초록 ▼

A method for epitaxially growing objects of SiC, a Group III-nitride or alloys thereof by Chemical Vapor Deposition on a substrate received in a susceptor having circumferential walls, the method comprises heating the circumferential susceptor walls, and thereby the substrate and a gas mixture led t

A method for epitaxially growing objects of SiC, a Group III-nitride or alloys thereof by Chemical Vapor Deposition on a substrate received in a susceptor having circumferential walls, the method comprises heating the circumferential susceptor walls, and thereby the substrate and a gas mixture led to the substrate for the growth, above a temperature level at which sublimination of the material grown starts to considerably increase, and feeding the gas mixture into the susceptor with a composition and at a rate that ensures a positive growth.

대표청구항 ▼

[ We claim:] [1.] A method for epitaxially growing objects of SiC, a Group III-nitride or alloys thereof by Chemical Vapor Deposition on a substrate received in a susceptor having circumferential walls, said method comprising the steps of:heating said circumferential susceptor walls and thereby the

[ We claim:] [1.] A method for epitaxially growing objects of SiC, a Group III-nitride or alloys thereof by Chemical Vapor Deposition on a substrate received in a susceptor having circumferential walls, said method comprising the steps of:heating said circumferential susceptor walls and thereby the substrate and a gas mixture led to the substrate for the growth above a temperature level at which sublimination of the material grown starts to considerably increase, and feeding said gas mixture into the susceptor with a composition and at a rate that ensures a positive growth.