초록 ▼

This invention provides a silicon nitride circuit board in which a metal circuit plate is bonded to a high thermal conductive silicon nitride substrate having a thermal conductivity of not less than 60 W/m K, wherein a thickness D.sub.S of the high thermal conductive silicon nitride substrate and a

This invention provides a silicon nitride circuit board in which a metal circuit plate is bonded to a high thermal conductive silicon nitride substrate having a thermal conductivity of not less than 60 W/m K, wherein a thickness D.sub.S of the high thermal conductive silicon nitride substrate and a thickness D.sub.M of the metal circuit plate satisfy a relational formula D.sub.S .ltoreq.2D.sub.M. The silicon nitride circuit board is characterized in that, when a load acts on the central portion of the circuit board which is held at a support interval of 50 mm, a maximum deflection is not less than 0.6 mm until the silicon nitride substrate is broken. The silicon nitride circuit board is characterized in that, when an anti-breaking test is performed to the circuit board which is held at a support interval of 50 mm, an anti-breaking strength is not less than 500 MPa. The metal circuit plate or a circuit layer are integrally bonded on the silicon nitride substrate by a direct bonding method, an active metal brazing method, or an metalize method. According to the silicon nitride circuit board with the above arrangement, high thermal conductivity and excellent heat radiation characteristics can be obtained, and heat cycle resistance characteristics can be considerably improved.

대표청구항 ▼

[ What is claimed is:] [1.] A silicon nitride circuit board comprising:a high thermal conductive silicon nitride substrate including a silicon nitride crystal phase and a grain boundary phase, having a ratio of a crystallized compound phase to an overall grain boundary phase which is at least 20%, a

[ What is claimed is:] [1.] A silicon nitride circuit board comprising:a high thermal conductive silicon nitride substrate including a silicon nitride crystal phase and a grain boundary phase, having a ratio of a crystallized compound phase to an overall grain boundary phase which is at least 20%, and having a thermal conductivity of at least 60 W/m K;a first oxide layer having a thickness of 0.5 to 10 .mu.m, which is formed on a surface of said silicon nitride substrate; anda metal circuit plate directly bonded to said silicon nitride substrate through said oxide layer.