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Addressing system in a multi-port RAM having main and cache memories 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G06F-012/02
  • G06F-013/00
출원번호 US-0018343 (1998-02-04)
발명자 / 주소
  • Walker Robert M.
  • Camacho Stephen
  • Cassada Rhonda
출원인 / 주소
  • Mitsubishi Semiconductor America, Inc.
대리인 / 주소
    Burns, Doane, Swecker & Mathis, L.L.P.
인용정보 피인용 횟수 : 56  인용 특허 : 4

초록

A multi-port memory chip having a DRAM main memory and a SRAM cache memory coupled via a global bus. An addressing system enables the user to perform data transfers between external data ports and the SRAM concurrently with data transfers between the DRAM and the SRAM. To support DRAM operations, DR

대표청구항

[ What is claimed is:] [1.] A memory device comprising on a single chip:multiple data ports for providing data input and output,a main memory for storing data,a cache memory coupled between said multiple data ports and said main memory and having a smaller storage capacity than said main memory,addr

이 특허에 인용된 특허 (4)

  1. Joseph James D. (Monument CO), Circuit with a single address register that augments a memory controller by enabling cache reads and page-mode writes.
  2. Elliott Duncan G. (58 Carsbrooke Rd. Etobicoke ; Ontario CAX M9C 3C5 ) Snelgrove W. Martin (245 Beatrice St. Toronto ; Ontario CAX M6G 3E9 ), Method and apparatus for a single instruction operating multiple processors on a memory chip.
  3. Braceras George M. (Colchester VT) Roberts Alan L. (Jericho VT), Port swapping for improved virtual SRAM performance and processing of concurrent processor access requests.
  4. Dosaka Katsumi (Hyogo-ken JPX) Kumanoya Masaki (Hyogo-ken JPX) Hayano Kouji (Hyogo-ken JPX) Yamazaki Akira (Hyogo-ken JPX) Iwamoto Hisashi (Hyogo-ken JPX) Abe Hideaki (Hyogo-ken JPX) Konishi Yasuhiro, Semiconductor memory device.

이 특허를 인용한 특허 (56)

  1. Abhyankar, Abhijit M.; Ware, Frederick A.; Stark, Donald C.; Hampel, Craig E.; Davis, Paul G., Apparatus and method for maximizing information transfers over limited interconnect resources.
  2. Lee, Dongyun, Bank sharing and refresh in a shared multi-port memory device.
  3. Van Den Bosch, Bram, Block interleaving with memory table of reduced size.
  4. Walker,Robert, Burst mode implementation in a memory device.
  5. Soman Satish ; Opalka Zbigniew ; Chatter Mukesh, Chip layout for implementing arbitrated high speed switching access of pluralities of I/O data ports to internally cached DRAM banks and the like.
  6. Walker, Robert; Skinner, Dan, Configurable multi-port memory device and method thereof.
  7. Walker, Robert; Skinner, Dan, Configurable multi-port memory devices and methods.
  8. Kwak, Sang-hyup; Park, Kwang-il; Bae, Seung-jun, Data mask system and data mask method.
  9. Kwak, Sang-hyup; Park, Kwang-il; Bae, Seung-jun, Data mask system and data mask method.
  10. Segal, Brent M.; Brock, Darren K.; Rueckes, Thomas, Device selection circuitry constructed with nanotube ribbon technology.
  11. Segal,Brent M.; Brock,Darren K.; Rueckes,Thomas, Device selection circuitry constructed with nanotube technology.
  12. Jaiprakash,Venkatachalam C.; Ward,Jonathan W.; Rueckes,Thomas; Segal,Brent M., Devices having horizontally-disposed nanofabric articles and methods of making the same.
  13. Jaiprakash,Venkatachalam C.; Ward,Jonathan W.; Rueckes,Thomas; Segal,Brent M., Devices having vertically-disposed nanofabric articles and methods of making the same.
  14. Johnson, Christopher S., Dynamically setting burst length of double data rate memory device by applying signal to at least one external pin during a read or write transaction.
  15. Johnson, Christopher S., Dynamically setting burst length of double data rate memory device by applying signal to at least one external pin during a read or write transaction.
  16. Johnson, Christopher S., Dynamically setting burst length of double data rate memory device by applying signal to at least one external pin during a read or write transaction.
  17. Johnson, Christopher S., Dynamically setting burst length of double data rate memory device by applying signal to at least one external pin during a read or write transaction.
  18. Johnson, Christopher S., Dynamically setting burst length of memory device by applying signal to at least one external pin during a read or write transaction.
  19. Johnson,Christopher S., Dynamically setting burst length of memory device by applying signal to at least one external pin during a read or write transaction.
  20. Segal, Brent M.; Brock, Darren K.; Rueckes, Thomas, Electromechanical memory array using nanotube ribbons and method for making same.
  21. Segal,Brent M.; Brock,Darren K.; Rueckes,Thomas, Electromechanical memory array using nanotube ribbons and method for making same.
  22. Segal,Brent M.; Brock,Darren K.; Rueckes,Thomas, Electromechanical memory array using nanotube ribbons and method for making same.
  23. Segal, Brent M.; Brock, Darren K.; Rueckes, Thomas, Electromechanical memory having cell selection circuitry constructed with nanotube technology.
  24. Rueckes, Thomas; Segal, Brent M.; Bertin, Claude L., Electromechanical three-trace junction devices.
  25. Rueckes, Thomas; Segal, Brent M.; Brock, Darren K., Electromechanical three-trace junction devices.
  26. Rueckes,Thomas; Segal,Brent M.; Bertin,Claude, Electromechanical three-trace junction devices.
  27. Segal, Brent M.; Brock, Darren K.; Rueckes, Thomas, Hybrid circuit having nanotube electromechanical memory.
  28. Segal, Brent M.; Brock, Darren K.; Rueckes, Thomas, Hybrid circuit having nanotube electromechanical memory.
  29. Segal,Brent M.; Brock,Darren K.; Rueckes,Thomas, Hybrid circuit having nanotube electromechanical memory.
  30. Khodabandehlou, Hamid; Raza, Syed Babar, Memory interface configurable for asynchronous and synchronous operation and for accessing storage from any clock.
  31. Khodabandehlou, Hamid; Raza, Syed Babar, Memory interface configurable for asynchronous and synchronous operation and for accessing storage from any clock domain.
  32. Pelly,Perry H.; Greaves,Carlos A., Memory with serial input-output terminals for address and data and method therefor.
  33. Noh Mi-jung,KRX ; Lee Jeong-seok,KRX, Merged semiconductor device having DRAM and SRAM and data transferring method using the semiconductor device.
  34. Manapat Rajesh ; Koduru Sunil Kumar, Method and apparatus for controlling a memory array with a programmable register.
  35. Keeth, Brent; Shirley, Brian M.; Dennison, Charles H.; Ryan, Kevin J., Method and system for using dynamic random access memory as cache memory.
  36. Keeth, Brent; Shirley, Brian M.; Dennison, Charles H.; Ryan, Kevin J., Method and system for using dynamic random access memory as cache memory.
  37. Keeth,Brent; Shirley,Brian M.; Dennison,Charles H., Method and system for using dynamic random access memory as cache memory.
  38. Keeth,Brent; Shirley,Brian M.; Dennison,Charles H.; Ryan,Kevin J., Method and system for using dynamic random access memory as cache memory.
  39. Shirley, Brian M., Method and system for using dynamic random access memory as cache memory.
  40. Shirley, Brian M., Method and system for using dynamic random access memory as cache memory.
  41. Ward, Jonathan W.; Rueckes, Thomas; Segal, Brent M., Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles.
  42. Rueckes, Thomas; Segal, Brent M.; Brock, Darren K., Methods of making electromechanical three-trace junction devices.
  43. Rueckes, Thomas; Segal, Brent M.; Brock, Darren K., Methods of making electromechanical three-trace junction devices.
  44. Rueckes, Thomas; Segal, Brent M., Methods of nanotube films and articles.
  45. Rueckes,Thomas; Segal,Brent M., Methods of nanotube films and articles.
  46. Rueckes,Thomas; Segal,Brent M., Methods of nanotubes films and articles.
  47. Ward,Jonathan W.; Rueckes,Thomas; Segal,Brent M., Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles.
  48. Ward, Jonathan W.; Rueckes, Thomas; Segal, Brent M., Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles.
  49. Chung, Moo-Kyoung; Ryu, Soo-Jung; Kim, Ho-Young; Seo, Woong; Cho, Young-Chul, Multi-port cache memory apparatus and method.
  50. Rueckes, Thomas; Segal, Brent M., Nanotube films and articles.
  51. Rueckes, Thomas; Segal, Brent M., Nanotube films and articles.
  52. Rueckes, Thomas; Segal, Brent M., Nanotube films and articles.
  53. Cho, Chung Kun; Kalinina, Fedosya; Kravchuk, Dmitry; Androsov, Dmitry; Kovalev, Mikhail, Poly(imide-amide) copolymer and composition including poly(imide-amide) copolymer.
  54. Cho, Chung Kun; Androsov, Dmitry; Kalinina, Fedosya; Kovalev, Mikhail, Poly(imide-amide) copolymer, a method of preparing a poly(imide-amide) copolymer, and an article including a poly(imide-amide) copolymer.
  55. Kanda, Tatsuya; Sato, Kotoku, Semiconductor memory and controller with time-shared mode for row address, column address and data mask signals inputted via address terminals.
  56. Taketo Maesako JP; Kouki Yamamoto JP; Yoshinori Matsui JP; Kenichi Sakakibara JP, Semiconductor memory including main and sub memory portions having plural memory cell groups and a bidirectional data transfer circuit.
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