초록 ▼

An interconnect line on an IMD layer on a semiconductor device is formed in an interconnect hole in the IMD layer. The interconnect hole has walls and a bottom in the IMD layer. A diffusion barrier is formed on the walls and the bottom of the hole. Fill the interconnect hole with a copper metal line

An interconnect line on an IMD layer on a semiconductor device is formed in an interconnect hole in the IMD layer. The interconnect hole has walls and a bottom in the IMD layer. A diffusion barrier is formed on the walls and the bottom of the hole. Fill the interconnect hole with a copper metal line. Perform a CMP step to planarize the device and to remove copper above the IMD layer. Deposit a passivating metal layer on the surface of the copper metal line encapsulating the copper metal line at the top of the hole. Alternatively, a blanket deposit of a copper metal line layer covers the diffusion layer and fills the interconnect hole with a copper metal line. Perform a CMP process to planarize the device to remove copper above the IMD layer. Deposit a passivating metal layer on the surface of the copper metal line encapsulating the copper metal line at the top of the hole in a self-aligned deposition process.

대표청구항 ▼

[ Having thus described the invention, what is claimed as new and desirable to be secured by Letters Patent is as follows:] [8.] A method of forming an interconnect line on an IMD layer with a top surface on a substrate comprising:forming an interconnect trench hole in said IMD layer, said interconn

[ Having thus described the invention, what is claimed as new and desirable to be secured by Letters Patent is as follows:] [8.] A method of forming an interconnect line on an IMD layer with a top surface on a substrate comprising:forming an interconnect trench hole in said IMD layer, said interconnect trench hole having walls and a bottom in said IMD layer,forming a blanket diffusion barrier on said walls, on said bottom of said interconnect trench hole and above said top surface of said IMD layer, said diffusion barrier comprising a refractory metal nitride,forming a blanket deposit of a copper metal line covering said diffusion barrier and filling said interconnect trench hole with said copper metal line and overgrowing said copper metal line above said interconnect trench hole above said top surface covered with said diffusion barrier,depositing a passivating metal layer on the surface of said copper metal line encapsulating said copper metal line at the top of said interconnect trench hole in a self-aligned deposition process,heat treating said device to form an alloy between said copper metal line and said passivating metal layer, said alloy having an alloy surface to the top thereof, andperforming a CMP process to planarize said device to remove the portions of said copper line and said diffusion barrier extending above said top surface of said IMD layer.