초록 ▼

An electron beam lithography system having a beamlet shaping section that includes a first multi-aperture array having m rows and n columns of apertures having a first shape and a second multi-aperture array with m rows and n columns of apertures having a second shape. Electron beamlets formed by th

An electron beam lithography system having a beamlet shaping section that includes a first multi-aperture array having m rows and n columns of apertures having a first shape and a second multi-aperture array with m rows and n columns of apertures having a second shape. Electron beamlets formed by the first multi-aperture array are deflected by a deflector unit before passing through the second multi-aperture array. The superposition of the electron beamlets on the second multi-aperture produces electron beamlets having a selected shape. Deflection logic on an active beam aperture array blank selected electron beamlets. The deflection logic can be updated with the next logic pattern as the current logic pattern is being executed. The unblanked electron beamlets are directed onto a surface to be exposed. The deflection logic on the active beam aperture array, and the multi-aperture arrays, are shielded from electrons and x-rays generated by the electrons striking surfaces within the electron beam lithography system. Sensitive deflection logic is radiation hardened to prevent degradation.

대표청구항 ▼

[ What is claimed is:] [1.] An electron-beam lithography system, comprising:a source of electrons;a stage supporting an object to be exposed by the electrons;a beamlet shaping section disposed between the source of electrons and the object to be exposed by the electrons comprising a first multi-aper

[ What is claimed is:] [1.] An electron-beam lithography system, comprising:a source of electrons;a stage supporting an object to be exposed by the electrons;a beamlet shaping section disposed between the source of electrons and the object to be exposed by the electrons comprising a first multi-aperture array having m rows and n columns of apertures having a first shape and a second multi-aperture array having m rows and n columns of apertures having a second shape;a beamlet blanking section disposed between the beamlet shaping section and the object;a first electron lens group directing electrons emitted from the source of electrons into a collimated beam in an axial direction towards the first multi-aperture array;a second electron lens group directing each electron beamlet in the array of electron beamlets formed by the first multi-aperture array towards the center of a corresponding aperture in the second multi-aperture array; andan electron deflector disposed between the first multi-aperture array and the second multi-aperture array.