초록 ▼

An n-cap layer is formed on a top surface of p-type clad layers, the p-type clad layer is a top layer of a stacked structure having a pn-junction for emitting carriers into light-emitting region of a GaN based light-emitting device, thus increasing the activation ratio of acceptor impurities in the

An n-cap layer is formed on a top surface of p-type clad layers, the p-type clad layer is a top layer of a stacked structure having a pn-junction for emitting carriers into light-emitting region of a GaN based light-emitting device, thus increasing the activation ratio of acceptor impurities in the p-type clad layers. The n-cap layer is used also as a current blocking layer, thereby constructing a current-blocked structure. The n-cap layer should preferably be made of In.sub.u Al.sub.v Ga.sub.1-u-v N (0

대표청구항 ▼

[ What is claimed is:] [1.] A GaN based optoelectronic device having a stacked structure comprising:a light-emitting region;an n-type semiconductor region for injecting electrons into the light-emitting region, disposed under the light-emitting region;a p-type semiconductor region disposed on the li

[ What is claimed is:] [1.] A GaN based optoelectronic device having a stacked structure comprising:a light-emitting region;an n-type semiconductor region for injecting electrons into the light-emitting region, disposed under the light-emitting region;a p-type semiconductor region disposed on the light-emitting region, for injecting holes into the light-emitting region; andan n-cap layer consisting of In.sub.u Al.sub.v Ga.sub.1-u-v N(0