초록 ▼

A semiconductor device includes a self-aligned refractory metal constituent in a recess in a semiconductor substrate and having the same plane pattern as a bottom surface of the recess. The width of the constituent is determined by the plane pattern of the recess and, accordingly, the pattern width

A semiconductor device includes a self-aligned refractory metal constituent in a recess in a semiconductor substrate and having the same plane pattern as a bottom surface of the recess. The width of the constituent is determined by the plane pattern of the recess and, accordingly, the pattern width of the constituent is easily controlled by the plane pattern of the recess.

대표청구항 ▼

[ What is claimed is:] [1.] A semiconductor device comprising:a semiconductor substrate having a surface and a recess at the surface, the recess having a bottom surface and side walls transverse to the bottom surface, the semiconductor substrate further comprising a channel region at the bottom surf

[ What is claimed is:] [1.] A semiconductor device comprising:a semiconductor substrate having a surface and a recess at the surface, the recess having a bottom surface and side walls transverse to the bottom surface, the semiconductor substrate further comprising a channel region at the bottom surface of the recess, and source and drain regions located at opposite sides of the recess and in the semiconductor substrate; anda refractory metal material gate electrode having a varying thickness including a first thickness at a central location between the side walls of the recess, the thickness gradually decreasing from the first thickness toward the side walls, the gate electrode covering and contacting the bottom surface and the side walls of the recess.