초록 ▼

An apparatus for producing a plasma suitable for semiconductor processing at pressures in the low millitorr range. The apparatus includes a vacuum chamber with a dielectric window, a generally planar coil disposed adjacent the window outside the chamber and coupled to an appropriate power source, an

An apparatus for producing a plasma suitable for semiconductor processing at pressures in the low millitorr range. The apparatus includes a vacuum chamber with a dielectric window, a generally planar coil disposed adjacent the window outside the chamber and coupled to an appropriate power source, and a plasma initiator disposed within the chamber. Once the plasma is initiated, the planar coil sustains the plasma by inductive power coupling. In one embodiment the plasma initiator is a secondary electrode disposed within the chamber and coupled to a second RF power source. In an alternative embodiment both the secondary electrode and a target pedestal are coupled to the secondary RF power source through a power splitter. In an alternative embodiment, the plasma initiator is used to ionize a portion of the process gas and provide a plasma that may then inductively couple with the planar coil. Initial ionization of the process gas may be achieved by use of an ultraviolet light source, an ultraviolet laser, a high voltage power source such as a tesla coil, or an electrical arc forming device such as a spark plug.

대표청구항 ▼

[ What is claimed is:] [1.] A plasma initiating assembly, comprising:a vacuum chamber, said vacuum chamber having a process chamber filled with a gas that is capable of forming a plasma, said process chamber having an aperture;a window disposed in said aperture;a primary coil disposed outside said p

[ What is claimed is:] [1.] A plasma initiating assembly, comprising:a vacuum chamber, said vacuum chamber having a process chamber filled with a gas that is capable of forming a plasma, said process chamber having an aperture;a window disposed in said aperture;a primary coil disposed outside said process chamber adjacent said window;a Tesla coil having an output rod which projects into and is electrically insulated from said process chamber;means for applying an electrical potential to said Tesla coil to create arcing and to initiate a plasma within said process chamber with the gas at a pressure of approximately 2 to 5 millitorr;wherein energy from said primary coil maintains the plasma initiated by said Tesla coil; anda wafer is located in said process chamber and thereby exposed to the plasma.