초록 ▼

A method and apparatus for measuring and controlling the diameter of a silicon single crystal ingot grown by the Czochralski technique using dual optical cameras focused on diametrically opposed edges of the meniscus of the growing crystal to measure the actual crystal diameter. The crystal growth p

A method and apparatus for measuring and controlling the diameter of a silicon single crystal ingot grown by the Czochralski technique using dual optical cameras focused on diametrically opposed edges of the meniscus of the growing crystal to measure the actual crystal diameter. The crystal growth parameters can be adjusted in response to the measured diameter to maintain a constant, desired diameter. The method and apparatus of the invention provide a continuous accurate measurement of the crystal diameter and avoid unnecessary adjustments to the crystal growth conditions resulting from diameter measurement errors due to the effects of crystal orbit, melt level changes and camera angle variations.

대표청구항 ▼

[ What is claimed is:] [1.] A method of measuring the diameter of a crystal pulled from a melt comprising the steps of:orienting a first detector to sight said first detector at a first meniscus point where the crystal emerges from the melt;orienting a second detector to sight said second detector a

[ What is claimed is:] [1.] A method of measuring the diameter of a crystal pulled from a melt comprising the steps of:orienting a first detector to sight said first detector at a first meniscus point where the crystal emerges from the melt;orienting a second detector to sight said second detector at a second meniscus point diametrically opposite said first meniscus point;determining the spacing between said first and second meniscus points from the orientations of said first and second detectors, said spacing being equal to the crystal diameter.