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Reverse linear polisher with loadable housing 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/00
출원번호 US-0201928 (1998-12-01)
발명자 / 주소
  • Talieh Homayoun
출원인 / 주소
  • Nutool, Inc.
대리인 / 주소
    Pillsbury Madison & Sutro LLP
인용정보 피인용 횟수 : 64  인용 특허 : 10

초록

The present invention is directed to a method and apparatus for polishing a surface of a semiconductor wafer using a pad moveable in both forward and reverse directions. In both VLSI and ULSI applications, polishing the wafer surface to complete flatness is highly desirable. The forward and reverse

대표청구항

[ I claim:] [11.] A method of polishing a surface of a semiconductor wafer, the method comprising the steps of:supporting the wafer such that the surface of the wafer is exposed to a polishing pad; andpolishing the surface of the wafer by moving the polishing pad bidirectional linearly.

이 특허에 인용된 특허 (10)

  1. Pollock John J., Anti-shear method and system for semiconductor wafer removal.
  2. Talieh Homayoun (San Jose CA), Chemical mechanical polishing apparatus with improved slurry distribution.
  3. Talieh Homayoun (Santa Clara County CA) Weldon David Edwin (Santa Cruz County CA), Linear polisher and method for semiconductor wafer planarization.
  4. Heynacher Erich (Heidenheim DEX), Method and apparatus for lapping and polishing optical surfaces.
  5. Kato Tadahiro (Fukushima-ken JPX) Kudo Hideo (Fukushima-ken JPX), Method for production of silicon wafer and apparatus therefor.
  6. Uzoh Cyprian Emeka ; Harper James McKell Edwin, Method of electrochemical mechanical planarization.
  7. Baldy Andr (Seyssins FRX) Barrois Grard (Le Fontanil FRX) Blanc Henri (Saint Julien de Ratz FRX) Dominiak Marcel (Grenoble FRX), Polishing machine having a taut microabrasive strip and an improved wafer support head.
  8. Bleck Martin C. ; Reardon Timothy J. ; Bergman Eric J., Semiconductor processor with wafer face protection.
  9. Miller Gabriel L. (Westfield NJ) Wagner Eric R. (South Plainfield NJ), Slurry polisher using ultrasonic agitation.
  10. Talieh Homayoun (San Jose CA) Weldon David E. (Los Gatos CA) Nagorski Boguslaw A. (San Jose CA), Wafer polishing machine with fluid bearings.

이 특허를 인용한 특허 (64)

  1. Lugg, Paul S., Abrasive article for the deposition and polishing of a conductive material.
  2. Talieh, Homayoun; Basol, Bulent M., Advanced chemical mechanical polishing system with smart endpoint detection.
  3. Talieh,Homayoun; Basol,Bulent M., Advanced chemical mechanical polishing system with smart endpoint detection.
  4. Talieh, Homayoun; Volodarsky, Konstantin; Ashjaee, Jalal; Young, Douglas W., Apparatus and method for loading a wafer in polishing system.
  5. Manoocher Birang ; Lawrence M. Rosenberg ; Sasson Somekh ; John M. White, Apparatus and methods for chemical mechanical polishing with an advanceable polishing sheet.
  6. Birang, Manoocher; Rosenberg, Lawrence M; Sandra L. Rosenberg,; Somekh, Sasson R; White, John M, Chemical mechanical polishing apparatus with rotating belt.
  7. Birang,Manoocher; Rosenberg, legal representative,Sandra L.; Somekh,Sasson; White,John M; Rosenberg, deceased,Lawrence M., Chemical mechanical polishing apparatus with rotating belt.
  8. Birang,Manoocher; Rosenberg,Lawrence M.; Somekh,Sasson; White,John M., Chemical mechanical polishing apparatus with rotating belt.
  9. Farrar,Paul A., Chemical mechanical polishing system and process.
  10. John M. White, Chemical mechanical polishing with a moving polishing sheet.
  11. Kovarsky,Nicolay; Yang,Michael; Lubomirsky,Dmitry, Contact plating apparatus.
  12. Herchen,Harald, Contact ring with embedded flexible contacts.
  13. Herchen,Harald; Lubomirsky,Dmitry; Zheng,Bo; Pang,Lily L., Electric field reducing thrust plate.
  14. Lee, Whonchee; Meikle, Scott, Electro-mechanically polished structure.
  15. Basol,Bulent M.; Talieh,Homayoun, Electrochemical mechanical processing apparatus.
  16. Burkhart,Vincent E.; Herchen,Harald; Yahalom,Joseph, Liquid isolation of contact rings.
  17. Lee,Whonchee; Meikle,Scott G., Method and apparatus for chemically, mechanically, and/or electrolytically removing material from microelectronic substrates.
  18. Duboust, Alain; Chang, Shou-Sung; Chen, Liang-Yuh; Wang, Yan; Neo, Siew; Sun, Lizhong; Liu, Feng Q., Method and apparatus for face-up substrate polishing.
  19. Lee,Whonchee; Meikle,Scott G.; Blalock,Guy, Method and apparatus for removing adjacent conductive and nonconductive materials of a microelectronic substrate.
  20. Chopra, Dinesh, Method and apparatus for simultaneously removing multiple conductive materials from microelectronic substrates.
  21. Mayer, Steven T.; Drewery, John S., Method and apparatus for uniform electropolishing of damascene IC structures by selective agitation.
  22. Lee, Whonchee; Meikle, Scott G.; Blalock, Guy T., Method for forming a microelectronic structure having a conductive material and a fill material with a hardness of 0.04 GPA or higher within an aperture.
  23. Mayer,Steven T.; Reid,Jonathan D.; Rea,Mark L.; Emesh,Ismail T.; Meinhold,Henner W.; Drewery,John S., Method for planar electroplating.
  24. Lee, Whonchee; Meikle, Scott G.; Blalock, Guy T., Method for removing metal layers formed outside an aperture of a BPSG layer utilizing multiple etching processes including electrochemical-mechanical polishing.
  25. Lee, Whonchee; Moore, Scott E.; Meikle, Scott G., Method for selectively removing conductive material from a microelectronic substrate.
  26. Chopra,Dinesh, Method for simultaneously removing multiple conductive materials from microelectronic substrates.
  27. Anderson, II, Robert L.; Charatan, Robert, Method of and platen for controlling removal rate characteristics in chemical mechanical planarization.
  28. Reid, Jonathan; Varadarajan, Sesha; Emekli, Ugur, Methods and apparatus for depositing copper on tungsten.
  29. Reid, Jonathan; Varadarajan, Sesha; Emekli, Ugur, Methods and apparatus for depositing copper on tungsten.
  30. Lee, Whonchee; Meikle, Scott G.; Moore, Scott E.; Doan, Trung T., Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate.
  31. Lee,Whonchee; Meikle,Scott G.; Moore,Scott E.; Doan,Trung T., Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate.
  32. Lee,Whonchee; Meikle,Scott G.; Moore,Scott E., Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate.
  33. Lee, Whonchee; Moore, Scott E.; Meikle, Scott G., Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium.
  34. Lee,Whonchee; Moore,Scott E.; Meikle,Scott G., Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium.
  35. Moore,Scott E.; Lee,Whonchee; Meikle,Scott G.; Doan,Trung T., Methods and apparatus for electrochemical-mechanical processing of microelectronic workpieces.
  36. Lee, Whonchee; Moore, Scott E.; Meikle, Scott G., Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate.
  37. Lee, Whonchee; Moore, Scott E.; Meikle, Scott G., Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate.
  38. Lee,Whonchee; Moore,Scott E.; Meikle,Scott G., Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate.
  39. Lee, Whonchee; Moore, Scott E.; Vaartstra, Brian A., Methods and apparatus for removing conductive material from a microelectronic substrate.
  40. Lee,Whonchee; Moore,Scott E.; Vaartstra,Brian A., Methods and apparatus for removing conductive material from a microelectronic substrate.
  41. Moore,Scott E., Methods and apparatus for removing conductive material from a microelectronic substrate.
  42. Lee, Whonchee; Moore, Scott E.; Meikle, Scott G., Methods and apparatus for selectively removing conductive material from a microelectronic substrate.
  43. Lee,Whonchee; Moore,Scott E.; Meikle,Scott G., Methods and apparatus for selectively removing conductive material from a microelectronic substrate.
  44. Lee, Whonchee, Methods and apparatuses for electrochemical-mechanical polishing.
  45. Lee, Whonchee, Methods and apparatuses for electrochemical-mechanical polishing.
  46. Lee,Whonchee, Methods and apparatuses for electrochemical-mechanical polishing.
  47. Lee, Whonchee; Sabde, Gundu M., Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media.
  48. Lee, Whonchee; Sabde, Gundu M., Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media.
  49. Owczarz, Alek; Boyd, John; Kistler, Rod, Methods using active retainer rings for improving edge performance in CMP applications.
  50. Lee,Whonchee; Meikle,Scott G.; Moore,Scott E., Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material.
  51. Mayer, Steven T.; Porter, David W., Modulated metal removal using localized wet etching.
  52. Saldana, Miguel A.; Owczarz, Aleksander A., Oscillating fixed abrasive CMP system and methods for implementing the same.
  53. White, John M.; Sommer, Phillip R.; Fisher, Stephen, Planarization system with multiple polishing pads.
  54. Owczarz, Alek; Boyd, John; Kistler, Rod, Platen design for improving edge performance in CMP applications.
  55. Kiermasz,Adrian; Saldana,Miguel A., Platen with diaphragm and method for optimizing wafer polishing.
  56. Kistler, Rod; Boyd, John; Owczarz, Alek, Pressurized membrane platen design for improving performance in CMP applications.
  57. Mayer, Steven T.; Drewery, John S.; Hill, Richard S.; Archer, Timothy M.; Kepten, Avishai, Selective electrochemical accelerator removal.
  58. Mayer, Steven T.; Drewery, John; Hill, Richard S.; Archer, Timothy; Kepten, Avishai, Selective electrochemical accelerator removal.
  59. Mayer, Steven T.; Stowell, Marshall R.; Drewery, John S.; Hill, Richard S.; Archer, Timothy M.; Kepten, Avishai, Selective electrochemical accelerator removal.
  60. Wu,Li; Mishra,Sourabh; Paik,Young J.; Kumaraswamy,Satyasrayan; Lum,Robert; Chan,Chiu; Groechel,David, System and method for chemical mechanical planarization.
  61. Basol, Bulent M.; Talieh, Homayoun, System and method for electrochemical mechanical polishing.
  62. Mayer, Steven T.; Rea, Mark L.; Hill, Richard S.; Kepten, Avishai; Stowell, R. Marshall; Webb, Eric G., Topography reduction and control by selective accelerator removal.
  63. Mayer, Steven T.; Rea, Mark L.; Hill, Richard S.; Kepten, Avishai; Stowell, R. Marshall; Webb, Eric G., Topography reduction and control by selective accelerator removal.
  64. Klein,Martin P.; Keigler,Arthur; Felsenthal,David, Ultra-thin wafer handling system.
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