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Diamond films and methods for manufacturing diamond films 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C30B-029/04
출원번호 US-0924701 (1997-09-05)
우선권정보 JP-0257590 (1996-09-05)
발명자 / 주소
  • Yokota Yoshihiro,JPX
  • Tachibana Takeshi,JPX
  • Miyata Koichi,JPX
  • Kobashi Koji,JPX
출원인 / 주소
  • Kabushiki Kaisha Kobe Seiko Sho, JPX
대리인 / 주소
    Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
인용정보 피인용 횟수 : 36  인용 특허 : 6

초록

Diamond films and novel method to grow the diamond films can improve the performance of products utilizing diamond films. In the cathodoluminescence taken at room temperature, the integrated intensity ratio of the diamond films, CL.sub.1 /CL.sub.2, is equal or greater than 1/20, where CL.sub.1 is th

대표청구항

[ What is claimed is:] [1.] A diamond film, wherein a cathodoluminescence spectrum obtained at room temperature of said diamond film has an integrated intensity ratio between emission bands CL.sub.1 /CL.sub.2 equal to or greater than 1/20, where CL.sub.1 is an integrated intensity of an emission ban

이 특허에 인용된 특허 (6)

  1. Spear Paul Martyn,GB2 ; Welbourn Christopher Mark,GB2, Distinguishing natural from synthetic diamonds.
  2. Vohra Yogesh K. (Birmingham AL) McCauley Thomas S. (Birmingham AL), High growth rate homoepitaxial diamond film deposition at high temperatures by microwave plasma-assisted chemical vapor.
  3. Chen Chia-Fu (Hsinchu TWX) Chen Sheng-Hsiung (Taichung Hsien TWX) Hong Tsao-Ming (Changhua Hsien TWX), Method of forming a boron-doped diamond film by chemical vapor deposition.
  4. Chen Chia-Fu (835-2 Hsinchu TWX) Nishimura Kazuhito (835-2 Osaka JPX) Ko Ensei (835-2 Nishi Koiso ; Oiso-machi ; Naka-gun ; Kanagawa-ken JPX) Ishizuka Hiroshi (Tokyo JPX) Hosomi Satoru (Hiratsuka JPX, Method of producing diamond of controlled quality.
  5. Shintani Yoshihiro,JPX ; Tachibana Takeshi,JPX ; Nishimura Kozo,JPX ; Miyata Koichi,JPX ; Yokota Yoshihiro,JPX ; Kobashi Koji,JPX, Methods for manufacturing monocrystalline diamond films.
  6. Shintani Yoshihiro,JPX ; Tachibana Takeshi,JPX ; Nishimura Kozo,JPX ; Miyata Koichi,JPX ; Yokota Yoshihiro,JPX ; Kobashi Koji,JPX, Methods for manufacturing substrates to form monocrystalline diamond films by chemical vapor deposition.

이 특허를 인용한 특허 (36)

  1. Scarsbrook,Geoffrey Alan; Martineau,Philip Maurice; Twitchen,Daniel James; Whitehead,Andrew John; Cooper,Michael Andrew; Dorn,B?rbel Susanne Charlotte, Boron doped diamond.
  2. Davies, Geoffrey John; Chapman, Raymond Albert; Stewart, Aulette; Hedges, Lesley Kay, Crystal growth.
  3. Passlack, Matthias; Hartin, Olin L.; Ray, Marcus; Medendorp, Nicholas, Enhancement mode metal-oxide-semiconductor field effect transistor.
  4. Vieira,Amarildo J. C.; Barenburg,Barbara F.; Brophy,Timothy J., Fabrication of a wavelength locker within a semiconductor structure.
  5. Brondum, Klaus; Welty, Richard P.; Jonte, Patrick B.; Richmond, Douglas S.; Thomas, Kurt, Faucet.
  6. Brondum, Klaus; Welty, Richard P.; Jonte, Patrick B.; Richmond, Douglas S., Faucet component with coating.
  7. Brondum, Klaus, Faucet with wear-resistant valve component.
  8. Liang, Yong; Droopad, Ravindranath; Li, Hao; Yu, Zhiyi, Ferromagnetic semiconductor structure and method for forming the same.
  9. Hanyu,Hiroyuki; Toihara,Takaomi; Sugita,Hiroaki, Hard coating and machining tool disposed with hard coating.
  10. Golding,Brage; Bednarski Meinke,Connie; Dai,Zhong ning, Heteroepitaxial diamond and diamond nuclei precursors.
  11. El Zein,Nada; Ramdani,Jamal; Eisenbeiser,Kurt; Droopad,Ravindranath, Heterojunction tunneling diodes and process for fabricating same.
  12. Lingenfelder, Christian; Ertl, Stephan; Strobel, Stefan; Rosch, Rudolf; Forster, Siegfried; Fryda, Matthias; Schafer, Lothar; Troster, Inga; Herrmann, Dennie, Instrument for surgical purposes and method of cleaning same.
  13. Ooms,William J.; Hallmark,Jerald A., Method and apparatus utilizing monocrystalline insulator.
  14. Ramdani, Jamal; Droopad, Ravindranath; Yu, Zhiyi, Method for fabricating a semiconductor structure including a metal oxide interface with silicon.
  15. Liang,Yong; Droopad,Ravindranath; Hu,Xiaoming; Wang,Jun; Wei,Yi; Yu,Zhiyi, Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process.
  16. Li, Hao; Droopad, Ravindranath; Marshall, Daniel S.; Wei, Yi; Hu, Xiao M.; Liang, Yong, Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate.
  17. Welty,Richard P.; Brondum,Klaus; Richmond,Douglas S.; Jonte,Patrick B., Method of forming a wear resistant component.
  18. Anton, Bryce; Welty, Richard P.; Sullivan, Patrick, Method of producing an article having patterned decorative coating.
  19. Hu, Xiaoming; Craigo, James B.; Droopad, Ravindranath; Edwards, Jr., John L.; Liang, Yong; Wei, Yi; Yu, Zhiyi, Method of removing silicon oxide from a surface of a substrate.
  20. Noguchi, Hitoshi; Sawabe, Atsuhito, Multilayer substrate, method for producing a multilayer substrate, and device.
  21. Reynvaan, Jacob; Grünwald, Johannes, Plasma-assisted chemical gas separation method having increased plasma density and device for implementing the method.
  22. Eisenbeiser,Kurt; Wang,Jun; Droopad,Ravindranath, Semiconductor device and method.
  23. Yu,Zhiyi; Droopad,Ravindranath, Semiconductor structure exhibiting reduced leakage current and method of fabricating same.
  24. Ramdani,Jamal; Droopad,Ravindranath; Hilt,Lyndee L.; Eisenbeiser,Kurt Williamson, Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same.
  25. Ramdani,Jamal; Hilt,Lyndee L., Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate.
  26. Emrick, Rudy M.; Bosco, Bruce Allen; Holmes, John E.; Franson, Steven James; Rockwell, Stephen Kent, Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same.
  27. Eisenbeiser, Kurt W.; Yu, Zhiyi; Droopad, Ravindranath, Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same.
  28. Holm, Paige M.; Barenburg, Barbara Foley; Yamamoto, Joyce K.; Richard, Fred V., Structure and method for fabricating semiconductor microresonator devices.
  29. Lempkowski,Robert; Chason,Marc, Structure and method for fabricating semiconductor structures and devices for detecting an object.
  30. Tungare,Aroon; Klosowiak,Tomasz L., Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials.
  31. Amaratunga, Gehan Anil Joseph; Brezeanu, Mihai; Rashid, Jeremy Suhail; Rupesinghe, Nalin Lalith; Tajani, Antonella; Twitchen, Daniel James; Udrea, Florin; Wort, Christopher John Howard, Switching device.
  32. Hayashi,Kazushi; Tachibana,Takeshi; Yokota,Yoshihiro; Kawakami,Nobuyuki, Ultraviolet sensor and method for manufacturing the same.
  33. Brondum, Klaus; Welty, Richard P.; Richmond, Douglas S.; Jonte, Patrick B.; Thomas, Kurt, Valve component for faucet.
  34. Brondum, Klaus; Welty, Richard P.; Richmond, Douglas S.; Jonte, Patrick B.; Thomas, Kurt, Valve component for faucet.
  35. Welty,Richard P.; Brondum,Klaus; Richmond,Douglas S.; Jonte,Patrick B., Valve component with improved wear resistance.
  36. Welty, Richard P.; Brondum, Klaus; Richmond, Douglas S.; Jonte, Patrick B., Valve component with multiple surface layers.
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