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특허 상세정보

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Device and a method for epitaxially growing objects by CVD

특허상세정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) C23C-016/44   
미국특허분류(USC) 427/248.1 ; 117/089 ; 117/093 ; 117/095 ; 117/102 ; 427/255.1
출원번호 US-0917178 (1997-08-25)
발명자 / 주소
출원인 / 주소
대리인 / 주소
    Pollock, Vande Sande & Amernick
인용정보 피인용 횟수 : 17  인용 특허 : 15
초록

A method for epitaxially growing objects of SiC, a Group III-nitride or alloys thereof by Chemical Vapor Deposition on a substrate received in a susceptor having circumferential walls, the method comprises heating the circumferential susceptor walls, and thereby the substrate and a gas mixture led to the substrate for the growth, above a temperature level at which sublimination of the material grown starts to considerably increase, and feeding the gas mixture into the susceptor with a composition and at a rate that ensures a positive growth.

대표
청구항
▼

[ We claim:] [1.] A method for epitaxially growing objects of SiC, a Group III-nitride or alloys thereof by Chemical Vapor Deposition on a substrate received in a susceptor having circumferential walls, said method comprising the steps of:heating said circumferential susceptor walls and thereby the substrate and a gas mixture led to the substrate for the growth above a temperature level at which sublimination of the material grown starts to considerably increase, and feeding said gas mixture into the susceptor with a composition and at a rate that ensure...

이 특허에 인용된 특허 (15)

  1. Wilson Herbert L. (Woodbridge VA) Guiterrez William A. (Woodbridge VA). Apparatus for producing high quality epitaxially grown semiconductors. USP1987104699084.
  2. Goela Jitendra S. (Andover MA) Burns Lee E. (Woburn MA) Taylor Raymond L. (Saugus MA). Chemical vapor deposition-produced silicon carbide having improved properties. USP1997025604151.
  3. Blair David W. (Princeton NJ). Efficient high temperature radiant furnace. USP1990044914276.
  4. Knippenberg Wilhelmus Franciscus (Eindhoven NL) Verspui Gerrit (Eindhoven NL). Filamentary silicon carbide crystals by VLS growth in molten iron. USP1977034013503.
  5. Hansen Keith J. (San Jose CA). Filtering technique for CVD chamber process gases. USP1997105681613.
  6. Hansen Keith J.. Gas control technique for limiting surging of gas into a CVD chamber. USP1998125853804.
  7. Stringfellow Gerald B. (Palo Alto CA) Hall ; Jr. Howard T. (Palo Alto CA). Method for vapor epitaxial deposition of III/V materials utilizing organometallic compounds and a halogen or halide in a. USP1979044147571.
  8. Furukawa Katsuki (Sakai JPX) Tajima Yoshimitsu (Nara JPX) Suzuki Akira (Nara JPX). Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal. USP1995075433167.
  9. Shuskus Alexander J. (West Hartford CT) Cowher Melvyn E. (East Brookfield MA). Plasma enhanced deposition of semiconductors. USP1983124421592.
  10. Narasimhan Krishnan (Southfield MI) Bhat Deepak G. (Troy MI). Process for producing single crystal titanium carbide whiskers. USP1992035094711.
  11. Ban Vladimir S. (Hopewell NJ). Radiation heated reactor for chemical vapor deposition on substrates. USP1981044263872.
  12. Ohashi Toshiyasu (Annaka JPX) Kubota Yoshihiro (Takasaki JPX) Harada Kesazi (Takasaki JPX) Satoh Takesi (Annaka JPX). Silicon carbide film forming apparatus. USP1993065221355.
  13. Takahaski Jun (Sagamihara JPX) Kanaya Masatoshi (Sagamihara JPX). Sublimation growth of single crystal SiC. USP1995085441011.
  14. Davis Robert F. (Raleigh NC) Carter ; Jr. Calvin H. (Raleigh NC) Hunter Charles E. (Durham NC). Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide. USP1989094866005.
  15. Barale Gilbert (Roquettes FRX) Izard Jean-Claude (Verdun s/ Garonne FRX) Rizzetto Francois (Fontenilles FRX) Couderc Jean-Pierre (Toulouse FRX) Gachen Christian (Toulouse FRX) Morancho Roland (Toulou. Surface deposition or surface treatment reactor. USP1992065125359.

이 특허를 인용한 특허 피인용횟수: 17

  1. Sumakeris, Joseph John; Paisley, Michael James; O'Loughlin, Michael John. Deposition systems and susceptor assemblies for depositing a film on a substrate. USP2013048430960.
  2. Sumakeris, Joseph John; Paisley, Michael James; O'Loughlin, Michael John. Directed reagents to improve material uniformity. USP2011118052794.
  3. Sugiyama,Naohiro; Kitou,Yasuo; Makino,Emi; Hara,Kazukuni; Futatsuyama,Kouki; Okamoto,Atsuto. Equipment and method for manufacturing silicon carbide single crystal. USP2007057217323.
  4. Paisley, Michael James; Sumakeris, Joseph John. Gas driven planetary rotation apparatus and methods for forming silicon carbide layers. USP2004096797069.
  5. Paisley, Michael; Sumakeris, Joseph John; Kordina, Olle. Gas-driven rotation apparatus and method for forming silicon carbide layers. USP2003056569250.
  6. Motakef,Shariar; Worlikar,Aniruddha S.. High-purity crystal growth. USP2008057377977.
  7. Motakef,Shariar; Worlikar,Aniruddha S.. High-purity crystal growth. USP2006057052546.
  8. Sumakeris,Joseph John; Paisley,Michael James. Housing assembly for an induction heating device including liner or susceptor coating. USP2008067390367.
  9. Sumakeris, Joseph John; Paisley, Michael James. Induction heating devices and methods for controllably heating an article. USP2005056896738.
  10. Futatsuyama,Kouki; Kitou,Yasuo. Manufacturing equipment of SiC single crystal and method for manufacturing SiC single crystal. USP2008017314523.
  11. Hara,Kazukuni; Nagakubo,Masao; Onda,Shoichi. Manufacturing method for producing silicon carbide crystal using source gases. USP2006097112242.
  12. Hara, Kazukuni; Nagakubo, Masao; Onda, Shoichi. Manufacturing method for producing silicon carbide crystal using source gases and apparatus for the same. USP2004126830618.
  13. Hara, Kazukuni; Nagakubo, Masao; Onda, Shoichi. Manufacturing method for producing silicon carbide crystal using source gases and apparatus for the same. USP2004086770137.
  14. Kolbo, Philip A.. Method for transferring a dye sublimation ink image onto an elastomeric substrate. USP2009057531481.
  15. Sumakeris, Joseph John; Paisley, Michael James. Methods for controllably induction heating an article. USP2015109155131.
  16. Sumakeris,Joseph John; Paisley,Michael James; O'Loughlin,Michael John. Methods for controlling formation of deposits in a deposition system and deposition methods including the same. USP2006107118781.
  17. Sumakeris, Joseph John; Hobgood, Hudson McDonald; Paisley, Michael James; Jenny, Jason Ronald; Carter, Jr., Calvin H.; Tsvetkov, Valeri Fedorovich. Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby. USP2005126974720.

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