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Growth of bulk single crystals of aluminum nitride 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C30B-023/00
출원번호 US-0111413 (1998-07-07)
발명자 / 주소
  • Hunter Charles Eric
출원인 / 주소
  • Cree, Inc.
대리인 / 주소
    Faust
인용정보 피인용 횟수 : 46  인용 특허 : 15

초록

Bulk, low impurity aluminum nitride (AlN) single crystals are grown by sublimation or similar deposition techniques at growth rates greater than 0.1 mm/hr.

대표청구항

[ That which is claimed is:] [1.] A method of producing bulk single crystals of AlN at enhanced growth rates comprising:growing AlN by depositing vapor species containing Al and N on the growth surface of a seed crystal; whileproviding effusion of the growing crystal interface sufficient to grow AlN

이 특허에 인용된 특허 (15)

  1. Jasinski Thomas J. (Medford MA) Witt August F. (Winchester MA), Apparatus for growing crystals.
  2. Rutz, Richard F., Epitaxial crystal fabrication of SiC:AlN.
  3. Hunter Charles Eric, Growth of bulk single crystals of aluminum nitride.
  4. Schetzina Jan Frederick (Cary NC), Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitrid.
  5. Suzuki Akira (Nara JPX) Furukawa Katsuki (Sakai JPX) Shigeta Mitsuhiro (Joyo JPX) Fujii Yoshihisa (Nara JPX), Light emitting diode.
  6. Vodakov Jury A. (prospekt Engelsa ; 69/1 ; kv. 35 Leningrad SU) Mokhov Evgeny N. (prospekt Energetikov ; 54 ; korpus 2 ; kv. 59 Leningrad SU), Method for epitaxial production of semiconductor silicon carbide utilizing a close-space sublimation deposition techniqu.
  7. Chyi Jen-Inn (3F ; No. 38 ; Lane 8 ; Gao-Shuang Road Ping-Chen ; Taoyuan Hsien TWX), Method for the growth of nitride based semiconductors and its apparatus.
  8. Suzuki Akira (Nara JPX) Furukawa Katsuki (Sakai JPX) Shigeta Mitsuhiro (Tenri JPX), Method of fabricating single-crystal substrates of silicon carbide.
  9. Nii Keita (Kyoto JPX), Method of manufacturing a hetero-junction bi-polar transistor.
  10. Furukawa Katsuki (Sakai JPX) Tajima Yoshimitsu (Nara JPX) Suzuki Akira (Nara JPX), Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal.
  11. Kim Sung C. (Boise ID) Yu Chris C. (Boise ID) Doan Trung T. (Boise ID), Process for depositing aluminum nitride (AlN) using nitrogen plasma sputtering.
  12. Rutz Richard F. (Cold Spring NY), Process for producing electronic grade aluminum nitride films utilizing the reduction of aluminum oxide.
  13. Streetman, Ben G.; Mattord, Terry J.; Kesan, Vijay P.; Treetman, Ben G.; Mattord, Terry, Refractory effusion cell to generate a reproducible, uniform and ultra-pure molecular beam of elemental molecules, utilizing reduced thermal gradient filament construction.
  14. Rutz Richard F. (Cold Spring NY), Structure containing epitaxial crystals on a substrate.
  15. Davis Robert F. (Raleigh NC) Carter ; Jr. Calvin H. (Raleigh NC) Hunter Charles E. (Durham NC), Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide.

이 특허를 인용한 특허 (46)

  1. Schujman, Sandra B.; Rao, Shailaja P.; Bondokov, Robert T.; Morgan, Kenneth E.; Slack, Glen A.; Schowalter, Leo J., Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them.
  2. Schujman, Sandra B.; Rao, Shailaja P.; Bondokov, Robert T.; Morgan, Kenneth E.; Slack, Glen A.; Schowalter, Leo J., Aluminum nitride bulk crystals having high transparency to untraviolet light and methods of forming them.
  3. Katou, Tomohisa; Nagai, Ichirou; Miura, Tomonori; Kamata, Hiroyuki, Apparatus for manufacturing aluminum nitride single crystal, method for manufacturing aluminum nitride single crystal, and aluminum nitride single crystal.
  4. Hunter Charles Eric, Bulk single crystals of aluminum nitride.
  5. Slack, Glen A.; Schujman, Sandra B., Deep-eutectic melt growth of nitride crystals.
  6. Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo J.; Slack, Glen A., Defect reduction in seeded aluminum nitride crystal growth.
  7. Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo J.; Slack, Glen A., Defect reduction in seeded aluminum nitride crystal growth.
  8. Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo J.; Stack, Glen A., Defect reduction in seeded aluminum nitride crystal growth.
  9. Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo; Slack, Glen A., Defect reduction in seeded aluminum nitride crystal growth.
  10. Bondokov, Robert T.; Schowalter, Leo J.; Morgan, Kenneth; Slack, Glen A.; Rao, Shailaja P.; Gibb, Shawn Robert, Defect reduction in seeded aluminum nitride crystal growth.
  11. Slack, Glen A.; Schowalter, Leo J., Doped aluminum nitride crystals and methods of making them.
  12. Slack, Glen A.; Schowalter, Leo J., Doped aluminum nitride crystals and methods of making them.
  13. Slack, Glen A.; Schowalter, Leo J., Doped aluminum nitride crystals and methods of making them.
  14. Edmond, John Adam; Doverspike, Kathleen Marie; Kong, Hua-shuang; Bergmann, Michael John, Group III nitride LED with undoped cladding layer.
  15. Edmond, John Adam; Doverspike, Kathleen Marie; Kong, Hua-shuang; Bergmann, Michael John, Group III nitride LED with undoped cladding layer.
  16. Edmond, John Adam; Doverspike, Kathleen Marie; Kong, Hua-shuang; Bergmann, Michael John, Group III nitride LED with undoped cladding layer.
  17. Bondokov, Robert T.; Rao, Shailaja P.; Gibb, Shawn R.; Schowalter, Leo J., Growth of large aluminum nitride single crystals with thermal-gradient control.
  18. Bondokov, Robert T.; Rao, Shailaja P.; Gibb, Shawn Robert; Schowalter, Leo J., Growth of large aluminum nitride single crystals with thermal-gradient control.
  19. Koukitu, Akinori; Kumagai, Yoshinao; Nagashima, Toru; Kinoshita, Toru; Kubota, Yuki; Dalmau, Rafael F.; Xie, Jinqiao; Moody, Baxter F.; Schlesser, Raoul; Sitar, Zlatko, Highly transparent aluminum nitride single crystalline layers and devices made therefrom.
  20. Bondokov, Robert T.; Morgan, Kenneth; Slack, Glen A.; Schowalter, Leo J., Large aluminum nitride crystals with reduced defects and methods of making them.
  21. Bondokov, Robert; Morgan, Kenneth E.; Slack, Glen A.; Schowalter, Leo J., Large aluminum nitride crystals with reduced defects and methods of making them.
  22. Benvenuti, Giacomo; Halary-Wagner, Estelle; Amorosi, Simone; Hoffmann, Patrik, Large area deposition in high vacuum with high thickness uniformity.
  23. Cuomo, Jerome J.; Williams, N. Mark; Hanser, Andrew David; Carlson, Eric Porter; Thomas, Darin Taze, MIIIN based materials and methods and apparatus for producing same.
  24. Michael J. Manfra ; Loren N. Pfeiffer ; Kenneth W. West ; Yiu-Huen Wong, MOS transistor having aluminum nitride gate structure and method of manufacturing same.
  25. Wang, Shaoping, Method and apparatus for aluminum nitride monocrystal boule growth.
  26. Cuomo, Jerome J.; Williams, N. Mark; Hanser, Andrew David; Carlson, Eric Porter; Thomas, Darin Taze, Method and apparatus for producing MIIIN columns and MIIIN materials grown thereon.
  27. Schowalter, Leo J.; Slack, Glen A.; Rojo, J. Carlos, Method and apparatus for producing large, single-crystals of aluminum nitride.
  28. Schowalter, Leo J.; Slack, Glen A.; Rojo, J. Carlos, Method and apparatus for producing large, single-crystals of aluminum nitride.
  29. Schowalter, Leo J.; Slack, Glen A.; Rojo, J. Carlos, Method and apparatus for producing large, single-crystals of aluminum nitride.
  30. Schowalter, Leo J.; Slack, Glen A.; Rojo, J. Carlos; Bondokov, Robert T.; Morgan, Kenneth E.; Smart, Joseph A., Method and apparatus for producing large, single-crystals of aluminum nitride.
  31. Schowalter, Leo; Slack, Glen A.; Rojo, Juan Carlos; Bondokov, Robert T.; Morgan, Kenneth E.; Smart, Joseph A., Method and apparatus for producing large, single-crystals of aluminum nitride.
  32. Morgan, Kenneth E.; Schowalter, Leo J.; Slack, Glen A., Methods for controllable doping of aluminum nitride bulk crystals.
  33. Mueller, Stephan, Methods of fabricating silicon carbide crystals.
  34. Mueller,Stephan, Methods of fabricating silicon carbide crystals.
  35. Mueller,Stephan, Methods of fabricating silicon carbide crystals.
  36. Schowalter, Leo J.; Smart, Joseph A.; Liu, Shiwen; Morgan, Kenneth E.; Bondokov, Robert T.; Bettles, Timothy J.; Slack, Glen A., Nitride semiconductor heterostructures and related methods.
  37. Schowalter, Leo J.; Smart, Joseph A.; Liu, Shiwen; Morgan, Kenneth E.; Bondokov, Robert T.; Bettles, Timothy J.; Slack, Glen A., Nitride semiconductor heterostructures and related methods.
  38. Cuomo, Jerome J.; Williams, N. Mark, Non-thermionic sputter material transport device, methods of use, and materials produced thereby.
  39. Xie, Jinqiao; Moody, Baxter; Mita, Seiji, Optoelectronic devices incorporating single crystalline aluminum nitride substrate.
  40. Xie, Jinqiao; Moody, Baxter; Mita, Seiji, Optoelectronic devices incorporating single crystalline aluminum nitride substrate.
  41. Schowalter, Leo J.; Chen, Jianfeng; Grandusky, James R., Photon extraction from nitride ultraviolet light-emitting devices.
  42. Schowalter, Leo J.; Chen, Jianfeng; Grandusky, James R., Photon extraction from nitride ultraviolet light-emitting devices.
  43. Schowalter,Leo J.; Slack,Glen A., Powder metallurgy crucible for aluminum nitride crystal growth.
  44. Moody, Baxter; Mita, Seiji; Xie, Jinqiao, Power semiconductor devices incorporating single crystalline aluminum nitride substrate.
  45. Grandusky, James R.; Schowalter, Leo J.; Jamil, Muhammad; Mendrick, Mark C.; Gibb, Shawn R., Pseudomorphic electronic and optoelectronic devices having planar contacts.
  46. Schowalter, Leo J.; Smart, Joseph A.; Grandusky, James R.; Liu, Shiwen, Thick pseudomorphic nitride epitaxial layers.
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