초록 ▼

A process for the low temperature deposition of a thin film of borophosphosilicate glass ("BPSG") for use in semiconductor devices, such as DRAMs, is disclosed. The process includes utilizing R--OH groups as reagents to provide additional --OH groups so that an intermediate {Si(OH).sub.4 }.sub.n is

A process for the low temperature deposition of a thin film of borophosphosilicate glass ("BPSG") for use in semiconductor devices, such as DRAMs, is disclosed. The process includes utilizing R--OH groups as reagents to provide additional --OH groups so that an intermediate {Si(OH).sub.4 }.sub.n is formed having superior reflow properties so that the annealing and reflow steps may occur at temperatures less than 750.degree. C., which is the current processing temperature.

대표청구항 ▼

[ We claim:] [1.] A process comprising the steps of:a) depositing an initial thin film of doped silicon oxide onto a semiconductor structure at a temperature of less than 750.degree. C.;b) annealing the initial thin film of doped silicon oxide in situ; andc) depositing a final thin film of doped sil

[ We claim:] [1.] A process comprising the steps of:a) depositing an initial thin film of doped silicon oxide onto a semiconductor structure at a temperature of less than 750.degree. C.;b) annealing the initial thin film of doped silicon oxide in situ; andc) depositing a final thin film of doped silicon oxide onto the initial thin film at a temperature of less than 750.degree. C., wherein highly conforming insulation material is formed over the semiconductor structure.