[특허]Device for epitaxially growing objects and method for such a growth

[미국특허] Device for epitaxially growing objects and method for such a growth 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	C23C-016/00 C30B-029/36
출원번호	US-0959191 (1997-10-28)
발명자 / 주소	Ellison Alex,SEX Kordina Olle,SEX Gu Chun-Yuan,SEX Hallin Christer,SEX Janzen Erik,SEX Tuominen Marko,SEX
출원인 / 주소	Okmetic Ltd., FIX
대리인 / 주소	Pollock, Vande Sande & Amernick
인용정보	피인용 횟수 : 28 인용 특허 : 13

초록 ▼

A device for epitaxially growing objects of for instance SiC by Chemical Vapor Deposition on a substrate has a first conduit (24) arranged to conduct substantially only a carrier gas to a room (18) receiving the substrate and a second conduit (25) received in the first conduit, having a smaller cross-section than the first conduit and extending in the longitudinal direction of the first conduit with a circumferential space separating it from inner walls of the first conduit. The second conduit is adapted to conduct substantially the entire flow of reactive gases and it ends as seen in the direction of the flows, and emerges into the first conduit at a distance from said room.

대표청구항 ▼

[ What is claimed is:] [1.] A device for epitaxially growing objects on a substrate by chemical vapor deposition, the device comprising:a susceptor having circumferential walls surrounding a room which receives said substrate;a feeder for providing a flow of at least a carrier gas and a reactive gas into said susceptor and including:a first conduit emerging into said room; anda second conduit received in said first conduit, said second conduit having a smaller cross-section than said first conduit and extending in a longitudinal direction of said first conduit with a circumferential space separating said second conduit from inner walls of said first conduit, said first conduit conducting substantially only a carrier gas and said second conduit conducting only substantially reactive gases, said second conduit ending in said first conduit at a distance from said room, said first conduit having an enlarged cross-section in a region where said second conduit ends which decreases in the direction of said room;a heater for heating said circumferential walls and thereby heating said substrate and said reactive gasses above a temperature level from which said reactive gases decompose on said substrate.

이 특허에 인용된 특허 (13) 인용/피인용 타임라인 분석

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Ishihara Shunichi (Ebina JPX) Hanna Jun-ichi (Yokohama JPX) Shimizu Isamu (Yokohama JPX) Hirooka Masaaki (Toride JPX), Apparatus for forming deposited film.
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Kordina Olle,SEX ; Hallin Christer,SEX ; Janzen Erik,SEX, Device and a method for epitaxially growing objects by CVD.
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Baumberger Otto (Carouge CHX) Kalbskopf Reinhard (Vordenwald CHX), Device for depositing a mineral oxide coating on a substrate.
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Schmidt Bryan D. (San Antonio TX), Method and apparatus for thermally insulating a wafer support.
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Stringfellow Gerald B. (Palo Alto CA) Hall ; Jr. Howard T. (Palo Alto CA), Method for vapor epitaxial deposition of III/V materials utilizing organometallic compounds and a halogen or halide in a.
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Frijlink Peter M. (Crosne FRX), Method of manufacturing a semiconductor device by vapor phase deposition using multiple inlet flow control.
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Schmitt ; III Jerome J. (New Haven CT) Halpern Bret L. (Bethany CT), Microwave plasma assisted supersonic gas jet deposition of thin film materials.
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Hirooka Masaaki (Toride JPX) Ishihara Shunichi (Ebina JPX) Hanna Junichi (Yokohama JPX) Shimizu Isamu (Yokohama JPX), Process for the preparation of image-reading photosensor.
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Ogura Mototsugu (Nara JPX) Ban Yuzaburoh (Osaka JPX) Hase Nobuyasu (Hyogo JPX), Process of vapor phase epitaxy of compound semiconductors.
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Davis Robert F. (Raleigh NC) Carter ; Jr. Calvin H. (Raleigh NC) Hunter Charles E. (Durham NC), Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide.
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Wang David N. (Cupertino) White John M. (Hayward) Law Kam S. (Union City) Leung Cissy (Union City) Umotoy Salvador P. (Pittsburg) Collins Kenneth S. (San Jose) Adamik John A. (San Ramon) Perlov Ilya , Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planar.
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Mikoshiba Nobuo (30-18 ; Yagiyama-Honcho 2-chome Sendai-shi ; Miyagi-ken JPX) Tsubouchi Kazuo (30-38 ; Hitokita 2-chome Sendai-shi ; Miyagi-ken JPX), Thin film forming apparatus.
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이 특허를 인용한 특허 (28) 인용/피인용 타임라인 분석

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Käppeler, Johannes; Wischmeyer, Frank; Berge, Rune, CVD reactor with substrate holder which is rotatably driven and mounted by a gas stream.
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Sumakeris, Joseph John; Paisley, Michael James; O'Loughlin, Michael John, Deposition systems and susceptor assemblies for depositing a film on a substrate.
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Janz��n,Erik; R��back,Peter; Ellison,Alexandre, Device and method for producing single crystals by vapor deposition.
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J？rgensen,Holger; Strauch,Gerhard Karl; K？ppeler,Johannes, Device and method for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates.
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Sumakeris, Joseph John; Paisley, Michael James; O'Loughlin, Michael John, Directed reagents to improve material uniformity.
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Kordina,Olof Claes Erik, Dissociation of silicon clusters in a gas phase during chemical vapor deposition homo-epitaxial growth of silicon carbide.
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Osborne, E. Wayne; Spangler, Michael V.; Allen, Levi C.; Geertsen, Robert J.; Ege, Paul E.; Stupin, Walter J.; Zeininger, Gerald, Fluid bed reactor.
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Osborne, E. Wayne; Spangler, Michael V.; Allen, Levi C.; Geertsen, Robert J.; Ege, Paul E.; Stupin, Walter J.; Zeininger, Gerald, Fluid bed reactor.
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Madar, Roland; Pons, Michel; Baillet, Francis; Charpentier, Ludovic; Pernot, Etienne; Chaussende, Didier; Turover, Daniel, Formation of single-crystal silicon carbide.
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Paisley, Michael James; Sumakeris, Joseph John, Gas driven planetary rotation apparatus and methods for forming silicon carbide layers.
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Saxler, Adam William, Gas driven rotation apparatus and method for forming crystalline layers.
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Strauch,Gerd; Kaeppeler,Johannes; Dauelsberg,Martin, Gas-admission element for CVD processes, and device.
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Paisley, Michael; Sumakeris, Joseph John; Kordina, Olle, Gas-driven rotation apparatus and method for forming silicon carbide layers.
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Motakef,Shariar; Worlikar,Aniruddha S., High-purity crystal growth.
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Motakef,Shariar; Worlikar,Aniruddha S., High-purity crystal growth.
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Sumakeris,Joseph John; Paisley,Michael James, Housing assembly for an induction heating device including liner or susceptor coating.
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Sumakeris, Joseph John; Paisley, Michael James, Induction heating devices and methods for controllably heating an article.
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Hara,Kazukuni; Nagakubo,Masao; Onda,Shoichi, Manufacturing method for producing silicon carbide crystal using source gases.
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Hara, Kazukuni; Nagakubo, Masao; Onda, Shoichi, Manufacturing method for producing silicon carbide crystal using source gases and apparatus for the same.
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Hara, Kazukuni; Nagakubo, Masao; Onda, Shoichi, Manufacturing method for producing silicon carbide crystal using source gases and apparatus for the same.
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Sumakeris, Joseph John; Paisley, Michael James, Methods for controllably induction heating an article.
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Sumakeris,Joseph John; Paisley,Michael James; O'Loughlin,Michael John, Methods for controlling formation of deposits in a deposition system and deposition methods including the same.
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Sumakeris, Joseph John; Hobgood, Hudson McDonald; Paisley, Michael James; Jenny, Jason Ronald; Carter, Jr., Calvin H.; Tsvetkov, Valeri Fedorovich, Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby.
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Kordina,Olof Claes Erik, Phase controlled sublimation.
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Rudolph James Warren, Sealed reactant gas inlet for a CVI/CVD furnace.
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Nagakubo, Masao; Hirose, Fusao; Kitoh, Yasuo, Silicon carbide manufacturing device and method of manufacturing silicon carbide.
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Kordina, Olof Claes Erik, Sublimation chamber for phase controlled sublimation.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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[미국특허] Device for epitaxially growing objects and method for such a growth 원문보기