초록 ▼

A thin-film vapor deposition apparatus has a reaction chamber for holding therein a substrate in an atmosphere isolated from an ambient atmosphere. For depositing a thin film on the substrate, the temperature of an inner wall of the reaction chamber is adjusted to control the temperature of the atmo

A thin-film vapor deposition apparatus has a reaction chamber for holding therein a substrate in an atmosphere isolated from an ambient atmosphere. For depositing a thin film on the substrate, the temperature of an inner wall of the reaction chamber is adjusted to control the temperature of the atmosphere in the reaction chamber, and the temperature of the substrate is also adjusted independently of the temperature of the atmosphere in the reaction chamber, while the substrate is being rotated at a high speed in the reaction chamber. Reactant gases required to deposit a thin film on the substrate are ejected from a reactant gas elector head toward the substrate in the reaction chamber. Remaining and excessive gases are discharged out of the reaction chamber.

대표청구항 ▼

[ What is claimed is:] [1.] A thin-film vapor deposition apparatus comprising:a reaction chamber for holding therein a substrate in an atmosphere isolated from an ambient atmosphere;substrate rotating means for rotating at a high speed the substrate in said reaction chamber, said rotating means comp

[ What is claimed is:] [1.] A thin-film vapor deposition apparatus comprising:a reaction chamber for holding therein a substrate in an atmosphere isolated from an ambient atmosphere;substrate rotating means for rotating at a high speed the substrate in said reaction chamber, said rotating means comprising a hollow rotor rotatably supported by a magnetic bearing device and having an end projecting into said reaction chamber, and a substrate support member mounted on said end of said rotor for supporting the substrate;a reactant gas supply device for ejecting a reactant gas toward the substrate supported on said support member for depositing a thin film on the substrate;reaction chamber temperature control means for adjusting the temperature of an inner wall of said reaction chamber;substrate temperature control means for controlling the temperature of the substrate; andan evacuation device for evacuating gases from said reaction chamber.