초록 ▼

Traditionally, hydrofluoric acid (HF) or buffered bydrofluoric acid (NH.sub.4 F) is mixed with water to form a etching solution for cleaning silicon dioxide from semiconductor wafer surfaces. An etching solution formed by mixing ammonium hydrogen bifluoride ((NH.sub.4)HF.sub.2) with water provides a

Traditionally, hydrofluoric acid (HF) or buffered bydrofluoric acid (NH.sub.4 F) is mixed with water to form a etching solution for cleaning silicon dioxide from semiconductor wafer surfaces. An etching solution formed by mixing ammonium hydrogen bifluoride ((NH.sub.4)HF.sub.2) with water provides a benign alternative for cleaning silicon dioxide.

대표청구항

[ What is claimed is:] [1.] A method of cleaning silicon dioxide, comprising the steps of:placing a silicon substrate having a silicon dioxide layer on a face thereon into a tank; anddirectly producing HF.sub.2.sup.- etching species in the tank which etches the silicon dioxide layer.

[ What is claimed is:] [1.] A method of cleaning silicon dioxide, comprising the steps of:placing a silicon substrate having a silicon dioxide layer on a face thereon into a tank; anddirectly producing HF.sub.2.sup.- etching species in the tank which etches the silicon dioxide layer.