초록 ▼

The present invention generally provides a target structure that allows uniform erosion and efficient utilization of a sputterable material while reducing particle generation caused by backscatter deposition. The target has an annular region comprised of sputterable material and a central region con

The present invention generally provides a target structure that allows uniform erosion and efficient utilization of a sputterable material while reducing particle generation caused by backscatter deposition. The target has an annular region comprised of sputterable material and a central region configured to receive direct deposition rather than backscatter deposition. The annular region of the target provides an exposed surface that is generally concave, but is preferably substantially frustoconical. The central region of the target provides an exposed surface having a configuration that is either substantially planar or convex, but is preferably substantially convex frustoconical.

대표청구항 ▼

[ What is claimed is:] [1.] A target for a physical vapor deposition system, comprising:a backing plate having an annular region and a central region, the central region having a substantially convex exposed collection surface; anda sputterable material disposed on the annular region of the backing

[ What is claimed is:] [1.] A target for a physical vapor deposition system, comprising:a backing plate having an annular region and a central region, the central region having a substantially convex exposed collection surface; anda sputterable material disposed on the annular region of the backing plate.