초록 ▼

A substrate made of polycrystalline .beta.SiC and having an essentially pore free surface is disclosed. The substrate is adapted for use as a chip wafer to receive different thin film coatings as part of manufacturing electrical devices and integrated circuits. The substrate comprises a polycrystall

A substrate made of polycrystalline .beta.SiC and having an essentially pore free surface is disclosed. The substrate is adapted for use as a chip wafer to receive different thin film coatings as part of manufacturing electrical devices and integrated circuits. The substrate comprises a polycrystalline silicon carbide outer surface with {111} crystallographic planes exposed on the working surface, the outer surface is essentially pore free or without exposed pores, scratches, steps or other such depressions or discontinuities on the surface of the substrate having at least one dimension larger than about 2.54 microns, and no non-stoichiometric silicon or carbon other than that which may be residual from the process of making silicon carbide ceramic material.

대표청구항 ▼

[ I claim:] [1.] A laminate comprisinga) a chip wafer substrate component comprising a working surface, at least a portion of the working surface further comprising a polycrystalline beta silicon carbide outer surface with {111} crystallographic planes exposed on the working surface, without exposed

[ I claim:] [1.] A laminate comprisinga) a chip wafer substrate component comprising a working surface, at least a portion of the working surface further comprising a polycrystalline beta silicon carbide outer surface with {111} crystallographic planes exposed on the working surface, without exposed pores, scratches, steps or other such depressions or discontinuities on the surface of the substrate having at least one dimension larger than 2.54 microns, and no non-stoichiometric silicon or carbon other than that which may be residual from the process of making silicon carbide ceramic material; andb) a non-magnetic thin film coating on the outer surface thereof.