the DC bias circuit for providing DC bias current to the RF amplifier circuit, the second embeddment level being non-coplanar with the first embeddment level.