초록 ▼

A description is given of an optical switching device (1) comprising a transparent substrate (3), a switching film (5) of a hydride compound of a trivalent transition or rare earth metal having a thickness of 300 nm, and a palladium capping layer (7) having a thickness of 30 nm. The capping layer is

A description is given of an optical switching device (1) comprising a transparent substrate (3), a switching film (5) of a hydride compound of a trivalent transition or rare earth metal having a thickness of 300 nm, and a palladium capping layer (7) having a thickness of 30 nm. The capping layer is in contact with hydrogen. An electric current through the switching film (5) can be switched on and off between the terminals (9, 11). Joule heating of the switching film (5) causes a rapid transition from the transparent trihydride state to the absorbing dihydride state. By switching off the current, the switching film (5) cools down, which results in the formation of the absorbing dihydride state. The conversion between both states is reversible and can be repeated many times. The device can be used for controlling light beams, or it can be used in or for a display. Optionally, cooling of the switching film (5) is obtained with a Peltier element in thermal contact with the switching film (5).

대표청구항 ▼

[ What is claimed is:] [1.] An optical switching device comprising:a substrate,a switching film formed on the substrate, which switching film comprises a hydride of a trivalent transition or rare earth metal and can be reversibly switched from a light-absorbing dihydride state to a transparent trihy

[ What is claimed is:] [1.] An optical switching device comprising:a substrate,a switching film formed on the substrate, which switching film comprises a hydride of a trivalent transition or rare earth metal and can be reversibly switched from a light-absorbing dihydride state to a transparent trihydride state by an exchange of hydrogen,a capping layer formed on the switching film, the capping layer being capable of hydrogen dissociation, anda hydrogen source which is in contact with the capping layer, characterized in that the switching device is provided with means for heating and/or cooling the switching film.