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III-nitride optoelectronic semiconductor device containing Lattice mismatched III-nitride semiconductor materials 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-033/00
출원번호 US-0111975 (1998-07-08)
우선권정보 GB-0014468 (1997-07-10)
발명자 / 주소
  • Duggan Geoffrey,GBX
출원인 / 주소
  • Sharp Kabushiki Kaisha, JPX
대리인 / 주소
    Renner, Otto, Boisselle & Sklar
인용정보 피인용 횟수 : 38  인용 특허 : 4

초록 ▼

A light-emitting diode or laser diode comprises a sapphire substrate and, grown on the substrate, a GaN buffer layer, an n-doped GaN contact layer, an n-doped (AlGa)N cladding layer, a Zn-doped (InGa)N active layer, a p-doped (AlGa)N cladding layer and a p-doped GaN contact layer. Graded layers are

대표청구항 ▼

[ What is claimed is:] [1.] A III-nitride optoelectronic semiconductor device, comprising:a substrate;a first contact region of a first doping type;a first cladding region of the first doping type;an active region formed of a first III-nitride semiconductor material;a second cladding region of a sec

이 특허에 인용된 특허 (4)

  1. Bour David P. (Robbinsville NJ) Shealy James R. (Ithaca NY), High power (1,4 W)AlGaInP graded-index separate confinement heterostructure visible (l 상세보기
  • Edmond John A. (Cary NC) Bulman Gary E. (Cary NC) Kong Hua-Shuang (Raleigh NC), Low-strain laser structures with group III nitride active layers.
    상세보기
  • Fujii Toshio (Atsugi JPX) Sandhu Adarsh (Yokohama JPX), Method of growing epitaxial layers.
    상세보기
  • Naito Hiroki (Osaka JPX) Kume Masahiro (Siga JPX), Semiconductor laser device.
    상세보기

    • 이 특허를 인용한 특허 (38)

    1. Yuge Shozo,JPX, Compound semiconductor element and its manufacturing method.
      상세보기
    2. Wang, Tao, GaN structures having low dislocation density and methods of manufacture.
      상세보기
    3. Goyal, Anish; Turner, George, GaSb-clad mid-infrared semiconductor laser.
      상세보기
    4. Edmond, John Adam; Doverspike, Kathleen Marie; Kong, Hua-shuang; Bergmann, Michael John, Group III nitride LED with undoped cladding layer.
      상세보기
    5. Edmond, John Adam; Doverspike, Kathleen Marie; Kong, Hua-shuang; Bergmann, Michael John, Group III nitride LED with undoped cladding layer.
      상세보기
    6. Edmond, John Adam; Doverspike, Kathleen Marie; Kong, Hua-shuang; Bergmann, Michael John, Group III nitride LED with undoped cladding layer.
      상세보기
    7. Edmond, John Adam; Doverspike, Kathleen Marie; Kong, Hua-shuang; Bergmann, Michael John, Group III nitride LED with undoped cladding layer (5000.137).
      상세보기
    8. Edmond, John Adam; Doverspike, Kathleen Marie; Kong, Hua-Shuang; Bergmann, Michael John; Emerson, David Todd, Group III nitride LED with undoped cladding layer and multiple quantum well.
      상세보기
    9. Edmond, John Adam; Doverspike, Kathleen Marie; Kong, Hua-shuang; Bergmann, Michael John; Emerson, David Todd, Group III nitride LED with undoped cladding layer and multiple quantum well.
      상세보기
    10. Shibata, Naoki, Group III nitride compound semiconductor device.
      상세보기
    11. Edmond, John Adam; Doverspike, Kathleen Marie; Kong, Hua-shuang; Bergmann, Michael John, Group III nitride light emitting devices with gallium-free layers.
      상세보기
    12. Edmond, John Adam; Doverspike, Kathleen Marie; Kong, Hua-shuang; Bergmann, Michael John, Group III nitride light emitting devices with progressively graded layers.
      상세보기
    13. Taki, Tetsuya; Narukawa, Mitsuhisa; Aoki, Masato; Okuno, Koji; Toyoda, Yusuke; Nishijima, Kazuki; Yamada, Shuhei, Group III nitride-based compound semiconductor light-emitting device and method for producing the same.
      상세보기
    14. Sugawara, Hideto; Hiratsuka, Tsunenori, Group-III nitride semiconductor stack, method of manufacturing the same, and group-III nitride semiconductor device.
      상세보기
    15. Sugawara,Hideto; Hiratsuka,Tsunenori, Group-III nitride semiconductor stack, method of manufacturing the same, and group-III nitride semiconductor device.
      상세보기
    16. Duggan, Geoffrey, III-Nitride optoelectronic semiconductor device containing lattice mismatched III-Nitride semiconductor materials.
      상세보기
    17. Khare, Reena; Goetz, Werner K.; Camras, Michael D., Increasing the brightness of III-nitride light emitting devices.
      상세보기
    18. Shen, Yu-Chen; Misra, Mira S., Indium gallium nitride separate confinement heterostructure light emitting devices.
      상세보기
    19. Chakraborty, Arpan; Shen, Likun; Mishra, Umesh K., Interdigitated multi-pixel arrays for the fabrication of light-emitting devices with very low series-resistances and improved heat-sinking.
      상세보기
    20. Chakraborty, Arpan; Shen, Likun; Mishra, Umesh K., Interdigitated multiple pixel arrays of light-emitting devices.
      상세보기
    21. Chakraborty, Arpan; Shen, Likun; Mishra, Umesh K., Interdigitated multiple pixel arrays of light-emitting devices.
      상세보기
    22. Chakraborty, Arpan; Shen, Likun; Mishra, Umesh K., Interdigitated multiple pixel arrays of light-emitting devices.
      상세보기
    23. Chakraborty, Arpan; Shen, Likun; Mishra, Umesh K., Interdigitated multiple pixel arrays of light-emitting devices.
      상세보기
    24. Chakraborty, Arpan; Shen, Likun; Mishra, Umesh K., Interdigitated multiple pixel arrays of light-emitting devices.
      상세보기
    25. Edmond, John Adam; Doverspike, Kathleen Marie; Kong, Hua-shuang; Bergmann, Michael John, Light emitting devices with Group III nitride contact layer and superlattice.
      상세보기
    26. Okuyama, Hiroyuki; Biwa, Goshi, Method for manufacturing GaN semiconductor light-emitting element.
      상세보기
    27. Kano, Takashi; Ohbo, Hiroki; Hayashi, Nobuhiko, Method of forming nitride-based semiconductor layer, and method of manufacturing nitride-based semiconductor device.
      상세보기
    28. Hooper Stewart Edward,GBX, Method of growing a buffer layer using molecular beam epitaxy.
      상세보기
    29. Schottker,Bernd; Heuken,Michael; Jürgensen,Holger; Strauch,Gerd; Wachtendorf,Bernd, Method of growing nitrogenous semiconductor crystal materials.
      상세보기
    30. Saxler, Adam William, Methods of fabricating strain balanced nitride heterojunction transistors.
      상세보기
    31. Kang, Sang Won; Park, Seong Ju; Kwon, Min Ki; Lee, Sang Jun; Cho, Joo Young; Kim, Yong Chun; Han, Sang Heon; Lee, Dong Ju; Oh, Jeong Tak; Kim, Je Won, Nitride semiconductor light emitting device.
      상세보기
    32. Seko, Yasuji; Sakamoto, Akira, Semiconductor device, surface emitting semiconductor laser and edge emitting semiconductor laser.
      상세보기
    33. Yoshii, Shigeo; Ohnaka, Kiyoshi, Semiconductor light-emitting device and apparatus for driving the same.
      상세보기
    34. Cheng, Chih-Ching; Tsai, Tzong-Liang, Semiconductor structure combination for epitaxy of semiconductor optoelectronic device.
      상세보기
    35. Saxler,Adam William, Strain balanced nitride heterojunction transistors.
      상세보기
    36. Saxler,Adam William, Strain compensated semiconductor structures.
      상세보기
    37. Saxler, Adam William, Strain compensated semiconductor structures and methods of fabricating strain compensated semiconductor structures.
      상세보기
    38. Wang Nang Wang GB; Yurii Georgievich Shreter RU; Yurii Toomasovich Rebane RU, Unipolar light emitting devices based on III-nitride semiconductor superlattices.
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