[특허]Sintered silicon carbide and method for producing the same

[미국특허] Sintered silicon carbide and method for producing the same 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	C04B-055/569
출원번호	US-0137750 (1998-08-21)
우선권정보	JP-0231573 (1997-08-27)
발명자 / 주소	Otsuki Masashi,JPX Wada Hiroaki,JPX Takahashi Yoshitomo,JPX Saito Tasuku,JPX
출원인 / 주소	Bridgestone Corporation, JPX
대리인 / 주소	Oliff & Berridge, PLC
인용정보	피인용 횟수 : 14 인용 특허 : 11

초록 ▼

A sintered silicon carbide containing nitrogen is obtained by sintering a mixture of a powder of silicon carbide and a nonmetallic auxiliary sintering agent. The sintered silicon carbide has a density of 2.9 g/cm.sup.3 or more and contains 150 ppm or more of nitrogen. The sintered silicon carbide preferably has a volume resistivity of 1 .OMEGA..multidot.cm or less and contains .beta.-silicon carbide in an amount of 70% or more of total silicon carbide components. Nitrogen can be introduced into the sintered silicon carbide by adding a nitrogen source, for example, an amine such as hexamethylenetetramine, ammonia, and triethylamine in the production of the powder of silicon carbide which is used as the material powder for producing the sintered silicon carbide or by adding the nitrogen source in combination with the nonmetallic auxiliary sintering agent in the production of the sintered silicon carbide. A high quality sintered silicon carbide having a high density, exhibiting both electric conductivity and high heat conductivity, which can be advantageously used in various fields such as semiconductor industry and electronic information processing instruments industry, is provided.

대표청구항 ▼

[ What is claimed is that:] [1.] A sintered silicon carbide obtained by sintering a mixture of a powder of silicon carbide and a non-metallic auxiliary sintering agent, wherein the sintered silicon carbide has a density of 2.9 g/cm.sup.3 or more, contains 150 ppm or more of nitrogen, and an amount o

이 특허에 인용된 특허 (11) 인용/피인용 타임라인 분석

Divakar Ramesh ; Lau Sai-Kwing, Ceramic comprising silicon carbide with controlled porosity.
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Chia Kai Y. (822 The Circle Lewiston NY 14092), Electrically conductive high strength dense ceramic.
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Kijima Kazunori (131 ; Fukakusa Goudou Shukusha ; Nishidate-cho Kanyuuchi ; Fukakusa ; Fushimi-Ku Kyoto-shi ; Kyoto JPX) Arai Eiki (Narashino JPX) Miyazawa Youichi (Narashino JPX) Konishi Mikio (Nara, Highly pure sintered carbide with high electric conductivity and process of producing the same.
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Prochazka Svante (Ballston Lake NY), Polycrystalline silicon carbide with increased conductivity.
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Takahashi Yoshitomo,JPX ; Wada Hiroaki,JPX ; Miyamoto Taro,JPX, Process for making a silicon carbide sintered body.
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Kojima Shoichi (Tokyo JPX) Minagawa Kazuhiro (Chiba JPX) Saito Tasuku (Tokorozawa JPX) Kurachi Tasuo (Tokyo JPX) Kano Haruyuki (Kashima JPX), Process for preparing silicon carbide powder for use in semiconductor equipment.
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Kurachi Yasuo (Kodaira JPX) Arai Katsuhiko (Iruma JPX) Irako Koichi (Higashimurayama JPX), Process for producing a sintered cubic silicon carbide.
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Watanabe Masakazu (Aichi JPX) Okuno Akiyasu (Aichi JPX) Nozaki Shunkichi (Aichi JPX) Matsuo Yasushi (Aichi JPX) Fukuura Isamu (Aichi JPX), Process for producing silicon carbide heating elements.
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Watanabe Masakazu (Nagoya JPX) Okuno Akiyasu (Nagoya JPX) Matsuo Yasushi (Nagoya JPX), Process for producing silicon carbide heating elements.
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Sakaguchi Mikio (Wakayama JPX) Otsuka Kazuhiro (Wakayama JPX), Process for the production of carbon-filled ceramic composite material.
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Kijima Kazunori (Kyoto JPX) Arai Eiki (Narashino JPX) Miyazawa Youichi (Narashino JPX) Konishi Mikio (Narashino JPX) Kato Ken (Funabashi JPX), Sintered silicon carbide body with high thermal conductivity and process of producing the same.
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이 특허를 인용한 특허 (14) 인용/피인용 타임라인 분석

Tomita, Takahiro; Nagai, Kenkichi; Kobayashi, Hiroharu, Ceramic material and thermal switch.
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McIver, Martin; Seaton, Helen; Moug, Stanley; Beatson, John, Electrical resistance heating element.
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Mikijelj, Biljana; Wu, Shanghua, High resistivity SiC material with B, N and O as the only additions.
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Goela, Jitendra S.; Pickering, Michael A., Low resistivity silicon carbide.
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Goela,Jitendra S.; Pickering,Michael A., Low resistivity silicon carbide.
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Pickering, Michael A.; Goela, Jitendra S., Opaque low resistivity silicon carbide.
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Ramamurthy, Sundar; Hegedus, Andreas G.; Thakur, Randhir, Processing multilayer semiconductors with multiple heat sources.
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Sorabji, Khurshed; Ranish, Joseph Michael; Aderhold, Wolfgang; Hunter, Aaron Muir; Lerner, Alexander N., Rapid thermal processing chamber with shower head.
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Heuberger,Martin; Kuntz,Michael; Nass,R��diger, Silcon carbide element.
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Beatson, John George, Silicon carbide heating elements.
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Ushita, Kazuhiro; Odaka, Fumio; Takahashi, Yoshitomo, Silicon carbide powder, method of producing a green body, and method of producing a sintered silicon carbide.
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Coleman, Thomas G., Silicon carbide sublimation systems and associated methods.
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Ramachandran,Balasubramanian; Ranish,Joseph Michael; Jallepally,Ravi; Ramamurthy,Sundar; Achutharaman,Raman; Haas,Brian; Hunter,Aaron, Tailored temperature uniformity.
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Sorabji, Khurshed; Lerner, Alexander; Ranish, Joseph; Hunter, Aaron; Adams, Bruce; Behdjat, Mehran; Ramanujam, Rajesh, Temperature measurement and control of wafer support in thermal processing chamber.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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[미국특허] Sintered silicon carbide and method for producing the same 원문보기