이 특허를 인용한 특허 (38)

1. Watanabe,Takayuki; Shibata,Yoshihiko; Ujihara,Tsuyoshi; Yoshida,Takashi; Oyama,Akihiko, Compound semiconductor multilayer structure, hall device, and hall device manufacturing method.

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2. Nakamura,Masahiro; Mino,Akiko, Cross-shaped Hall device having extensions with slits.

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3. Jeffrey D. Morse ; Gregory A. Cooper, Current isolating epitaxial buffer layers for high voltage photodiode array.

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4. Hasnain, Ghulam; Schneider, Richard P.; Corzine, Scott W.; Hueschen, Mark; Takeuchi, Tetsuya; Mars, Danny E., Efficiency GaN-based light emitting devices.

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5. Wang, Tao, GaN structures having low dislocation density and methods of manufacture.

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6. Otsuka, Nobuyuki; Mizuno, Koichi; Yoshii, Shigeo; Suzuki, Asamira, Gallium indium nitride arsenide based epitaxial wafer, a hetero field effect transistor using the wafer, and a method of fabricating the hetero field effect transistor.

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7. Nuyen, Linh T., Heterojunction III-V transistor, in particular HEMT field effect transistor or heterojunction bipolar transistor.

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8. Chen, Tze-Chiang; Hekmatshoartabari, Bahman; Sadana, Devendra K.; Shahidi, Ghavam G.; Shahrjerdi, Davood, Heterojunction light emitting diode.

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9. Chen, Tze-Chiang; Hekmatshoartabari, Bahman; Sadana, Devendra K.; Shahidi, Ghavam G.; Shahrjerdi, Davood, Heterojunction light emitting diode.

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10. Alberi, Kirstin; Mascarenhas, Angelo; Wanlass, Mark, High bandgap III-V alloys for high efficiency optoelectronics.

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11. Choi, Sang Hyouk; Park, Yeonjoon; King, Glen C.; Kim, Hyun-Jung; Lee, Kunik, High mobility transport layer structures for rhombohedral Si/Ge/SiGe devices.

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12. Choi, Sang Hyouk; Park, Yeonjoon; King, Glen C.; Kim, Hyun-Jung; Lee, Kunik, High mobility transport layer structures for rhombohedral Si/Ge/SiGe devices.

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13. Park, Yeonjoon; Choi, Sang H.; King, Glen C.; Elliott, James R., Hybrid bandgap engineering for super-hetero-epitaxial semiconductor materials, and products thereof.

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14. Chen, Tze-Chiang; Hekmatshoartabari, Bahman; Sadana, Devendra K.; Shahidi, Ghavam G.; Shahrjerdi, Davood, III-V heterojunction light emitting diode.

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15. Lu, Yicheng; Emanetoglu, Nuri W., Integrated tunable surface acoustic wave technology and sensors provided thereby.

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16. Kushibe, Mitsuhiro; Ohba, Yasuo; Hashimoto, Rei; Takaoka, Keiji, Laminated semiconductor substrate and optical semiconductor element.

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17. Kushibe,Mitsuhiro; Ohba,Yasuo; Hashimoto,Rei; Takaoka,Keiji, Laminated semiconductor substrate and optical semiconductor element.

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18. Koike,Masayoshi; Yamazaki,Shiro; Kojima,Akira, Light-emitting device using group III nitride group compound semiconductor.

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19. Johnson,Ralph H., Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region.

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20. Taylor, James A.; Tal, Oren; Tal, Reuven, Method and system for user prioritization within call completion services using a preferred allocation of resources.

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21. Lee, Sang Don, Method of producing multi-wavelength semiconductor laser device.

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22. Lee, Sang Don, Method of producing multi-wavelength semiconductor laser device.

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23. Johnson,Ralph H., Migration enhanced epitaxy fabrication of active regions having quantum wells.

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24. Johnson,Ralph H.; Blasingame,Virgil J., Migration enhanced epitaxy fabrication of quantum wells.

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25. Friedman,Daniel J.; Geisz,John F., Multi-junction solar cell device.

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26. Walukiewicz, Wladyslaw; Yu, Kin Man; Wu, Junqiao, Multiband semiconductor compositions for photovoltaic devices.

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27. Johnson,Ralph H., Multicomponent barrier layers in quantum well active regions to enhance confinement and speed.

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28. Fetzer, Christopher M.; King, Richard R.; Colter, Peter C., Multijunction solar cell having a lattice mismatched GrIII-GrV-X layer and a composition-graded buffer layer.

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29. Ishibashi, Akihiko; Yokogawa, Toshiya, Nitride semiconductor light-emitting device comprising multiple semiconductor layers having substantially uniform N-type dopant concentration.

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30. Nishida, Sosuke; Takatsuka, Toshinori, Position detection apparatus.

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31. Hanna,Mark Cooper; Reedy,Robert, Reactive codoping of GaAlInP compound semiconductors.

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32. Kamiyama Satoshi,JPX ; Kume Masahiro,JPX ; Miyanaga Ryoko,JPX ; Kidoguchi Isao,JPX ; Ban Yuzaburo,JPX ; Tsujimura Ayumu,JPX ; Hasegawa Yoshiaki,JPX ; Ishibashi Akihiko,JPX, Semiconductor laser device.

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33. Cotal, Hector L.; Sherif, Raed A., Solar cell having front grid metallization that does not contact the active layers.

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34. King, Richard R.; Fetzer, Christopher M.; Colter, Peter C., Solar cells having a transparent composition-graded buffer layer.

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35. King, Richard R.; Fetzer, Christopher M.; Colter, Peter C., Solar cells having a transparent composition-graded buffer layer.

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36. Johnson,Ralph H., Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers.

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37. Johnson, Ralph H., Vertical cavity surface emitting laser having strain reduced quantum wells.

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38. Johnson, Ralph H.; Penner, R. Scott; Biard, James Robert, Vertical cavity surface emitting laser with undoped top mirror.

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