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[미국특허] Semiconductor hetero-interface photodetector 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/70
출원번호 US-0801456 (1997-02-18)
발명자 / 주소
  • Bowers John E.
  • Hawkins Aaron R.
출원인 / 주소
  • Ciena Corporation
대리인 / 주소
    Berman
인용정보 피인용 횟수 : 70  인용 특허 : 26

초록 ▼

By using wafer fusion, various structures for photodetectors and photodetectors integrated with other electronics can be achieved. The use of silicon as a multiplication region and III-V compounds as an absorption region create photodetectors that are highly efficient and tailored to specific applic

대표청구항 ▼

[ What is claimed is:] [1.] A method for creating a wavelength division multiplexing (WDM) photodetector, comprising the steps of:(a)(i) growing a first mirror on a bottom of a substrate;(ii) growing an absorbing layer having a first lattice constant on the first mirror:(iii) fusing a multiplication

이 특허에 인용된 특허 (26) 인용/피인용 타임라인 분석

  1. Kobayashi Masahiro (Inagi JPX) Yamazaki Susumu (Hadano JPX) Mikawa Takashi (Tokyo JPX) Nakajima Kazuo (Kawasaki JPX) Kaneda Takao (Kawasaki JPX), Avalanche multiplication photodiode having a buried structure.
    상세보기
  2. Brennan Kevin F. (Atlanta GA), Avalanche photodetector.
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  3. Webb Paul P. (Beaconsfield CAX), Avalanche photodiode with central zone in active and absorptive layers.
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  4. Quenzer Hans J. (Berlin DEX) Benecke Wolfgang (Vorwerk-Buchholz DEX), Direct substrate bonding.
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  5. Dell John M. (Blackurn South AUX) Yoffe Gideon W. (Eindhoven NLX), Electro-optic device.
    상세보기
  6. Tabatabaie Nader (Red Bank NJ), Fabrication method for modified planar semiconductor structures.
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  7. Kurtz Anthony D. (Teaneck NJ) Ned Alexander A. (Bloomingdale NJ), Fusion bonding technique for use in fabricating semiconductor devices.
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  8. Terranova Nancy (Wilmington DE) Barnett Allen M. (Newark DE), Hetero-epitaxial growth of non-lattice matched semiconductors.
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  9. Koch Thomas L. (Holmdel NJ) Kogelnik Herwig (Rumson NJ) Koren Uziel (Fair Haven NJ), Inline diplex lightwave transceiver.
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  10. Kasahara Kenichi (Tokyo JPX) Sugou Shigeo (Tokyo JPX), Method for fabricating semiconductor laser and photo detecting arrays for wavelength division multiplexing optical inter.
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  11. Goossen Keith W. (Aberdeen NJ), Method for manufacturing integrated semiconductor devices.
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  12. Grupen-Shemansky Melissa E. (Phoenix AZ) Cambou Bertrand F. (Mesa AZ), Method of bonding silicon and III-V semiconductor materials.
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  13. Takahashi Shigeki (Kawasaki JPX) Shiraki Yasuhiro (Tokyo JPX), Method of forming a pattern in semiconductor device manufacturing process.
    상세보기
  14. Forrest Stephen R. (Torrance CA), Method of making avalanche photodiode.
    상세보기
  15. Furuyama Hideto (Tokyo JPX) Sadamasa Tetsuo (Chigasaki JPX), Method of manufacturing a semiconductor light detector.
    상세보기
  16. Matsushima Yuichi (Tokorozawa JPX) Sakai Kazuo (Tokyo JPX) Akiba Shigeyuki (Tokyo JPX), Method of manufacturing avalanche photo diode.
    상세보기
  17. Maruska H. Paul (Acton MA), Optical heterodyne receiver for fiber optic communications system.
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  18. Sands Timothy D. (Cranbury NJ), Palladium welding of a semiconductor body.
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  19. Hunt Neil E. J. (Scotch Plains NJ) Schubert Erdmann F. (New Providence NJ) Zydzik George J. (Columbia NJ), Photodetector with a resonant cavity.
    상세보기
  20. Bryan Robert P. (Boulder CO) Olbright Gregory R. (Boulder CO) Brennan Thomas M. (Albuquerque NM) Tsao Jeffrey Y. (Albuquerque NM), Photodetector with absorbing region having resonant periodic absorption between reflectors.
    상세보기
  21. Unlu M. Selim ; Onat Bora, Polarization sensitive photodetectors and detector arrays.
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  22. Biallas Vesna (Ruetlingen DEX) Goebel Herbert (Ruetlingen DEX) Spitz Richard (Ruetlingen DEX), Process for manufacturing semiconductor components.
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  23. Bethea Clyde G. (943 Hillside Ave. Plainfield NJ 07062) Hasnain Ghulam (14 Daphne Ct. Edison NJ 08820) Levine Barry F. (22 Bear Brook La. Livingston NJ 07039) Malik Roger J. (23 Ridgedale Ave. Summit, Quantum-well radiation-interactive device, and methods of radiation detection and modulation.
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  24. Okuno Yae (Kokubunji JPX) Uomi Kazuhisa (Hachioji JPX) Aoki Masahiro (Kokubunji JPX) Sagawa Misuzu (Kokubunji JPX), Semiconductor device having first and second semiconductor structures directly bonded to each other.
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  25. Cunningham John E. (Lincroft NJ) Goossen Keith W. (Aberdeen NJ), Surface-normal semiconductor optical cavity devices.
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  26. Kish Fred A. (San Jose CA) Steranka Frank M. (San Jose CA) DeFevere Dennis C. (Palo Alto CA) Robbins Virginia M. (Los Gatos CA) Uebbing John (Palo Alto CA), Wafer bonding of light emitting diode layers.
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  8. Berger, Kurt W., EUV mirror based absolute incident flux detector.
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  9. Farrar, Paul A., Epitaxial semiconductor layer and method.
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  10. Farrar,Paul A., Epitaxial semiconductor layer and method.
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  11. Farrar,Paul A., Epitaxial semiconductor layer and method.
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  12. Farrar,Paul A., Epitaxial semiconductor layer and method.
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  13. Letertre, Fabrice; Ghyselen, Bruno; Rayssac, Olivier, Fabrication of substrates with a useful layer of monocrystalline semiconductor material.
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  14. Letertre, Fabrice; Ghyselen, Bruno; Rayssac, Olivier, Fabrication of substrates with a useful layer of monocrystalline semiconductor material.
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  16. Letertre, Fabrice; Ghyselen, Bruno; Rayssac, Olivier; Rayssac, legal representative, Pierre; Rayssac, legal representative, Gisèle, Fabrication of substrates with a useful layer of monocrystalline semiconductor material.
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  17. Wober, Munib, Full color single pixel including doublet or quadruplet Si nanowires for image sensors.
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  19. Morse, Michael T.; Dosunmu, Olufemi I.; Liu, Ansheng; Paniccia, Mario J., Germanium/silicon avalanche photodetector with separate absorption and multiplication regions.
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  20. Morse, Michael T.; Dosunmu, Olufemi I.; Liu, Ansheng; Paniccia, Mario J., Germanium/silicon avalanche photodetector with separate absorption and multiplication regions.
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  21. Pauchard, Alexandre; Lo, Yu-Hwa, Hetero-interface avalance photodetector.
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  22. Huffaker, Diana L.; Dawson, Larry R.; Balakrishnan, Ganesh, Hybrid integration based on wafer-bonding of devices to AlSb monolithically grown on Si.
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  23. Bowers, John E., Hybrid silicon evanescent photodetectors.
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  24. Bowers, John E., Hybrid silicon optoelectronic device and method of formation.
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  25. Bowers, John E., III-V photonic integration on silicon.
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  26. Bowers, John E., III-V photonic integration on silicon.
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  27. Bowers, John E., III-V photonic integration on silicon.
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  28. Bowers, John Edward, III-V photonic integration on silicon.
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  29. Pauchard, Alexandre; Morse, Michael T., Inverted planar avalanche photodiode.
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  30. Seo, Kwanyong; Wober, Munib; Steinvurzel, Paul; Schonbrun, Ethan; Dan, Yaping; Crozier, Kenneth, Light absorption and filtering properties of vertically oriented semiconductor nano wires.
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  32. Kim, Gyungock; Kim, Sang Hoon; Jang, Ki Seok; Kim, In Gyoo; Oh, Jin Hyuk; Kim, Sun Ae, Low-voltage high-gain high-speed germanium photo detector and method of fabricating the same.
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