초록 ▼

A thin layer of semiconductor material is produced by implanting ions through a flat face of a semiconductor wafer in order to create a layer of microcavities, the ion dose being within a specific range in order to avoid the formation of blisters on the flat face. The resulting wafer is then subject

A thin layer of semiconductor material is produced by implanting ions through a flat face of a semiconductor wafer in order to create a layer of microcavities, the ion dose being within a specific range in order to avoid the formation of blisters on the flat face. The resulting wafer is then subjected to a thermal treatment step in order to achieve coalescence of the microcavities. During or following the thermal treatment, a thin layer is separated from the rest of the wafer by application of mechanical force.

대표청구항 ▼

[ We claim:] [1.] In a method of producing a thin layer of semiconductor material from a wafer of said material, wherein a semiconductor wafer having a flat face is subjected to ion implantation by bombarding said flat face with ions of a rare gas or hydrogen whereby to produce within the volume of

[ We claim:] [1.] In a method of producing a thin layer of semiconductor material from a wafer of said material, wherein a semiconductor wafer having a flat face is subjected to ion implantation by bombarding said flat face with ions of a rare gas or hydrogen whereby to produce within the volume of said wafer and at a depth approximate to the penetration of the ions, a layer of microcavities separating the wafer into a lower region constituting the mass of the substrate and an upper region constituting the thin film, and the wafer is subjected to a thermal treatment, and the thin film upper region separated from the lower region substrate mass, the improvement wherein the ion implantation step is carried out with an ion dosage level sufficient to create microcavities to embrittle said wafer along a line of implantation, but below the dosage level sufficient to cause the wafer to separate during said thermal treatment, and, during or following said thermal treatment applying a mechanical force sufficient to separate said wafer along the line of implantation into a thin top layer and a lower layer comprising the remainder of the mass of the substrate.