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Process chamber with inner support 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/00
출원번호 US-0637616 (1996-04-25)
발명자 / 주소
  • Wengert John F.
  • Jacobs Loren R.
  • Halpin Michael W.
  • Foster Derrick W.
  • van der Jeugd Cornelius A.
  • Vyne Robert M.
  • Hawkins Mark R.
출원인 / 주소
  • ASM America, Inc.
대리인 / 주소
    Knobbe, Martens, Olson & Bear, LLP
인용정보 피인용 횟수 : 67  인용 특허 : 48

초록

An improved chemical vapor deposition reaction chamber having an internal support plate to enable reduced pressure processing. The chamber has a vertical-lateral lenticular cross-section with a wide horizontal dimension and a shorter vertical dimension between bi-convex upper and lower walls. A cent

대표청구항

[ What is claimed is:] [1.] A reduced pressure chamber able to withstand external forces on the chamber which occur when the exterior pressure is greater than the chamber interior pressure comprising:a quartz wall;a quartz lower wall spaced from the upper wall, each wall having a convex outer surfac

이 특허에 인용된 특허 (48)

  1. Kusumoto Yoshiro (Kanagawa JPX) Takakuwa Kazuo (Kanagawa JPX) Ikuta Tetsuya (Kanagawa JPX) Suzuki Akitoshi (Kanagawa JPX) Nakayama Izumi (Kanagawa JPX), ACVD (chemical vapor deposition) method for selectively depositing metal on a substrate.
  2. Anderson Roger N. (San Jose CA) Deacon Thomas E. (San Jose CA) Carlson David K. (Santa Clara CA), Apparatus and method for substrate heating utilizing various infrared means to achieve uniform intensity.
  3. Nakayama Izumi (Hiratsuka JPX) Suzuki Akitoshi (Chigasaki JPX) Nawa Hiroyuki (Chigasaki JPX) Kaneko Motohiro (Fujisawa JPX) Kusumoto Yoshiro (Chigasaki JPX) Takakuwa Kazuo (Chigasaki JPX) Ikuta Tetsu, Apparatus for chemical vapor deposition.
  4. Eichman Eric C. (Phoenix AZ) Sommer Bruce A. (Phoenix AZ) Churley Michael J. (Tempe AZ) Ramsey W. Chuck (Tempe AZ), Apparatus for elimination of low temperature ammonia salts in TiCl4 NH3 CVD reaction.
  5. Schladitz ; Hermann Johannes, Apparatus for metallizing strips, sheets or the like.
  6. Shigeki Susumu (Fukuoka JPX), Apparatus for producing semiconductor devices.
  7. Pawlakowitsch Anton (Mmbris DEX) Schnherr Bernhard (Offenbach am Main DEX), Apparatus to reduce the sagging of the outside walls of vacuum tanks.
  8. Whiffin Peter A. C. (Horsham GB2) Maxey Christopher D. (Crawley GB2) Easton Brian C. (Reigate GBX), CVD reactor vessel for forming a solid state electronic device.
  9. Lee Hsing-Chung (Woodland Hills CA), CVD reactor with uniform layer depositing ability.
  10. Campbell, Bryant A.; DuBois, Dale R.; Manriquez, Ralph F.; Miller, Nicholas E., Chemical vapor deposition apparatus.
  11. Campbell, Bryant A.; Miller, Nicholas E., Chemical vapor deposition apparatus.
  12. Monkowski Joseph R. (Carlsbad CA) Logan Mark A. (Carlsbad CA), Chemical vapor deposition method.
  13. Whiffin Peter A. C. (Horsham GB2) Maxey Christopher D. (Crawley GB2) Easton Brian C. (Reigate GBX), Chemical vapor deposition of cadmium mercury telluride.
  14. Gale Ronald P. (Sharon MA) Fan John C. C. (Chestnut Hill MA), Chemical vapor deposition reactor.
  15. Watanabe Atsushi (Nijigaoka-higashidanchi Room No. 19-103 ; No. 21 ; Kamioka-machi 2-chome ; Meitou-ku Tsurugashima JPX) Amano Hiroshi (Nijigaoka-higashidanchi Room No. 19-103 ; No. 21 ; Kamioka-mach, Compound semiconductor vapor phase epitaxial device.
  16. Andrews Reginald Henry (New Milton EN), Construction of containers or tanks.
  17. Anderson Roger N. (Santa Clara CA) Martin John G. (Cranford NJ) Meyer Douglas (Tempe AZ) West Daniel (Sunnyvale CA) Bowman Russell (San Jose CA) Adams David V. (San Jose CA), Double-dome reactor for semiconductor processing.
  18. Hawkins Mark R. (Mesa AZ) Robinson McDonald (Paradise Valley AZ), Gas injectors for reaction chambers in CVD systems.
  19. Nakagawa Keiji (Kadoma JPX) Nakatani Ikuyoshi (Hazukashi JPX) Sakai Takamasa (Kusatsu JPX) Muraoka Yusuke (Osaka JPX), Heat processing apparatus for semiconductor manufacturing.
  20. Akimoto Tatsuo (Otsu JPX) Ogasawara Masafumi (Otsu JPX), Heat treatment apparatus.
  21. Robinson McDonald (Paradise Valley AZ) Ozias Albert E. (Aumsville OR), Heating system for reaction chamber of chemical vapor deposition equipment.
  22. Christensen Robert W. (Monte Sereno CA), Induction heated pancake epitaxial reactor.
  23. Chang Mei (Cupertino CA) Wang David N. K. (Cupertino CA) White John M. (Hayward CA) Maydan Dan (Los Altos Hills CA), Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films.
  24. Carlson David K. (Santa Clara CA) Hey H. Peter W. (San Jose CA) Hann James C. (Santa Clara CA), Low temperature etching in cold-wall CVD systems.
  25. Ghanayem Steve (Sunnyvale CA) Rana Virendra (Los Gatos CA), Metal chemical vapor deposition process using a shadow ring.
  26. Fujii Takuya (Isehara JPX) Yamazaki Susumu (Hadano JPX), Metal organic chemical vapor deposition method with controlled gas flow rate.
  27. Dietze Gerald R. (Portland OR) Holman Erik D. (Vancouver WA), Method and apparatus for configuring an epitaxial reactor for reduced set-up time and improved layer quality.
  28. Wakabayashi Tsuyoshi (Kofu JPX) Ibuka Shigehito (Higashiyamato JPX), Method and apparatus for heat-treating a substrate.
  29. Ozias Albert E. (Aumsville OR), Method for improving the reactant gas flow in a reaction chamber.
  30. Lee Hsing-Chung (Woodland Hills CA), Method of improving layer uniformity in a CVD reactor.
  31. Bonifield Thomas D. (Garland TX) Purdes Andrew J. (Garland TX), Plasma reactor sidewall shield.
  32. Adams David V. (San Jose CA) Anderson Roger N. (Santa Clara CA) Deacon Thomas E. (San Jose CA), Pressure-resistant thermal reactor system for semiconductor processing.
  33. Berg Charles A. (Buckfield ME), Process and apparatus for controllably exchanging heat between two bodies.
  34. Schladitz ; Hermann Johannes, Process for metallizing strips, sheets or the like.
  35. Jrgensen Holger (Aachen DEX) Heyen Meino (Aachen DEX), Quartz-glass reactor for MOCVD systems.
  36. Shimizu Hiroshi (Yokohama JPX), Radiant heating apparatus.
  37. Sandys Norman (16 Crescent Dr. Searingtown NY), Reactor for heating semiconductor substrates.
  38. Hoke William E. (Wayland MA) Pan Noren (Nashua NH) Carter James R. (North Grafton MA), Reactor vessel for the growth of heterojunction devices.
  39. Lenski Harald (Ueberlingen DEX), Reflector furnace.
  40. deBoer Wiebe B. (Kromme Molenweg 10 5521 GB Eersel OR NLX) Ozias Albert E. (7515 Poet Rd. ; S.E. Aumsville OR 97325), Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment.
  41. Anderson Roger N. (San Jose CA) Hey H. Peter W. (San Jose CA) Beinglass Israel (Sunnyvale CA) Venkatesan Mahalingam (San Jose CA), Semiconductor wafer process chamber with susceptor back coating.
  42. Lesk Israel A. (Phoenix AZ) Rice ; Jr. M. John (Tempe AZ) Sarma Kalluri R. (Mesa AZ), Silicon deposition process.
  43. Crabb Richard (Mesa AZ) Robinson McDonald (Paradise Valley AZ) Hawkins Mark R. (Mesa AZ) Goodwin Dennis L. (Tempe AZ) Ferro Armand P. (Scottsdale AZ) deBoer Wiebe B. (Eersel OR NLX) Ozias Albert E. (, Substrate loading apparatus for a CVD process.
  44. Perlov Ilya (Santa Clara CA), Susceptor drive and wafer displacement mechanism.
  45. Kobayashi Toshiyuki (Amagasaki JPX) Koshinaka Masao (Amagasaki JPX) Kinoshita Yoshimi (Amagasaki JPX) Oda Masao (Amagasaki JPX) Yoshizawa Kenji (Amagasaki JPX), Thin film forming apparatus having a gas flow settling device.
  46. Brittin Craig E. (Lockport NY), Vacuum brazing of aluminum alloy workpieces.
  47. Nakamura Yoshiaki (Yokohama JPX), Vapor growth apparatus having a diffuser section containing a flow regulating member.
  48. Adams David V. (San Jose CA) Anderson Roger N. (San Jose CA), Wafer reactor vessel window with pressure-thermal compensation.

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  1. Crabb, Kevin Matthew; Engesser, Philipp; Badam, Vijay Kumar, Apparatus for liquid treatment of disc-shaped articles and heating system for use in such apparatus.
  2. Haukka, Suvi P.; Tuominen, Marko; Rahtu, Antti, Atomic layer deposition of thin films on germanium.
  3. den Hartog Besselink, Edwin; Garssen, Adriaan; Dirkmaat, Marco, Cassette holder assembly for a substrate cassette and holding member for use in such assembly.
  4. Matero, Raija H., Cyclical deposition of germanium.
  5. Matero, Raija H., Cyclical deposition of germanium.
  6. Matero, Raija H., Cyclical deposition of germanium.
  7. Oosterlaken, Theodorus G. M., Delivery of vapor precursor from solid source.
  8. Todd, Michael A; Raaijmakers, Ivo, Deposition from liquid sources.
  9. Todd,Michael A.; Raaijmakers,Ivo, Deposition from liquid sources.
  10. Bauer, Matthias, Dual channel heterostructure.
  11. White, John M.; Verplancken, Donald; Kurita, Shinichi, Electronic device manufacturing chamber method.
  12. Brabant, Paul D.; Italiano, Joseph P.; Arena, Chantal J.; Tomasini, Pierre; Raaijmakers, Ivo; Bauer, Matthias, Epitaxial semiconductor deposition methods and structures.
  13. Brabant, Paul D.; Italiano, Joseph P.; Arena, Chantal J.; Tomasini, Pierre; Raaijmakers, Ivo; Bauer, Matthias, Epitaxial semiconductor deposition methods and structures.
  14. Brabant,Paul D.; Italiano,Joseph P.; Arena,Chantal J.; Tomasini,Pierre; Raaijmakers,Ivo; Bauer,Matthias, Epitaxial semiconductor deposition methods and structures.
  15. Brabant,Paul D.; Italiano,Joseph P.; Arena,Chantal J.; Tomasini,Pierre; Raaijmakers,Ivo; Bauer,Matthias, Epitaxial semiconductor deposition methods and structures.
  16. Brabant,Paul D.; Italiano,Joseph P.; Arena,Chantal J.; Tomasini,Pierre; Raaijmakers,Ivo; Bauer,Matthias, Epitaxial semiconductor deposition methods and structures.
  17. Arena, Chantal; Werkhoven, Christiaan, Gallium trichloride injection scheme.
  18. Arena, Chantal; Bertram, Jr., Ronald Thomas; Lindow, Ed; Werkhoven, Christiaan, Gas injectors including a funnel- or wedge-shaped channel for chemical vapor deposition (CVD) systems and CVD systems with the same.
  19. Bauer,Matthias; Brabant,Paul; Landin,Trevan, Germanium deposition.
  20. Bauer,Matthias; Brabant,Paul; Landin,Trevan, Germanium deposition.
  21. Hill, Eric, Getter plate.
  22. Suzuki, Fujio; Wakai, Hideki, Heat treatment apparatus for preventing an initial temperature drop when consecutively processing a plurality of objects.
  23. Webb, Steven Paul; Glaze, Alan Richard, Insertion and release tool for pipe fitting arrangement and method using such tool.
  24. Ptak, John C., LED heat lamp arrays for CVD heating.
  25. Ptak,John C., LED heat lamp arrays for CVD heating.
  26. Breister, James C.; Chen, Andrew W.; Klinzing, William P.; Sager, Patrick J.; Sundet, Douglas C.; Linabery, Matthew S., Manifolds for delivering fluids having a desired mass flow profile and methods for designing the same.
  27. Vatus, Jean R.; Patalay, Kailash Kiran, Method and apparatus to enhance process gas temperature in a CVD reactor.
  28. Soman, Ravindra; Murthy, Anand, Method for fabricating a bipolar transistor base.
  29. Jan Snijders, Gert; Raaijmakers, Ivo, Method for vaporizing non-gaseous precursor in a fluidized bed.
  30. Lee, Choong Man; Yoo, Yong Min; Kim, Young Jae; Chun, Seung Ju; Kim, Sun Ja, Method of forming metal interconnection and method of fabricating semiconductor apparatus using the method.
  31. Keeton, Tony J.; Stamp, Michael R.; Hawkins, Mark R., Method of loading a wafer onto a wafer holder to reduce thermal shock.
  32. Cody, Nyles W.; Thomas, Shawn G., Methods for depositing an epitaxial silicon germanium layer having a germanium to silicon ratio greater than 1:1 using silylgermane and a diluent.
  33. Raisanen, Petri; Givens, Michael Eugene, Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures.
  34. Merry, Nir; Sapkale, Chandrakant M.; Kremerman, Izya; Hudgens, Jeffrey C., Process chamber apparatus, systems, and methods for controlling a gas flow pattern.
  35. Todd Craig B. ; Yu James E., Process chamber lid.
  36. John F. Wengert ; Loren R. Jacobs ; Michael W. Halpin ; Derrick W. Foster ; Cornelius A. van der Jeugd ; Robert M. Vyne ; Mark R. Hawkins, Process chamber with downstream getter plate.
  37. Halpin, Michael W.; Foster, Derrick W., Process chamber with rectangular temperature compensation ring.
  38. Margetis, Joe; Tolle, John; Bartlett, Gregory; Bhargava, Nupur, Process for forming a film on a substrate using multi-port injection assemblies.
  39. Halpin, Michael W.; Jacobson, Paul T., Rapid bake of semiconductor substrate with upper linear heating elements perpendicular to horizontal gas flow.
  40. Kim, Sung Soo; Jeon, Jong Kwan, Reaction chamber for manufacturing a carbon nanotube, apparatus for manufacturing the carbon nanotube and system for manufacturing the carbon nanotube.
  41. Pan, Yi-Tsung; Young, Mu-Jen, Reaction device with peripheral-in and center-out design for chemical vapor deposition.
  42. Verghese, Mohith; Fondurulia, Kyle; White, Carl; Shero, Eric; Babic, Darko; Terhorst, Herbert; Peussa, Marko; Yan, Min, Reaction system for growing a thin film.
  43. Kinnard,David William; Ferris,David, Reactor assembly and processing method.
  44. Wood,Eric R., Reactor chamber.
  45. Aggarwal, Ravinder; Haro, Robert C., Self-centering susceptor ring assembly.
  46. Arnold Kholodenko ; Dmitry Lubomirsky ; Guang-Jye Shiau ; Peter K. Loewenhardt ; Shamouil Shamouilian, Semiconductor process chamber having improved gas distributor.
  47. Sanchez, Errol Antonio C.; Carlson, David K.; Kuppurao, Satheesh, Semiconductor substrate processing system.
  48. Bauer, Mathias, Separate injection of reactive species in selective formation of films.
  49. Bauer, Matthias, Separate injection of reactive species in selective formation of films.
  50. Wood,Eric R., Staggered ribs on process chamber to reduce thermal effects.
  51. Tomoshi Taniyama JP; Kouji Tometsuka JP, Substrate processing apparatus and method of manufacturing semiconductor device.
  52. Aggarwal, Ravinder; Conner, Rand; Disanto, John; Alexander, James A., Substrate reactor with adjustable injectors for mixing gases within reaction chamber.
  53. Goodman, Matt G.; Stoutyesdijk, Jereon; Aggarwal, Ravinder; Halpin, Mike; Keeton, Tony; Hawkins, Mark; Haen, Lee; Ferro, Armand; Brabant, Paul; Vyne, Robert; Bartlett, Gregory M.; Italiano, Joseph P.; Haro, Bob, Substrate support system for reduced autodoping and backside deposition.
  54. Goodman, Matt G.; Stoutyesdijk, Jereon; Aggarwal, Ravinder; Halpin, Mike; Keeton, Tony; Hawkins, Mark; Haen, Lee; Ferro, Armand; Brabant, Paul; Vyne, Robert; Bartlett, Gregory M.; Italiano, Joseph P.; Haro, Bob, Substrate support system for reduced autodoping and backside deposition.
  55. Wilk, Glen, Surface preparation prior to deposition on germanium.
  56. Wilk,Glen, Surface preparation prior to deposition on germanium.
  57. Aggarwal, Ravinder; Haro, Bob, Susceptor ring.
  58. Aggarwal, Ravinder; Haro, Bob, Susceptor ring.
  59. Tuominen, Marko; Shero, Eric; Verghese, Mohith, System for controlling the sublimation of reactants.
  60. Wallmueller, Andrew, Thermal processing system and method of using.
  61. Wallmueller, Andrew, Thermal processing system and method of using.
  62. Kurita, Shinichi; Beer, Emanuel; Nguyen, Hung T.; Blonigan, Wendell T., Transfer chamber for vacuum processing system.
  63. Kurita,Shinichi; Beer,Emanuel; Nguyen,Hung T.; Blonigan,Wendell T., Transfer chamber for vacuum processing system.
  64. Jostlein,Hans, Ultra-high speed vacuum pump system with first stage turbofan and second stage turbomolecular pump.
  65. Powell, Earl G., Vacuum processing system for producing components.
  66. Powell, Earl G., Vacuum processing system for producing components.
  67. Matsuura, Hiroyuki; Takahashi, Toshiki; Sato, Jun; Aikawa, Katsuyoshi; Ishii, Katsutoshi, Vertical plasma processing apparatus for semiconductor process.

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