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[미국특허] Apparatus for optical inspection of wafers during polishing 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B24B-049/00
출원번호 US-0497382 (1995-06-29)
우선권정보 IL-0113829 (1995-05-23)
발명자 / 주소
  • Dvir Eran,ILX
  • Haimovich Eli,ILX
  • Shulman Benjamin,ILX
출원인 / 주소
  • Nova Measuring Instruments, Ltd., ILX
대리인 / 주소
    Skjerven, Morrill, MacPherson, Franklin and Friel LLP
인용정보 피인용 횟수 : 64  인용 특허 : 10

초록

An optical system is disclosed for the inspection of wafers during polishing which also includes a measurement system for measuring the thickness of the wafer's top layer. The optical system views the wafer through a window and includes a gripping system, which places the wafer in a predetermined vi

대표청구항

[ We claim:] [1.] A thickness measuring unit for mounting on a water track of a polisher for measuring the thickness of a top layer of a wafer, said thickness measuring unit comprising:a. a curved gate having a radius of curvature generally similar to that of said wafer, said curved gate being locat

이 특허에 인용된 특허 (10) 인용/피인용 타임라인 분석

  1. Yu Chris C. (Boise ID) Sandhu Gurtej S. (Boise ID), Chemical mechanical planarization (CMP) of a semiconductor wafer using acoustical waves for in-situ end point detection.
  2. Burke Peter A. (Austin TX) Freeman Eric H. (Underhill Center VT) Ross Gilbert H. (Burlington VT), Chemical-mechanical polishing tool with end point measurement station.
  3. Kaanta Carter W. (Colchester VT) Leach Michael A. (Bristol VT), In situ conductivity monitoring technique for chemical/mechanical planarization endpoint detection.
  4. Miller Gabriel L. (Westfield NJ) Wagner Eric R. (South Plainfield NJ), In situ monitoring technique and apparatus for chemical/mechanical planarization endpoint detection.
  5. Lustig Naftali E. (Croton-on-Hudson NY) Saenger Katherine L. (Ossining NY) Tong Ho-Ming (Yorktown Heights NY), In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing.
  6. Lustig Naftali E. (Croton on Hudson NY) Feenstra Randall M. (Mt. Kisco NY) Guthrie William L. (Hopewell Junction NY), In-situ endpoint detection method and apparatus for chemical-mechanical polishing using low amplitude input voltage.
  7. Sato Hidemi (Yokohama JPX) Hira Yasuo (Yokohama JPX) Fukushima Atsuko (Yokohama JPX) Asao Hiroshi (Yokohama JPX) Kawamoto Kazumi (Yokohama JPX) Ito Kenchi (Yokohama JPX) Funatsu Ryuichi (Yokohama JPX, Method and apparatus for measuring optical constants of a thin film as well as method and apparatus for fabricating a th.
  8. Schultz Laurence D. (Boise ID), Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer.
  9. Hashimoto Hiromasa (Fukushima JPX), Method for preparing a semiconductor wafer.
  10. Singer Barry M. (New York NY) Lalak Joseph J. (Briarcliff Manor NY), Method of reducing the thickness of a wafer of fragile material.

이 특허를 인용한 특허 (64) 인용/피인용 타임라인 분석

  1. Keith W Quick ; Stephen J Duey, Apparatus and method for handling an integrated circuit.
  2. Keith W Quick ; Stephen J Duey, Apparatus and method for handling an integrated circuit.
  3. Yoshijiro Ushio JP; Takehiko Ueda JP; Eiji Matsukawa JP; Motoo Koyama JP, Apparatus and methods for detecting thickness of a patterned layer.
  4. Eran Dvir IL; Moshe Finarov IL; Eli Haimovich ; Benjamin Shulman IL; Rony Abaron IL, Apparatus for optical inspection of wafers during polishing.
  5. Finarov,Moshe, Apparatus for optical inspection of wafers during processing.
  6. Weber-Grabau, Michael; Anguelov, Ivelin A.; Tong, Edric H.; Norton, Adam E.; Stanke, Fred E.; Hyatt, Badru D., Bathless wafer measurement apparatus and method.
  7. Ausschnitt, Christopher, Differential critical dimension and overlay metrology apparatus and measurement method.
  8. Ausschnitt, Christopher, Differential critical dimension and overlay metrology apparatus and measurement method.
  9. Finarov Moshe,ILX ; Scheiner David,ILX ; Ravid Avi,ILX, Method and apparatus for monitoring a chemical mechanical planarization process applied to metal-based patterned objects.
  10. Finarov, Moshe; Scheiner, David; Ravid, Avi, Method and apparatus for monitoring a chemical mechanical planarization process applied to metal-based patterned objects.
  11. De Jong, Hendrik Jan; Wieland, Marco Jan-Jaco, Method and arrangement for handling and processing substrates.
  12. Finarov, Moshe; Brill, Boaz, Method and system for measuring patterned structures.
  13. Finarov, Moshe; Brill, Boaz, Method and system for measuring patterned structures.
  14. Finarov, Moshe; Brill, Boaz, Method and system for measuring patterned structures.
  15. Finarov, Moshe; Brill, Boaz, Method and system for measuring patterned structures.
  16. Finarov, Moshe; Brill, Boaz, Method and system for measuring patterned structures.
  17. Finarov, Moshe; Brill, Boaz, Method and system for measuring patterned structures.
  18. Finarov, Moshe; Brill, Boaz, Method and system for measuring patterned structures.
  19. Finarov, Moshe; Brill, Boaz, Method and system for measuring patterned structures.
  20. Finarov, Moshe; Brill, Boaz, Method and system for measuring patterned structures.
  21. Finarov, Moshe; Brill, Boaz, Method and system for measuring patterned structures.
  22. Finarov, Moshe; Brill, Boaz, Method and system for measuring patterned structures.
  23. Finarov,Moshe; Brill,Boaz, Method and system for measuring patterned structures.
  24. Finarov,Moshe; Brill,Boaz, Method and system for measuring patterned structures.
  25. De Jong, Hendrik Jan; Wieland, Marco Jan-Jaco, Method of clamping a substrate and clamp preparation unit using capillary clamping force.
  26. Lehman,Kurt; Chen,Charles; Allen,Ronald L.; Shinagawa,Robert; Sethuraman,Anantha; Bevis,Christopher F.; Trikas,Thanassis; Chen,Haiguang; Meng,Ching Ling, Methods and systems for detecting a presence of blobs on a specimen during a polishing process.
  27. Fielden, John; Levy, Ady; Brown, Kyle A.; Bultman, Gary; Nikoonahad, Mehrdad; Wack, Dan, Methods and systems for determining a characteristic of a layer formed on a specimen by a deposition process.
  28. Nikoonahad, Mehrdad; Levy, Ady; Brown, Kyle A.; Bultman, Gary; Wack, Dan; Fielden, John, Methods and systems for determining a characteristic of a specimen prior to, during, or subsequent to ion implantation.
  29. Lehman,Kurt; Chen,Charles; Allen,Ronald L.; Shinagawa,Robert; Sethuraman,Anantha; Bevis,Christopher F.; Trikas,Thanassis; Chen,Haiguang; Meng,Ching Ling, Methods and systems for determining a characteristic of polishing within a zone on a specimen from combined output signals of an eddy current device.
  30. Fielden,John; Levy,Ady; Brown,Kyle A.; Bultman,Gary; Nikoonahad,Mehrdad; Wack,Dan, Methods and systems for determining a composition and a thickness of a specimen.
  31. Wack, Dan; Levy, Ady; Brown, Kyle A.; Bultman, Gary; Nikoonahad, Mehrdad; Fielden, John, Methods and systems for determining a critical dimension an a presence of defects on a specimen.
  32. Nikoonahad, Mehrdad; Levy, Ady; Brown, Kyle A.; Bultman, Gary; Wack, Dan; Fielden, John, Methods and systems for determining a critical dimension and a thin film characteristic of a specimen.
  33. Levy, Ady; Brown, Kyle A.; Bultman, Gary; Nikoonahad, Mehrdad; Wack, Dan; Fielden, John, Methods and systems for determining a critical dimension and overlay of a specimen.
  34. Levy, Ady; Brown, Kyle A.; Smedt, Rodney; Bultman, Gary; Nikoonahad, Mehrdad; Wack, Dan; Fielden, John; Abdul-Halim, Ibrahim, Methods and systems for determining a critical dimension and overlay of a specimen.
  35. Levy, Ady; Brown, Kyle A.; Smedt, Rodney; Bultman, Gary; Nikoonahad, Mehrdad; Wack, Dan; Fielden, John; Abdul-Halim, Ibrahim, Methods and systems for determining a critical dimension and overlay of a specimen.
  36. Levy, Ady; Brown, Kyle A.; Smedt, Rodney; Bultman, Gary; Nikoonahad, Mehrdad; Wack, Dan; Fielden, John; Abdulhalim, Ibrahim, Methods and systems for determining a critical dimension and overlay of a specimen.
  37. Nikoonahad, Mehrdad; Levy, Ady; Brown, Kyle A.; Bultman, Gary; Wack, Dan; Fielden, John, Methods and systems for determining a critical dimension, a presence of defects, and a thin film characteristic of a specimen.
  38. Bultman,Gary; Levy,Ady; Brown,Kyle A.; Nikoonahad,Mehrdad; Wack,Dan; Fielden,John, Methods and systems for determining a presence of defects and a thin film characteristic of a specimen.
  39. Bultman, Gary; Levy, Ady; Brown, Kyle A.; Nikoonahad, Mehrdad; Wack, Dan; Fielden, John, Methods and systems for determining a presence of macro and micro defects on a specimen.
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  41. Wack, Dan; Levy, Ady; Brown, Kyle A.; Bultman, Gary; Nikoonahad, Mehrdad; Fielden, John, Methods and systems for determining a presence of macro defects and overlay of a specimen.
  42. Wack, Dan; Levy, Ady; Brown, Kyle A.; Bultman, Gary; Nikoonahad, Mehrdad; Fielden, John, Methods and systems for determining a presence of macro defects and overlay of a specimen.
  43. Levy, Ady; Brown, Kyle A.; Bultman, Gary; Nikoonahad, Mehrdad; Wack, Dan; Fielden, John, Methods and systems for determining a property of a specimen prior to, during, or subsequent to an etch process.
  44. Wack,Dan; Levy,Ady; Brown,Kyle A.; Bultman,Gary; Nikoonahad,Mehrdad; Fielden,John, Methods and systems for determining a property of a specimen prior to, during, or subsequent to lithography.
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  51. Fielden, John; Levy, Ady; Brown, Kyle A.; Bultman, Gary; Nikoonahad, Mehrdad; Wack, Dan, Methods and systems for determining flatness, a presence of defects, and a thin film characteristic of a specimen.
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  54. Lehman, Kurt; Chen, Charles; Allen, Ronald L.; Shinagawa, Robert; Sethuraman, Anantha; Bevis, Christopher F.; Trikas, Thanassis; Chen, Haiguang; Meng, Ching Ling, Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, or a characteristic of a polishing pad or tool.
  55. Lehman, Kurt; Chen, Charles; Allen, Ronald L.; Shinagawa, Robert; Sethuraman, Anantha; Bevis, Christopher F.; Trikas, Thanassis; Chen, Haiguang; Meng, Ching Ling, Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, or a characteristic of a polishing pad or tool.
  56. Lehman,Kurt; Chen,Charles; Allen,Ronald L.; Shinagawa,Robert; Sethuraman,Anantha; Bevis,Christopher F.; Trikas,Thanassis; Chen,Haiguang; Meng,Ching Ling, Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, or a characteristic of a polishing pad or tool.
  57. Lehman,Kurt; Chen,Charles; Allen,Ronald L.; Shinagawa,Robert; Sethuraman,Anantha; Bevis,Christopher F.; Trikas,Thanassis; Chen,Haiguang; Meng,Ching Ling, Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, or a characteristic of a polishing pad or tool.
  58. Sevilla, Roland K; Hicks, James A.; Jones, Jeremy, Polishing disk with end-point detection port.
  59. Lehman, Kurt; Chen, Charles; Allen, Ronald L.; Shinagawa, Robert; Sethuraman, Anantha; Bevis, Christopher F.; Trikas, Thanassis; Chen, Haiguang; Meng, Ching Ling, Systems and methods for characterizing a polishing process.
  60. Cohen, Yoel; Finarov, Moshe; Vinokur, Klara, Thin films measurement method and system.
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