이 특허에 인용된 특허 (23) 인용/피인용 타임라인 분석

1. Nakagawa Satoshi (Kyoto JPX) Tahara Yoshifumi (Tokyo JPX) Ogasawara Masahiro (Tokyo JPX), Apparatus and method for generating plasma of uniform flux density.

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2. Steinberg George N. (Westport CT) Reinberg Alan R. (Westport CT), Apparatus for the etching for semiconductor devices.

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3. Patrick Roger (Santa Clara CA) Bose Frank (Wettingen CA CHX) Schoenborn Philippe (San Jose CA) Toda Harry (Santa Clara CA), Coil configurations for improved uniformity in inductively coupled plasma systems.

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4. Kinoshita Haruhisa,JPX ; Matsumoto Osamu,JPX ; Sakuma Harunobu,JPX, Dry process system.

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5. Atari Hitoshi (Kyoto JPX) Kuchimachi Kazuhiro (Kokubu JPX), Electrostatic chuck.

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6. Bates Herbert E., Electrostatic chuck.

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7. Hattori Kei (Yokohama JPX) Sekine Makoto (Yokohama JPX), Electrostatic chucking method.

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8. Cameron John F. (Los Altos CA) Salfelder Joseph F. (Williston VT) Deshpandey Chandra (Fremont CA), Erosion resistant electrostatic chuck with improved cooling system.

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9. Grewal Virinder S. (Fishkill NY) Laux Volker B. (Munich DEX), Etch chamber having three independently controlled electrodes.

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10. Mundt Randall S. (Pleasanton CA), Hybrid electrostatic chuck.

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11. Cheng David (San Jose CA) Maydan Dan (Los Altos Hills CA) Somekh Sasson (Los Altos Hills CA) Stalder Kenneth R. (Redwood City CA) Andrews Dana L. (Mountain View CA) Chang Mei (San Jose CA) White John, Magnetic field-enhanced plasma etch reactor.

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12. Hanley Peter R. (Danville CA) Savas Stephen E. (San Jose CA) Levy Karl B. (Saratoga CA) Jha Neeta (Santa Clara CA) Donohoe Kevin (Mountain View CA), Magnetically enhanced plasma reactor system for semiconductor processing.

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13. Ameen Michael S. ; Hillman Joseph T., Method and apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the.

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14. Collins Kenneth S. (San Jose CA) Buchberger Douglas (Tracy CA), Method for dechucking a workpiece from an electrostatic chuck.

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15. Yanagida Toshiharu,JPX, Method of forming multilevel interconnections using high density plasma metal clean.

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16. Barnes Michael S. (Mahopac NY) Coultas Dennis K. (Hopewell Junction NY) Forster John G. (Poughkeepsie NJ) Keller John H. (Newburgh NY), Optimized helical resonator for plasma processing.

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17. Ishii Nobuo (Yamanashi-ken JPX) Hata Jiro (Yamanashi-ken JPX) Koshimizu Chishio (Yamanashi-ken JPX) Tahara Yoshifumi (Tokyo JPX) Nishikawa Hiroshi (Tokyo JPX) Imahashi Isei (Yamanashi-ken JPX), Plasma processing apparatus.

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18. Collins Kenneth S., Plasma reactor using UHF/VHF and RF triode source, and process.

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19. Blalock Guy (Boise ID), Plasma reactors.

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20. Niori Yusuke,JPX ; Umemoto Koichi,JPX ; Ushikoshi Ryusuke,JPX, Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof.

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21. Stimson Bradley O. (Mountain View CA), RF match detector circuit with dual directional coupler.

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22. Marks Jeffrey (San Jose CA) Collins Kenneth S. (San Jose CA) Yang Chan-Lon (Los Gatos CA) Groechel David W. (Sunnyvale CA) Keswick Peter R. (Newark CA), Selectivity for etching an oxide over a nitride.

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23. Niori Yusuke (Nagoya JPX) Nobori Kazuhiro (Haguri JPX) Ushikoshi Ryusuke (Handa JPX) Umemoto Koichi (Toyota JPX), Wafer heating apparatus and with ceramic substrate and dielectric layer having electrostatic chucking means.

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이 특허를 인용한 특허 (108) 인용/피인용 타임라인 분석

1. Shamouilian, Shamouil; Kaushal, Tony S., Abatement of hazardous gases in effluent.

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2. Gaff, Keith William; Singh, Harmeet; Comendant, Keith; Vahedi, Vahid, Adjusting substrate temperature to improve CD uniformity.

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3. Gaff, Keith William; Singh, Harmeet; Comendant, Keith; Vahedi, Vahid, Adjusting substrate temperature to improve CD uniformity.

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4. Ferron, Shawn; Kelly, John; Vermeulen, Robbert, Apparatus and method for controlled combustion of gaseous pollutants.

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5. Shan Hongqing ; Bjorkman Claes ; Luscher Paul ; Mett Richard ; Welch Michael, Apparatus and method for controlling plasma uniformity in a semiconductor wafer processing system.

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6. Parkhe, Vijay D.; Ahmann, Kurt J.; Tsai, Matthew C.; Sansoni, Steve, Coating for reducing contamination of substrates during processing.

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7. Parkhe, Vijay D.; Ahmann, Kurt J; Tsai, Matthew C; Sansoni, Steve, Cooling pedestal with coating of diamond-like carbon.

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8. Pease, John; Benjamin, Neil, Current peak spreading schemes for multiplexed heated array.

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9. Nebel, Richard; Akcay, Cihan; Barnes, Daniel; Fernandez, Juan; Finn, John; Gibson, William; McEvoy, Aaron; Moser, Keith; Popa-Simil, Liviu, DC-AC electrical transformer.

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10. Finn, John; Akcay, Cihan; Barnes, Daniel; Fernandez, Juan; Gibson, William; McEvoy, Aaron; Moser, Keith; Nebel, Richard; Popa-Simil, Liviu, DC-DC electrical transformer.

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11. Heiser, Thomas, Device for quantitative detection of copper in silicon by transient ionic drift and method using same.

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12. Yang,Jang Gyoo; Hoffman,Daniel J.; Shannon,Steven C.; Burns,Douglas H.; Lee,Wonseok; Kim,Kwang Soo, Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output.

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13. Nebel, Richard A.; Gibson, William L.; Moser, Keith, Electrical transformer.

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14. Han, Nianci; Xu, Li; Shih, Hong; Zhang, Yang; Lu, Danny; Sun, Jennifer Y., Electroplating an yttrium-containing coating on a chamber component.

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15. Shamouilian Shamouil ; Kumar Ananda H. ; Kholodenko Arnold, Electrostatic chuck with improved RF power distribution.

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16. Poh, Fow-Lai, Electrostatic holding apparatus, vacuum environmental apparatus using it and joining apparatus.

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17. Kaushal, Tony S.; Wang, You; Kumar, Ananda H., Erosion-resistant components for plasma process chambers.

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18. Takagi, Toshio, Film deposition apparatus and film deposition method.

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19. Parkhe, Vijay D; Ahmann, Kurt J; Tsai, Matthew C; Sansoni, Steve, Heat exchange pedestal with coating of diamond-like material.

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20. Yokogawa, Ken'etsu; Miyake, Masatoshi, Heat treatment apparatus that performs defect repair annealing.

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21. Gaff, Keith William; Comendant, Keith, Heating plate with diode planar heater zones for semiconductor processing.

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22. Singh, Harmeet; Gaff, Keith; Benjamin, Neil; Comendant, Keith, Heating plate with heating zones for substrate processing and method of use thereof.

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23. Singh, Harmeet, Heating plate with planar heater zones for semiconductor processing.

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24. Singh, Harmeet, Heating plate with planar heater zones for semiconductor processing.

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25. Singh, Harmeet; Gaff, Keith; Benjamin, Neil; Comendant, Keith, Heating plate with planar heater zones for semiconductor processing.

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26. Singh, Harmeet; Gaff, Keith; Benjamin, Neil; Comendant, Keith, Heating plate with planar heater zones for semiconductor processing.

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27. Singh, Harmeet; Gaff, Keith; Benjamin, Neil; Comendant, Keith, Heating plate with planar heating zones for semiconductor processing.

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28. Li, Zhuang; Yiin, Tzuyuan; Han, Lung-Tien; Rossman, Kent, High density plasma chemical vapor deposition (HDP-CVD) processing of gallium arsenide wafers.

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29. Collins, Kenneth S.; Rice, Michael; Trow, John; Buchberger, Douglas; Roderick, Craig A., Inductively coupled RF plasma reactor and plasma chamber enclosure structure therefor.

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30. Kenneth S. Collins ; Michael Rice ; John Trow ; Douglas Buchberger ; Craig A. Roderick, Inductively coupled RF plasma reactor having an antenna adjacent a window electrode.

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31. Dhindsa, Rajinder; Srinivasan, Mukund; Takeshita, Kenji; Marakhtanov, Alexei; Fischer, Andreas, Integrated capacitive and inductive power sources for a plasma etching chamber.

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32. Yukutake, Seigoh; Kojima, Yasuyuki; Nemoto, Minehiro; Amishiro, Masatsugu; Iwasaki, Takayuki; Mitani, Shinichiro; Furukawa, Katsuhiro; Kamada, Chiyoshi; Watanabe, Atsuo; Oouchi, Takayuki; Kanekawa, N, Isolator and a modem device using the isolator.

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33. Yukutake, Seigoh; Kojima, Yasuyuki; Nemoto, Minehiro; Amishiro, Masatsugu; Iwasaki, Takayuki; Mitani, Shinichiro; Furukawa, Katsuhiro; Kamada, Chiyoshi; Watanabe, Atsuo; Oouchi, Takayuki; Kanekawa, Nobuyasu, Isolator and a modem device using the isolator.

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34. Yukutake,Seigoh; Kojima,Yasuyuki; Nemoto,Minehiro; Amishiro,Masatsugu; Iwasaki,Takayuki; Mitani,Shinichiro; Furukawa,Katsuhiro; Kamada,Chiyoshi; Watanabe,Atsuo; Oouchi,Takayuki; Kanekawa,Nobuyasu, Isolator and a modem device using the isolator.

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35. Fukuda,Kazuhiro; Kondo,Yoshikazu; Murakami,Takashi; Iwamaru,Shunichi; Muramatsu,Yumi; Tsuji,Toshio, Layer forming method, product comprising the layer, optical film, dielectric-coated electrode and plasma discharge apparatus.

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36. Fukuda,Kazuhiro; Kondo,Yoshikazu; Murakami,Takashi; Iwamaru,Shunichi; Muramatsu,Yumi; Tsuji,Toshio, Layer forming method, product comprising the layer, optical film, dielectric-coated electrode and plasma discharge apparatus.

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37. Bhatnagar, Ashish; Murugesh, Laxman; Gopalakrishnan, Padma, Localized surface annealing of components for substrate processing chambers.

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38. Thomas E. Wicker ; Robert A. Maraschin ; William S. Kennedy, Low contamination high density plasma etch chambers and methods for making the same.

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39. Wicker, Thomas E.; Maraschin, Robert A.; Kennedy, William S., Low contamination high density plasma etch chambers and methods for making the same.

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40. Hoffman,Daniel J.; Ye,Yan; Katz,Dan; Buchberger, Jr.,Douglas A.; Zhao,Xiaoye; Chiang,Kang Lie; Hagen,Robert B.; Miller,Matthew L., MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression.

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41. Tian, Caizhong; Nozawa, Toshihisa; Ishibashi, Kiyotaka, Manufacturing method of top plate of plasma processing apparatus.

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42. Sriraman, Saravanapriyan; Paterson, Alexander, Method and apparatus for controlling substrate DC-bias and ion energy and angular distribution during substrate etching.

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43. Iseda, Seiji, Method and apparatus for etching a structure in a plasma chamber.

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44. David Guang-Kai Jeng TW; Hong-Ji Lee TW; Fred Yingyi Chen TW; Ching-An Chen TW; Tsung-Nane Kuo TW; Jui-Hung Yeh TW, Method and apparatus for generating high-density uniform plasma.

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45. Mitrovic,Andrej S.; Strang,Eric J.; Sirkis,Murray D.; Quon,Bill H.; Parsons,Richard; Tsukamoto,Yuji, Method and apparatus for improved plasma processing uniformity.

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46. Windhorn,Thomas H, Method and assembly for providing impedance matching network and network assembly.

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47. Brcka, Jozef; Jones, Bill; Leusink, Gert; Long, Jeffrey J.; Oliver, Bill; Tweed, Charles, Method for characterizing the performance of an electrostatic chuck.

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48. Zhang, Ying; Chung, Hua, Method for fabricating vertically stacked nanowires for semiconductor applications.

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49. Zhang, Ying; Chung, Hua, Method for fabricating vertically stacked nanowires for semiconductor applications.

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50. Hoffman,Daniel J.; Gold,Ezra Robert, Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of plural chamber parameters.

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51. Hoffman,Daniel J.; Gold,Ezra Robert, Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure.

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52. Hoffman, Daniel J.; Gold, Ezra Robert, Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of selected chamber parameters.

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53. Hoffman, Daniel J., Method of determining plasma ion density, wafer voltage, etch rate and wafer current from applied bias voltage and current.

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54. Hoffman, Daniel J., Method of determining wafer voltage in a plasma reactor from applied bias voltage and current and a pair of constants.

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55. Yang,Jang Gyoo; Hoffman,Daniel J.; Shannon,Steven C.; Burns,Douglas H.; Lee,Wonseok; Kim,Kwang Soo, Method of feedback control of ESC voltage using wafer voltage measurement at the bias supply output.

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56. Han, Nianci; Xu, Li; Shih, Hong, Method of manufacturing a process chamber component having yttrium-aluminum coating.

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57. Hoffman, Daniel J., Method of operating a plasma reactor chamber with respect to two plasma parameters selected from a group comprising ion density, wafer voltage, etch rate and wafer current, by controlling chamber parameters of source power and bias power.

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58. Ji,Bing; Motika,Stephen Andrew; Wu,Dingjun; Karwacki, Jr.,Eugene Joseph; Roberts,David Allen, Method to protect internal components of semiconductor processing equipment using layered superlattice materials.

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59. Clark, Daniel O.; Raoux, Sebastien; Vermeulen, Robert M.; Crawford, Shaun W., Methods and apparatus for sensing characteristics of the contents of a process abatement reactor.

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60. Kutney, Michael C.; Hoffman, Daniel J.; Delgadino, Gerardo A.; Gold, Ezra R.; Sinha, Ashok; Zhao, Xiaoye; Burns, Douglas H.; Ma, Shawming, Methods to avoid unstable plasma states during a process transition.

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61. Howard, Bradley J., Multifrequency plasma reactor.

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62. Kenney, Jason A.; Carducci, James D.; Collins, Kenneth S.; Fovell, Richard; Ramaswamy, Kartik; Rauf, Shahid, Multiple coil inductively coupled plasma source with offset frequencies and double-walled shielding.

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63. Pease, John; Benjamin, Neil, Multiplexed heater array using AC drive for semiconductor processing.

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64. Pease, John; Benjamin, Nell, Multiplexed heater array using AC drive for semiconductor processing.

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65. Collins, Kenneth S., Parallel-plate electrode plasma reactor having an inductive antenna coupling power through a parallel plate electrode.

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66. Shamouil Shamouilian ; Arnold Kholodenko ; Kwok Manus Wong ; Liang-Guo Wang ; Alexander M. Veytser ; Dennis S. Grimard, Plasma chamber support having dual electrodes.

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67. Hoffman,Daniel J., Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power.

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68. Makoto Nawata JP; Mamoru Yakushiji JP; Tomoyuki Tamura JP, Plasma etching system.

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69. Li, Yunlong; Sato, Noriyoshi; Iizuka, Satoru, Plasma generation apparatus.

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70. Choi,Dae Kyu, Plasma process chamber and system.

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71. Hanawa, Hiroji; Nguyen, Andrew; Horioka, Keiji; Bera, Kallol; Collins, Kenneth S.; Wong, Lawrence; Salinas, Martin Jeff; Lindley, Roger A.; Yang, Hong S., Plasma processing apparatus.

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72. Himori, Shinji; Hayashi, Daisuke; Shimizu, Akitaka, Plasma processing apparatus.

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73. Kanai, Saburo; Takahashi, Kazue; Okamura, Kouichi; Hamasaki, Ryoji; Ito, Satoshi, Plasma processing apparatus.

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74. Yamazawa, Yohei, Plasma processing apparatus.

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75. Yamazawa, Yohei, Plasma processing apparatus.

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76. Yamazawa, Yohei; Iwata, Manabu; Koshimizu, Chishio; Higuchi, Fumihiko; Shimizu, Akitaka; Yamashita, Asao; Iwama, Nobuhiro; Higashiura, Tsutomu; Zhang, DongSheng; Nakaya, Michiko; Murakami, Norikazu, Plasma processing apparatus.

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77. Kanai,Saburo; Takahashi,Kazue; Okamura,Kouichi; Hamasaki,Ryoji; Ito,Satoshi, Plasma processing method.

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78. Ukei, Tomoaki; Higuchi, Kimihiro; Matsudo, Tatsuo; Denpoh, Kazuki, Plasma processing method.

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79. Yasuda, Kenta; Kubota, Toru; Kondo, Takashi; Ishida, Katsuhiro, Plasma processing method and plasma processing apparatus.

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80. Wickramanayaka Sunil,JPX, Plasma processing system.

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81. Kikuchi, Akihiro; Kayamori, Satoshi; Shima, Shinya; Sakamoto, Yuichiro; Higuchi, Kimihiro; Oohashi, Kaoru; Ueda, Takehiro; Shibuya, Munehiro; Gondai, Tadashi, Plasma processor and plasma processing method.

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82. Kikuchi, Akihiro; Kayamori, Satoshi; Shima, Shinya; Sakamoto, Yuichiro; Higuchi, Kimihiro; Oohashi, Kaoru; Ueda, Takehiro; Shibuya, Munehiro; Gondai, Tadashi, Plasma processor and plasma processing method.

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83. Kikuchi, Akihiro; Kayamori, Satoshi; Shima, Shinya; Sakamoto, Yuichiro; Higuchi, Kimihiro; Oohashi, Kaoru; Ueda, Takehiro; Shibuya, Munehiro; Gondai, Tadashi, Plasma processor and plasma processing method.

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84. Collins, Kenneth S; Rice, Michael; Askarinam, Farahmand E; Buchberger, Jr., Douglas A; Roderick, Craig A, Plasma reactor having RF power applicator and a dual-purpose window.

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85. Buchberger, Jr.,Douglas A.; Hoffman,Daniel J.; Regelman,Olga; Carducci,James; Horioka,Keiji; Yang,Jang Gyoo, Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface.

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86. Hoffman, Daniel J.; Lindley, Roger A.; Kutney, Michael C.; Salinas, Martin J.; Tavassoli, Hamid F.; Horioka, Keiji; Buchberger, Jr., Douglas A., Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction.

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87. Hoffman,Daniel J.; Yin,Gerald Zheyao; Ye,Yan; Katz,Dan; Buchberger, Jr.,Douglas A.; Zhao,Xiaoye; Chiang,Kang Lie; Hagen,Robert B.; Miller,Matthew L., Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression.

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88. Hoffman,Daniel; Yang,Jang Gyoo; Buchberger, Jr.,Douglas A.; Burns,Douglas, Plasma reactor with overhead RF source power electrode having a resonance that is virtually pressure independent.

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89. Hofman,Daniel J.; Sun,Jennifer Y.; Thach,Senh; Ye,Yan, Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination.

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90. Makhratchev, Konstantin; Srinivasan, Mukund, Probe for direct wafer potential measurements.

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91. Han, Nianci; Xu, Li; Shih, Hong; Zhang, Yang; Lu, Danny; Sun, Jennifer Y., Process chamber component having electroplated yttrium containing coating.

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92. Han, Nianci; Xu, Li; Shih, Hong, Process chamber component having yttrium—aluminum coating.

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93. Pavloff, Cristopher Mark; Hong, Ilyoung, Process kit for substrate processing chamber.

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94. Haaland, Peter; Papadopoulos, Konstantinos (Dennis); Zigler, Arie, Quasi-neutral plasma generation of radioisotopes.

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95. Drewery, John, RF bias control in plasma deposition and etch systems with multiple RF power sources.

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96. Chiu, Ho-Man Rodney; Clark, Daniel O.; Crawford, Shaun W.; Jung, Jay J.; Todd, Leonard B.; Vermeulen, Robbert, Reactor design to reduce particle deposition during process abatement.

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97. Riker, Martin; Wang, Wei W., Substrate cleaning chamber and components.

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98. Singh, Harmeet; Gaff, Keith; Benjamin, Neil; Comendant, Keith, Substrate supports with multi-layer structure including independent operated heater zones.

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99. Bhatnagar, Ashish; Murugesh, Laxman; Gopalakrishnan, Padma, Surface annealing of components for substrate processing chambers.

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100. Carducci, James D.; Collins, Kenneth S.; Fovell, Richard; Kenney, Jason A.; Ramaswamy, Kartik; Rauf, Shahid, Symmetrical plural-coil plasma source with side RF feeds and RF distribution plates.

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101. Pease, John, System and method for monitoring temperatures of and controlling multiplexed heater array.

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102. Pease, John, System and method for monitoring temperatures of and controlling multiplexed heater array.

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103. Hunt, Jack, System and method for plasma generation.

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104. Gaff, Keith William; Comendant, Keith; Ricci, Anthony, Thermal plate with planar thermal zones for semiconductor processing.

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105. Gaff, Keith William; Comendant, Keith; Ricci, Anthony, Thermal plate with planar thermal zones for semiconductor processing.

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106. Matsumoto, Masahiro; Yamada, Masamichi; Nakano, Hiroshi; Hanzawa, Keiji; Kanamaru, Yasuhiro, Thermal type flow rate measuring apparatus having decrease in coupling capacitance between wiring portions of detection element.

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107. Hudson, Eric, Tunable uniformity in a plasma processing system.

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108. Pipitone, John A.; Smyth, Kenneth D.; Yeung, Mei Po (Mabel), Wafer pre-clean reactor cable termination for selective suppression/reflection of source and bias frequency cross products.

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