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특허 상세정보

Process for producing surface-modified rubber, surface-modified rubber, and sealing material

국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) B05D-001/18    B05D-003/02   
미국특허분류(USC) 427/307 ; 427/387 ; 427/393.5 ; 427/430.1
출원번호 US-0142531 (1998-09-09)
우선권정보 JP-0276257 (1997-10-08)
국제출원번호 PCT/JP97/04831 (1997-12-25)
§371/§102 date 19980909 (19980909)
국제공개번호 WO-9830622 (1998-07-16)
발명자 / 주소
출원인 / 주소
대리인 / 주소
    Webb Ziesenheim Logsdon Orkin & Hanson, P.C.
인용정보 피인용 횟수 : 12  인용 특허 : 1
초록

The object of the present invention is to provide a surface modified rubber and a seal material which enable obtaining a rubber molding being excellent in nonadherence, low friction, abrasion resistance and plasma resistance while retaining strength, compression set, sealing capability and deformation follow-up properties inherently possessed by a rubber material. The process for producing a surface modified rubber according to the present invention comprises contacting a treatment liquid containing a monomer having a polymerizable double bond, a polymer...

대표
청구항

[ What is claimed is:] [1.] A process for producing a surface modified rubber, comprising:contacting a treatment liquid containing a monomer having a polymerizable double bond, a polymerization initiator and a solvent with a rubber base material, wherein the monomer is a monomer of an ethylenically unsaturated fluorocompound or an ethylenically unsaturated organosiloxane or both and said solvent dissolves the monomer and the polymerization initiator and swells the rubber base material such that the solvent, the monomer and the polymerization initiator in...

이 특허를 인용한 특허 피인용횟수: 12

  1. Enicks, Darwin Gene; Carver, Damian. Bandgap and recombination engineered emitter layers for SiGe HBT performance optimization. USP2010017651919.
  2. Enicks,Darwin Gene; Carver,Damian. Bandgap engineered mono-crystalline silicon cap layers for SiGe HBT performance enhancement. USP2007117300849.
  3. Shinozaki, Massanori. Coating film forming method, coating material, releasing agent and rubber material. USP2010027666936.
  4. Hayashi, Yosuke; Egawa, Shuichi; Inoue, Keiichi; Yamaguchi, Kazushi; Iida, Kazuhiro; Imai, Kentaro; Ishida, Masanori. Electrophotographic device member. USP2016099436151.
  5. Kawase,Masafumi; Horiguchi,Takashi; Kawahito,Shigehiro. Flow-and-leveling agents for waterborne coatings. USP2007047208544.
  6. Hetherington, Ray. Fluoroelastomer compositions, their preparation, and their use. USP2005076921796.
  7. Hetherington,Ray. Fluoroelastomer compositions, their preparation, and their use. USP2007077244789.
  8. Enicks,Darwin Gene. Method and system for controlled oxygen incorporation in compound semiconductor films for device performance enhancement. USP2008107439558.
  9. Patrick A. Van Cleemput ; Ravi Kumar Laxman ; Jen Shu ; Michelle T. Schulberg ; Bunsen Nie. Method to deposit SiOCH films with dielectric constant below 3.0. USP2002016340628.
  10. Komvopoulos, Kyriakos; Tajima, Satomi. Modification of polymer surface with shielded plasma. USP2012058168074.
  11. Fagan, John L.; Bossard, Mark. Selectable delay pulse generator. USP2012068193846.
  12. Enicks,Darwin G.. Very low moisture o-ring and method for preparing the same. USP2006077080440.