초록 ▼

An insulating layer in a semiconductor device and a process for forming the insulating layer is described. The insulating layer comprises of a nitride layer over the substrate having a residual stress of between -8.times.10.sup.9 dynes/cm.sup.-2 and -3.times.10.sup.10 dynes/cm.sup.-2. The insulating

An insulating layer in a semiconductor device and a process for forming the insulating layer is described. The insulating layer comprises of a nitride layer over the substrate having a residual stress of between -8.times.10.sup.9 dynes/cm.sup.-2 and -3.times.10.sup.10 dynes/cm.sup.-2. The insulating layer can further comprise a doped oxide layer under the nitride layer and can further comprise an interlevel dielectric layer over the nitride layer. Moreover, the nitride layer can be formed by bringing the temperature in a chemical vapor deposition reactor to below 550 degrees Celsius, placing the substrate into the reactor at the temperature, and forming the nitride layer on the substrate. Alternatively, the nitride layer can be formed by pushing the substrate into a chemical vapor deposition reactor at a speed greater than 300 millimeters per minute, and forming the nitride layer on the substrate.

대표청구항 ▼

[ What is claimed is:] [1.] An insulating layer in a semiconductor device comprising:a doped oxide layer on a doped region of said semiconductor devices;a nitride film having a residual stress of between -8.times.10.sup.10 dynes/cm.sup.2 and 3.times.10.sup.10 dynes/cm.sup.2 formed on said doped oxid

[ What is claimed is:] [1.] An insulating layer in a semiconductor device comprising:a doped oxide layer on a doped region of said semiconductor devices;a nitride film having a residual stress of between -8.times.10.sup.10 dynes/cm.sup.2 and 3.times.10.sup.10 dynes/cm.sup.2 formed on said doped oxide layer; andan interlayer dielectric layer on said nitride film.