초록 ▼

A method of making a semiconductor device is disclosed in which the device has an insulated gate transistor in which source and drain regions are provided in a single crystal semiconductor layer formed on an insulating layer with a channel region interposed between the source and drain regions. The

A method of making a semiconductor device is disclosed in which the device has an insulated gate transistor in which source and drain regions are provided in a single crystal semiconductor layer formed on an insulating layer with a channel region interposed between the source and drain regions. The insulating layers just below the source and drain regions are made thicker than an insulating layer just below the channel region. The method uses substrate bonding to achieve the device.

대표청구항 ▼

[ What is claimed is:] [1.] A method of manufacturing a semiconductor device having an insulated gate field effect transistor, said method comprising the steps of:a) forming thicker selective oxide films just below those regions than the thickness of an insulating layer just below a channel region o

[ What is claimed is:] [1.] A method of manufacturing a semiconductor device having an insulated gate field effect transistor, said method comprising the steps of:a) forming thicker selective oxide films just below those regions than the thickness of an insulating layer just below a channel region on a first substrate which become source and drain regions, flattening said first substrate, and then forming an oxide film on the flattened substrate surface,b) forming a non-porous single crystal semiconductor layer on a porous layer of a second substrate,c) bonding the surface of said non-porous single layer of the second substrate or the surface of an oxide film formed on said non-porous single crystal layer of the second substrate to the oxide film surface of said first substrate,d) removing said porous layer by treatment including at least wet chemical etching,e) forming, in the single crystal semiconductor layer, source and drain regions on said thick selective oxide films,f) forming a gate electrode on said single crystal semiconductor layer,g) forming a selective oxide film in the region around said gate electrode, andh) flattening the formed selective oxide film and an oxide film on said gate electrode.