초록 ▼

Method is provided for controlling the concentration of a dopant introduced into an epitaxial film during CVD or sublimation growth by controlling the energy of dopant atoms impinging on the film in a supersonic beam. Precursor materials may also be introduced by supersonic beam. Energy of the dopan

Method is provided for controlling the concentration of a dopant introduced into an epitaxial film during CVD or sublimation growth by controlling the energy of dopant atoms impinging on the film in a supersonic beam. Precursor materials may also be introduced by supersonic beam. Energy of the dopant atoms may be changed by changing flow conditions in the supersonic beam or changing carrier gases. Flow may be continuous or pulsed. Examples of silicon carbide doping are provided.

대표청구항 ▼

[ What we claim is:] [1.] A method for doping a semiconductor film during epitaxial growth by chemical vapor deposition or sublimation, comprising the steps of:providing a substrate at a selected temperature in a growth chamber having selected pressure conditions suitable for epitaxial growth;introd

[ What we claim is:] [1.] A method for doping a semiconductor film during epitaxial growth by chemical vapor deposition or sublimation, comprising the steps of:providing a substrate at a selected temperature in a growth chamber having selected pressure conditions suitable for epitaxial growth;introducing a plurality of growth precursor materials into the growth chamber;introducing through a nozzle a supersonic beam comprising a carrier gas and a dopant gas into the growth chamber and impinging the supersonic beam onto the substrate at a first selected energy, the distance from the nozzle to the substrate and the pressure conditions in the growth chamber being selected so as to maintain supersonic flow conditions therebetween; andallowing growth to continue until a film having a selected dopant concentration and of selected thickness is formed.