초록 ▼

A thick plated interconnect (80) comprising a copper lead (50) and a bonding cap (84) coupled to the copper lead (50). The bonding cap (84) may include a bondable member (86) formed from a bondable layer (62) comprising aluminum. A barrier member (88) may be formed from a barrier layer (60). The bar

A thick plated interconnect (80) comprising a copper lead (50) and a bonding cap (84) coupled to the copper lead (50). The bonding cap (84) may include a bondable member (86) formed from a bondable layer (62) comprising aluminum. A barrier member (88) may be formed from a barrier layer (60). The barrier member (88) may be disposed between the bondable member (86) and the copper lead (50).

대표청구항 ▼

[ What is claimed is:] [1.] A semiconductor device, comprising:a thick plated interconnect, comprising:a section of a copper seed layer;a copper lead over the section of the copper seed layer;a bonding cap coupled to the copper lead, comprising:a barrier member formed from a section of a barrier lay

[ What is claimed is:] [1.] A semiconductor device, comprising:a thick plated interconnect, comprising:a section of a copper seed layer;a copper lead over the section of the copper seed layer;a bonding cap coupled to the copper lead, comprising:a barrier member formed from a section of a barrier layer over the copper lead;a bondable member formed from a section of a bondable layer comprising aluminum over the barrier member;an auxiliary interconnect, comprising:a second section of the copper seed layer;an auxiliary barrier member formed from a second section of the barrier layer over the second section of the copper seed layer; andan auxiliary bondable member formed from a second section of the layer over the auxiliary barrier member.